Photosensor, photosensor apparatus including the photosensor, and display apparatus including the photosensor apparatus

1. A photosensor apparatus comprising a photosensor which is formed on a substrate, and at least one sensor signal processing thin film transistor (TFT) which processes a sensor signal received from the photosensor,

wherein the photosensor comprises a first light receiving layer which is formed on the substrate and comprises an oxide comprising oxygen (O) and gallium (Ga); a second light receiving layer which is connected to the first light receiving layer and comprises an organic material; and first and second electrodes which are respectively connected to the first and second light receiving layers, and

wherein an active layer of the at least one sensor signal processing TFT comprises the same oxide as the first light receiving layer of the photosensor.

2. The photosensor apparatus of claim 1 , wherein the first light receiving layer of the photosensor and the active layer of the at least one sensor signal processing TFT comprise oxygen (O) and at least one element selected from the group consisting of gallium (Ga), indium (In), zinc (Zn), and tin (Sn).

3. The photosensor apparatus of claim 1 , wherein the organic material comprises a phthalocyanine compound comprising at least one metal selected from the group consisting of copper (Cu), iron (Fe), nickel (Ni), cobalt (Co), manganese (Mn), aluminum (Al), palladium (Pd), tin (Sn), indium (In), lead (Pb), titanium (Ti), rubidium (Rb), vanadium (V), gallium (Ga), terbium (Tb), cerium (Ce), lanthanum (La), and (zinc) Zn.

4. The photosensor apparatus of claim 1 , wherein the organic material has a double-layered structure comprising a first layer comprising carbon-60 (C60) and a second layer comprising phthalocyanine compound comprising at least one metal selected from the group consisting of copper (Cu), iron (Fe), nickel (Ni), cobalt (Co), manganese (Mn), aluminum (Al), palladium (Pd), tin (Sn), indium (In), lead (Pb), titanium (Ti), rubidium (Rb), vanadium (V), gallium (Ga), terbium (Tb), cerium (Ce), lanthanum (La), and zinc (Zn).

5. The photosensor apparatus of claim 1 , wherein the organic material has a single-layered structure in which C60 and a phthalocyanine compound comprising at least one metal selected from the group consisting of cupper (Cu), iron (Fe), nickel (Ni), cobalt (Co), manganese (Mn), aluminum (Al), palladium (Pd), tin (Sn), indium (In), lead (Pb), titanium (Ti), rubidium (Rb), vanadium (V), gallium (Ga), terbium (Tb), cerium (Ce), lanthanum (La), and zinc (Zn), are mixed.

6. The photosensor apparatus of claim 1 , wherein the sensor signal processing TFT comprises a gate electrode, a gate insulating film, the active layer, and source and drain electrodes, which are sequentially stacked on the substrate,

wherein, in the photosensor, the first electrode, the first light receiving layer, the second light receiving layer, and the second electrode are sequentially stacked on the substrate,

wherein the first electrode and the gate electrode are substantially simultaneously formed by patterning the same material,

wherein the first light receiving layer and the active layer are substantially simultaneously formed, and

wherein the second electrode and the source and drain electrodes are substantially simultaneously formed by patterning the same material.

7. The photosensor apparatus of claim 1 , wherein the sensor signal processing TFT comprises a gate electrode, a gate insulating film, the active layer, and source and drain electrodes, which are sequentially stacked on the substrate,

wherein, in the photosensor, the first electrode, the second light receiving layer, the first light receiving layer, and the second electrode are sequentially stacked on the substrate,

wherein the first electrode and the gate electrode are substantially simultaneously formed by patterning the same material,

wherein the second light receiving layer and the active layer are substantially simultaneously formed, and

wherein the second electrode and the source and drain electrodes are substantially simultaneously formed by patterning the same material.

8. The photosensor apparatus of claim 1 , wherein the sensor signal processing TFT comprises source and drain electrodes, the active layer, a gate insulating film, and a gate electrode, which are sequentially stacked on the substrate,

wherein, in the photosensor, the first electrode, the first light receiving layer, the second light receiving layer, and the second electrode are sequentially stacked on the substrate,

wherein the first electrode and the source and drain electrodes are substantially simultaneously formed by patterning the same material,

wherein the first light receiving layer and the active layer are substantially simultaneously formed, and

wherein the second electrode and the gate electrode are substantially simultaneously formed by patterning the same material.

9. The photosensor apparatus of claim 1 , wherein the sensor signal processing TFT comprises source and drain electrodes, the active layer, a gate insulating film, and a gate electrode, which are sequentially stacked on the substrate,

wherein, in the photosensor, the first electrode, the second light receiving layer, the first light receiving layer, and the second electrode are sequentially stacked on the substrate,

wherein the first electrode and the source and drain electrodes are substantially simultaneously formed by patterning the same material,

wherein the second light receiving layer and the active layer are substantially simultaneously formed, and

wherein the second electrode and the gate electrode are substantially simultaneously formed by patterning the same material.

10. A display apparatus comprising a sensor unit configured to sense and process an optical signal, and a pixel unit which displays an image according to the optical signal processed by the sensor unit,

wherein the sensor unit comprises:

a photosensor comprising a first light receiving layer which is formed on a substrate and comprises an oxide comprising oxygen (O) and gallium (Ga); a second light receiving layer which is connected to the first light receiving layer and comprises an organic material; and first and second electrodes which are respectively connected to the first and second light receiving layers; and

a sensor signal processing thin film transistor (TFT) which processes a sensor signal received from the photosensor and comprises an active layer which comprises the same material as the first light receiving layer of the photosensor, and

wherein the pixel unit comprises:

a pixel unit TFT which drives a pixel according to the sensor signal processed by the sensor signal processing TFT and comprises an active layer which comprises the same material as the first light receiving layer of the photosensor; and

a plurality of pixels which are electrically connected to the pixel unit TFT and display the image.

11. The display apparatus of claim 10 , wherein the pixel unit comprises an organic light-emitting diode (OLED) which comprises at least an organic light-emitting layer between first and second electrodes.