Display unit with thin film transistor having through holes in source/drain electrode
View Patent ↗A thin film transistor with which oxygen is easily supplied to an oxide semiconductor layer and favorable transistor characteristics are able to be restored and a display unit including the same are provided. The thin film transistor includes sequentially over a substrate a gate electrode, a gate insulting film, an oxide semiconductor layer including a channel region, and a channel protective layer covering the channel region A source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, and at least one of the source electrode and the drain electrode has an aperture to expose the oxide semiconductor layer.
1. A thin film transistor comprising sequentially over a substrate:
a gate electrode;
a gate insulting film;
an oxide semiconductor layer including a channel region;
a channel protective layer covering the channel region, and
a source electrode and a drain electrode that are formed on the oxide semiconductor layer located on both sides of the channel protective layer,
wherein,
at least one of the source electrode and the drain electrode has an aperture that is formed in the electrode itself and penetrates to the oxide semiconductor layer.
2. The thin film transistor according to claim 1 , wherein:
the source electrode and the drain electrode each include a metal layer containing aluminum, copper, silver, or molybdenum as a main component, and
the source electrode and the drain electrode are each made of a single layer film of the metal layer, or are each made of a laminated film composed of the metal layer and a metal layer or metal compound layer containing titanium, vanadium, niobium, tantalum, chromium, tungsten, nickel, zinc, or indium as a main component.
3. The thin film transistor according to claim 1 , wherein each of the source electrode and the drain electrode includes a layer composed of a metal that does not make oxygen detached from the oxide semiconductor layer or composed of a metal compound that does not make oxygen detached from the oxide semiconductor layer, the layer being in contact with the oxide semiconductor layer.
4. The thin film transistor according to claim 3 , wherein the layer is composed of (i) molybdenum, (ii) an oxide, a nitride, or a nitroxide of molybdenum, (iii) an oxide, a nitride, or a nitroxide of titanium, (iv) an aluminum nitride, or (v) a copper oxide.
5. The thin film transistor according to claim 1 , wherein each of the source electrode and the drain electrode is made of a plurality of layers including an uppermost layer composed of (i) titanium, or (ii) an oxide, a nitride, or a nitroxide of titanium.
6. The thin film transistor according to claim 1 , wherein each of the source electrode and the drain electrode includes a layer composed of (i) a conductive metal oxide, (ii) a conductive metal nitride, or (iii) a conductive metal nitroxide, the layer being in contact with the oxide semiconductor layer.
7. A display unit comprising:
a thin film transistor; and
a display device, wherein the thin film transistor includes sequentially over a substrate:
a gate electrode,
a gate insulting film,
an oxide semiconductor layer including a channel region,
a channel protective layer covering the channel region, and
a source electrode and a drain electrode that are formed on the oxide semiconductor layer located on both sides of the channel protective layer,
wherein,
at least one of the source electrode and the drain electrode has an aperture that is formed in the electrode itself and penetrates to the oxide semiconductor layer.
8. The display unit according to claim 7 , wherein the display device is an organic light emitting device having an organic layer including a light emitting layer between an anode and a cathode.