Metal substrate having electronic devices formed thereon
View Patent ↗A method of forming an electronic device on a metal substrate deposits a first seed layer of a first metal on at least one master surface with a roughness less than 400 nm. A supporting metal layer is bonded to the first seed layer to form the metal substrate 10 . The metal substrate is removed from the master surface, and at least one electronic device is formed on the seed layer of the metal substrate.
1. A method of forming a semiconductor device on a metal substrate comprising:
providing a master having a master surface with a roughness of less than 400 nm, peak-to-peak;
depositing a first seed layer of a first metal on the master surface of the master to form a substantially planar surface of the first seed layer proximate the master surface;
bonding a supporting metal layer to the first seed layer on a surface opposite the substantially planar surface, the seed layer and the metal layer comprising the metal substrate;
removing the metal substrate from the master to expose the substantially planar surface;
laminating the metal substrate to a carrier with the supporting metal layer against the carrier;
forming at least one semiconductor device on the exposed substantially planar surface, opposite the supporting metal layer; and
removing the metal substrate having at least one semiconductor device from the carrier.
2. The method of claim 1 wherein removing the metal substrate comprises applying heat.
3. The method of claim 1 , wherein the master surface has a roughness of less than 200 nm, peak-to-peak.
4. The method as in claim 1 wherein the first metal is chrome.
5. The method as in claim 1 further comprising depositing a second seed layer of a second metal on the first seed layer.
6. The method of claim 1 wherein said semiconductor device comprises one or more thin film transistors.
7. The method as in claim 1 wherein said supporting metal layer is a nickel sulfate or a nickel compound.
8. The method as in claim 1 wherein said supporting metal layer is bonded by electroplating.
9. The method as in claim 1 wherein said supporting metal layer is bonded by plasma deposition.
10. The method as in claim 1 wherein said supporting metal layer is stainless steel.
11. The method as in claim 1 wherein removing said metal substrate comprises applying heat.
12. The method of claim 1 wherein the step of forming at least one semiconductor device further comprises spin coating a thin-film semiconductor material onto the exposed substantially planar surface.
13. The method of claim 1 further comprising depositing a dielectric material onto the exposed substantially planar surface prior to forming said at least one semiconductor device.
14. The method of claim 1 further comprising attaching the substrate with said at least one semiconductor device onto another device.
15. The method of claim 1 further comprising attaching the substrate with said at least one semiconductor device onto a rigid support.
16. The method of claim 1 further comprising coupling the semiconductor with a liquid crystal pixel.
17. The method of claim 1 further comprising coupling the semiconductor device with a light-emitting diode pixel.
18. The method of claim 1 further comprising coupling the semiconductor device with an organic light-emitting diode pixel.
19. The method of claim 1 further comprising coupling the semiconductor device with a stimulatable phosphor pixel.
20. The method of claim 1 further comprising coupling the semiconductor device with a sensor pixel.