Thin film transistor substrate and method of manufacturing the same
View Patent ↗A thin film transistor substrate with good process efficiency and a method of manufacturing the same are provided. The thin film transistor substrate includes a first conductive type MOS transistor and a second conductive type MOS transistor. The first conductive type MOS transistor includes a first semiconductor layer formed on a blocking layer and having first conductive type low-concentration doping regions adjacent to both sides of a channel region, first conductive type source/drain regions adjacent to the first conductive type low-concentration doping regions, a first gate insulating layer formed on the first semiconductor layer, a second gate insulating layer formed on the first gate insulating layer and overlapping with the channel region and the low-concentration doping regions of the first semiconductor layer, and a first gate electrode formed on the second gate insulating layer. The second conductive type MOS transistor includes a second semiconductor layer formed on the blocking layer and having second conductive type source/drain regions adjacent to both sides of a channel region, the first gate insulating layer formed on the second semiconductor layer, a third gate insulating layer formed on the first gate insulating layer and overlapping with the second semiconductor layer, and a second gate electrode formed on the third gate insulating layer.
1. A thin film transistor substrate, comprising:
a first conductive type MOS transistor including:
a first semiconductor layer formed on a blocking layer and having first conductive type low-concentration doping regions adjacent to both sides of a channel region,
first conductive type source/drain regions adjacent to the first conductive type low-concentration doping regions,
a first gate insulating layer formed on the first semiconductor layer,
a first portion of a second gate insulating layer formed on the first gate insulating layer and overlapping only with the channel region and the low-concentration doping regions of the first semiconductor layer, and
a first gate electrode formed on the second gate insulating layer; and
a second conductive type MOS transistor including:
a second semiconductor layer formed on the blocking layer and having second conductive type source/drain regions adjacent to both sides of a channel region,
the first gate insulating layer formed on the second semiconductor layer,
a second portion of the second gate insulating layer formed on the first gate insulating layer and overlapping with the second conductive type source/drain regions of the second semiconductor layer, and
a second gate electrode formed on the second gate insulating layer.
2. The thin film transistor substrate of claim 1 , wherein the thickness of the second gate insulating layer is equal to or greater than the thickness of the first gate insulating layer.
3. The thin film transistor substrate of claim 1 , further comprising a second conductive type doping impurity under the first conductive type source/drain regions in the first semiconductor layer of the first conductive type MOS transistor.
4. The thin film transistor substrate of claim 1 , wherein the first conductive type is n-type and the second conductive type is p-type.
5. The thin film transistor substrate of claim 1 , wherein the first gate insulating layer comprises a silicon oxide film.
6. The thin film transistor substrate of claim 1 , wherein the second gate insulating layer comprises a silicon nitride film.
7. The thin film transistor substrate of claim 1 , wherein the second portion of the second gate insulating layer overlaps only with the second conductive type source/drain regions and channel region of the second semiconductor layer.
8. The thin film transistor substrate of claim 1 , further comprising:
an inter-insulating layer formed on the first gate insulating layer, the second gate insulating layer, the first gate electrode and the second gate electrode;
a first contact hole in the inter-insulating layer exposing a portion of the first conductive type drain region;
a second contact hole in the inter-insulating layer exposing a portion of the second conductive type source region; and
an electrode layer formed on the inter-insulating layer, an exposed portion of the first conductive type drain region and an exposed portion of the second conductive type source region.