Thin-film transistor and display device
View Patent ↗A thin-film transistor includes: a gate electrode formed on a substrate; an oxide semiconductor layer forming a channel region corresponding to the gate electrode; a first gate insulating film formed on the substrate and the gate electrode, and including a silicon nitride film; a second gate insulating film selectively formed to contact with the oxide semiconductor layer in a region, on the first gate insulating film, corresponding to the oxide semiconductor layer, and including one of a silicon oxide film and a silicon oxynitride film; a source/drain electrode; and a protecting film. An upper surface and a side surface of the oxide semiconductor layer and a side surface of the second gate insulating film are covered, on the first gate insulating film, by the source/drain electrode and the protecting film.
1. A thin-film transistor, comprising:
a gate electrode formed on a substrate;
an oxide semiconductor layer forming a channel region corresponding to the gate electrode;
a first gate insulating film formed on the substrate and the gate electrode, and including a silicon nitride film;
a second gate insulating film selectively formed to contact with the oxide semiconductor layer in a region, on the first gate insulating film, corresponding to the oxide semiconductor layer, and including one of a silicon oxide film and a silicon oxynitride film;
a source/drain electrode; and
a protecting film,
wherein an upper surface and a side surface of the oxide semiconductor layer and a side surface of the second gate insulating film are covered, on the first gate insulating film, by the source/drain electrode and the protecting film.
2. The thin-film transistor according to claim 1 , wherein the protecting film includes one of aluminum oxide and silicon nitride.
3. The thin-film transistor according to claim 2 , wherein the protecting film includes a stacked film having at least one layer of one of an aluminum oxide film and a silicon nitride film.
4. The thin-film transistor according to claim 1 , wherein the protecting film includes a channel protecting film provided at least in a region corresponding to the channel region.
5. The thin-film transistor according to claim 1 , wherein the protecting film includes a passivation film formed to cover an entire outermost surface of the thin-film transistor.
6. The thin-film transistor according to claim 1 , wherein
the source/drain electrode includes a stacked configuration having a plurality of metal layers, and
a metal layer, which is in contact with the oxide semiconductor layer, of the plurality of metal layers includes a metal material containing oxygen.
7. The thin-film transistor according to claim 1 , wherein
the source/drain electrode includes a stacked configuration having a plurality of metal layers, and
a metal layer, which is in contact with the oxide semiconductor layer, of the plurality of metal layers includes molybdenum.
8. A display device, comprising
a display element, and
a thin-film transistor driving the display element, the thin-film transistor including:
a gate electrode formed on a substrate;
an oxide semiconductor layer forming a channel region corresponding to the gate electrode;
a first gate insulating film formed on the substrate and the gate electrode, and having a silicon nitride film;
a second gate insulating film selectively formed to contact with the oxide semiconductor layer in a region, on the first gate insulating film, corresponding to the oxide semiconductor layer, and having one of a silicon oxide film and a silicon oxynitride film;
a source/drain electrode; and
a protecting film,
wherein an upper surface and a side surface of the oxide semiconductor layer and a side surface of the second gate insulating film are covered, on the first gate insulating film, by the source/drain electrode and the protecting film.
9. The display device according to claim 8 , wherein the display element includes an organic light-emitting element having an anode, an organic layer including a light-emitting layer, and a cathode.