Methods of manufacturing active matrix substrate and organic light-emitting display device

1. A method of manufacturing an active matrix substrate, the method comprising:

forming a first electrode having a first pattern on a substrate;

forming a first insulating film to cover the first electrode on the substrate;

attaching a first layer on a surface of a semiconductor wafer to the first insulating film by placing the semiconductor wafer on the first insulating film;

transferring the first layer onto the first insulating film to form a semiconductor layer on the first insulating film by electrolysis method;

doping a portion of the semiconductor layer with a dopant and patterning the semiconductor layer to form an active layer;

forming a second insulating film to cover the active layer on the first insulating film; and

forming a second electrode coupled to the doped region of the active layer on the second insulating film.

2. The method of claim 1 , wherein the attaching of the first layer on the surface of the semiconductor wafer to the first insulating film comprises:

forming the first layer on the surface of the semiconductor wafer;

heating the semiconductor wafer with a first temperature and the first insulating film with a second temperature different from the first temperature;

bringing the first layer on the surface of the semiconductor wafer into contact with the first insulating film;

applying a voltage between the semiconductor wafer and the first insulating film; and

peeling a portion of the semiconductor wafer from the first insulating film such that the first layer remains attached to the first insulating film.

3. The method of claim 2 , wherein the forming of the first layer on the surface of the semiconductor wafer comprises ion implanting a gas comprising hydrogen ions into a surface of the semiconductor wafer.

4. The method of claim 1 , wherein the semiconductor wafer comprises mono-crystalline silicon.

5. The method of claim 1 , wherein the doping of the portion of the semiconductor layer with the dopant and patterning of the semiconductor layer to form the active layer comprises:

forming a first resist layer on the semiconductor layer to cover a first portion of the semiconductor layer and to expose a first region of the semiconductor layer through an opening in the first resist layer;

doping the first region of the semiconductor layer with a dopant through the opening in the first resist layer;

removing the first resist layer; and

patterning the semiconductor layer into a second pattern to form the active layer.

6. The method of claim 5 , wherein a pattern of the opening in the first resist layer is substantially identical to a pattern in which portions other than portions of the first resist layer corresponding to the first pattern of the first electrode are etched.

7. The method of claim 6 , wherein the forming of the first resist layer comprises:

exposing the first resist layer to light from a lower side of the substrate in accordance with the pattern of the first electrode; and

etching the first resist layer so as to maintain portions of the first resist layer substantially corresponding in position to the first pattern of the first electrode.

8. The method of claim 5 , wherein the patterning of the semiconductor layer into the second pattern is performed prior to the forming of the first resist layer.

9. A method of manufacturing an organic light emitting display device, the method comprising:

forming a first gate electrode and a second gate electrode on a substrate;

forming a first insulating film to cover the first and second gate electrodes on the substrate;

attaching a first layer on a surface of a semiconductor wafer to the first insulating film by placing the semiconductor wafer on the first insulating film;

transferring the first layer onto the first insulating film to form a semiconductor layer on the first insulating film by electrolysis method;

doping the first and second regions of the semiconductor layer and patterning the semiconductor layer to form a first active layer having a first region and a second active layer having a second region, wherein at least the first region and the second region are doped with a same type of dopant;

forming a second insulating film to cover the first and second active layers on the first insulating film;

forming holes in the second insulating film to expose the first and second regions of the semiconductor layer;

forming a second electrode coupled to the first region and the second region and forming a pixel electrode coupled to the second region on the second insulating film;

forming a third insulating film to cover the second electrode and the pixel electrode on the second insulating film;

forming an opening in the third insulating film to expose at least one portion of the pixel electrode;

forming an organic film comprising a light emitting layer on the at least one portion of the pixel electrode exposed through the opening in the third insulating film; and

forming a facing electrode to cover the organic film.

10. The method of claim 9 , wherein the attaching of the first layer on the surface of the semiconductor wafer to the first insulating film comprises:

forming the first layer on the surface of the semiconductor wafer;

heating the semiconductor wafer with a first temperature and the first insulating film with a second temperature different from the first temperature;

bringing the first layer on the surface of the semiconductor wafer into contact with the first insulating film;

applying a voltage between the semiconductor wafer and the first insulating film; and

peeling a portion of the semiconductor wafer from the first insulating film such that the first layer remains attached to the first insulating film.

11. The method of claim 10 , wherein the forming of the first layer comprises ion implanting a gas comprising hydrogen ions into a surface of the semiconductor wafer.

12. The method of claim 9 , wherein the semiconductor wafer comprises mono-crystalline silicon.

13. The method of claim 9 , wherein the forming of the first and second active layers comprises:

forming a first resist layer on the semiconductor layer to cover the semiconductor layer and having an opening to expose the first region and the second region of the semiconductor layer;

doping the first region and the second region of the semiconductor layer with a dopant through the opening of the first resist layer;

removing the first resist layer; and

patterning the semiconductor layer into a second pattern to form the first and second active layers.

14. The method of claim 13 , wherein the pattern of the opening in the first resist layer is substantially identical to a pattern in which portions other than portions of the first resist layer corresponding to the pattern of the first electrode are etched.

15. The method of claim 14 , wherein the forming of the first resist layer comprises:

exposing the first resist layer to light from a lower side of the substrate in accordance with a pattern of the first gate electrode and the second gate electrode; and

etching the first resist layer so as to maintain portions of the first resist layer to substantially correspond in position to the pattern of first gate electrode and the second gate electrode.

16. The method of claim 13 , wherein the patterning of the semiconductor layer into the second pattern is performed prior to the forming of the first resist layer.