IP Library Granted Patent US 8,120,982
Granted Patent B2
US 8,120,982 · App. 12/692,703 · Granted Feb 21, 2012

Semiconductor device, control method for semiconductor device, and electronic device

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Quick Facts
Patent No.
US 8,120,982
App. No.
12/692,703
Granted
Feb 21, 2012
Kind
B2
Abstract

A semiconductor device including a first switch coupled to a first power supply line, a second switch coupled to the first switch and to a second power supply line, and a storage part provided in a path which is between the second power supply line and the first switch, and having a high resistance state and a low resistance state, and wherein the first switch is turned on and the second switch is turned off when a resistance state of the storage part is in a high resistance state.

Claims (29)

1. A semiconductor device comprising:

a first switch coupled to a first power supply line;

a second switch coupled to the first switch and to a second power supply line; and

a storage part provided in a path which is between the second power supply line and the first switch, and having a high resistance state and a low resistance state, and

wherein the first switch is turned on and the second switch is turned off when a resistance state of the storage part is in a high resistance state.

2. The semiconductor device according to claim 1 ,

wherein the storage part is configured to hold information which is read from a node through which the second switch is coupled to the first switch, and the information corresponds to the high resistance state or the low resistance state.

3. The semiconductor device according to claim 1 ,

wherein the second switch complementarily operates with the first switch based on the resistance state of the storage part.

4. The semiconductor device according to claim 2 , comprising:

a buffer circuit coupled to the node, and

wherein the information is latched by the buffer circuit and the first switch.

5. The semiconductor device according to claim 4 ,

wherein the second switch is turned on from a timing at which the information starts to be read from the storage part to a timing based on a state of the node.

6. The semiconductor device according to claim 1 ,

wherein the first switch is turned on and the second switch is turned off before the information is read from the storage part.

7. The semiconductor device according to claim 6 , comprising:

a third switch coupled in parallel with the first switch,

wherein the third switch is turned on before the information is read from the storage part and is turned off after the information is read from the storage part.

8. A control method for a semiconductor device, comprising:

precharging a node from which information is read, the information that a storage part holds based on a change in a resistance value of the storage part;

reading the information from the node through a readout path provided between the storage part and the node; and

cutting off the readout path based on the level of the node after the reading.

9. An electronic device comprising:

a first switch coupled to a first power supply line;

a second switch coupled to the first switch through a node, the second switch is also coupled to a second power supply line;

a storage part provided in a path which is between the second power supply line and the node, and having a high resistance state and a low resistance state; and

a circuit operating based on information, and

wherein the first switch is turned on and the second switch is turned off when a resistance state of the storage part is in a high resistance state.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 27, 2015
From: FUJITSU SEMICONDUCTOR LIMITED
To: SOCIONEXT INC.
Reel/Frame 035508/0637 →
CHANGE OF NAME Recorded Sep 27, 2010
From: FUJITSU MICROELECTRONICS LIMITED
To: FUJITSU SEMICONDUCTOR LIMITED
Reel/Frame 025046/0478 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 5, 2010
From: TSUNETOU, KOUJI
To: FUJITSU MICROELECTRONICS LIMITED
Reel/Frame 023907/0025 →