Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus
View Patent ↗A Cl 2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl 2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.
1. A production method for a barrier film, comprising:
accommodating a substrate and a metallic etched member provided at a position opposed to the substrate into a chamber;
exhausting an inner atmosphere of the chamber;
supplying a source gas containing a halogen into the chamber and generating a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor derivated from a metal component contained in the etched member and the source gas;
supplying a gas containing nitrogen into the chamber and generating a nitrogen-containing gas plasma so that a metal nitride is formed upon reaction between nitrogen and the precursor;
maintaining the substrate at a predetermined temperature to deposit the metal nitride as a barrier film on a surface of the substrate; and then
supplying a rare gas to site above the surface of the substrate and generating a rare gas plasma, thereby nitrogen atoms in a superficial layer of the metal nitride film are removed by the rare gas plasma to decrease a nitrogen content of the superficial layer relative to an interior of a matrix of the metal nitride film.
2. The production method of claim 1 , further comprising:
supplying an oxygen gas into the chamber immediately before formation of the most superficial layer of the barrier metal film is completed; and
generating an oxygen gas plasma so that an oxide layer is formed on the most superficial layer of the barrier metal film.
3. The production method of claim 1 , further comprising:
supplying a hydrogen gas into the chamber;
generating a hydrogen gas plasma so that hydroxyl groups are formed on an oxide layer.
4. The production method of claim 1 , wherein the source gas containing the halogen is the source gas containing chlorine.
5. The production method of claim 1 , wherein the gas containing nitrogen is a gas containing ammonia.
6. The production method of claim 1 , wherein the etched member is made of tantalum, tungsten, titanium or silicon which is a halide-forming metal.
7. A production method for a film, comprising:
accommodating a substrate and a metallic etched member provided at a position opposed to the substrate into a chamber;
exhausting an inner atmosphere of the chamber;
supplying a source gas containing a halogen into the chamber and generating a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor derivated from a metal component contained in the etched member and the source gas;
supplying a gas containing nitrogen into the chamber and generating a nitrogen containing gas plasma so that a metal nitride is formed upon reaction between nitrogen and the precursor;
maintaining the substrate at a predetermined temperature to deposit the metal nitride as a barrier film on a surface of the substrate; and then
supplying a rare gas to a site above the surface of the substrate, generating a rare gas plasma, and exposing the rare gas plasma to a superficial layer of the metal nitride film.