Light-emitting element
View Patent ↗According to an aspect of the invention, a light-emitting element includes a shift thyristor, a light emitting thyristor, and a vertical type gate load resistor. The shift thyristor includes a first anode layer, a first gate layer, and a first cathode layer. The light-emitting thyristor includes a second anode layer, a second gate layer, and a second cathode layer. The vertical type gate load resistor is arranged on the first gate layer under a power line and limits a current flowing from the first gate layer and the second gate layer to the power line.
1. A light-emitting element comprising:
a shift thyristor that includes a first anode layer, a first gate layer, and a first cathode layer and that is turned ON and OFF in accordance with a potential of the first gate layer in a state that a voltage is applied between the first anode layer and the first cathode layer;
a light-emitting thyristor that includes a second anode layer, a second gate layer, and a second cathode layer and that is turned ON in response to the potential of the second gate layer when the shift thyristor becomes ON, the second gate layer and the first gate layer being composed of a single layer, one of the second anode layer and the second cathode layer being provided as a common layer to the first anode layer or the first cathode layer, the other one of the second anode layer and the second cathode layer being provided as a layer separate from the first anode layer and the first cathode layer; and
a gate load resistor that is arranged on the first gate layer under a power line and that limits a current flowing from the first gate layer and the second gate layer to the power line, the gate load resistor including a Schottky diode generated by arranging a Schottky electrode between the first gate layer and the power line,
the Schottky electrode being in contact with the first and second gate layers.
2. The light-emitting element according to claim 1 , wherein the gate load resistor includes a thin film resistor provided between the first gate layer and the power line.
3. The light-emitting element according to claim 2 , wherein the thin film resistor extends along a direction crossing the first gate layer.
4. The light-emitting element according to claim 1 , wherein a portion of the first gate layer between the Schottky electrode and the light-emitting thyristor is removed so that a path extending from the Schottky electrode to the first gate layer forms an elongated contact part between the Schottky electrode and the light-emitting thyristor.