Open-drain output buffer for single-voltage-supply CMOS
View Patent ↗An open-drain output buffer is operative to sustain relatively high voltages applied to an output pad. The open-drain buffer includes a number of floating wells, output switching devices and corresponding well-bias selectors to ensure that no gate oxide sustains voltages greater than a predefined value. PMOS and NMOS well-bias selectors operate to select and provide an available highest or lowest voltage, respectively, to bias corresponding well-regions and ensure no device switching terminals are electrically over stressed. As output related terminals experience switching related voltage excursions, the well-bias selectors select alternate terminals to continue selection of the respective highest or lowest voltages available and provide correct well-biasing conditions. Voltage dividers are incorporated to generate well-biasing control voltages. By electrical coupling across maximal voltages, the voltage dividers generate reference voltages that induce proper selection of well-bias voltages to the floating wells.
1. An output buffer disposed between a supply voltage terminal and a ground terminal, the output buffer comprising:
a plurality of transistors coupled to an output pad and configured to electrically couple the output pad to the ground terminal;
a plurality of well-bias selectors each coupled to an associated one of a plurality of floating wells, the plurality of well-bias selectors configured to select and provide a respective reverse well-bias voltage to the associated one of the plurality of floating wells; and
a plurality of voltage dividers each coupled to an associated one of the plurality of well-bias selectors and configured to generate a respective well-bias-reference voltage;
wherein the plurality of transistors comprises a first transistor, a second transistor, and a third transistor, the first, second, and third transistors being coupled in series.
2. The output buffer of claim 1 , wherein the first transistor has a first current carrying terminal coupled to the output pad, a gate terminal coupled to a first node, a second current carrying terminal coupled to a second node, and a body terminal coupled to a first floating well, wherein the second transistor has a first current carrying terminal coupled to the second node, and a gate terminal coupled to the supply voltage, wherein the third transistor has a first current terminal coupled to the second current carrying terminal of the second transistor, a second current carrying terminal coupled to the ground terminal, and a gate terminal receiving an input voltage, wherein body terminals of the second transistor and the third transistor are coupled to the ground terminal.
3. The output buffer of claim 2 , wherein the first, second and third transistors are NMOS transistors.
4. The output buffer of claim 3 wherein each of the plurality of well-bias selectors further comprises a first transistor and a second transistor, wherein a gate terminal of the first transistor of a well-bias selector is coupled to a first current carrying terminal of the second transistor of the well-bias selector, wherein a gate terminal of the second transistor of the well-bias selector is coupled to a first current carrying terminal of the first transistor of the well-bias selector, wherein a body terminal of the first transistor of the well-bias selector is coupled to a body terminal of the second transistor of the well-bias selector, to a corresponding floating well and to second current carrying terminals of the first transistor and the second transistor of the well-bias selector.
5. The output buffer of claim 4 , wherein the first and the second transistors disposed in at least one of the well-bias selectors are native PMOS transistors and the corresponding floating well is a semiconductor region having n-type dopants.
6. The output buffer of claim 5 , wherein the first and the second transistors disposed in at least one of the well-bias selectors are NMOS transistors and the corresponding floating well is a semiconductor region having p-type dopants.
7. The output buffer of claim 6 wherein a first one of the plurality of well-bias selectors is coupled between the output pad and the gate terminal of the first transistor of the output buffer, and wherein a second one of the plurality of well-bias selectors is coupled between the gate terminals of the first and second transistors of the output buffer.
8. The output buffer of claim 7 wherein a first voltage divider is coupled between the supply voltage terminal and the ground terminal, wherein said first voltage divider comprises a first transistor and a second transistor, wherein gate and drain terminals of the first transistor of the first voltage divider are coupled to the supply voltage terminal, wherein a source terminal of the first transistor of the first voltage divider and gate and drain terminals of the second transistor of the first voltage divider are coupled to an output terminal of the first voltage divider, and wherein body terminals of the first transistor and a second transistor of the first voltage divider are coupled to the ground terminal.
9. The output buffer of claim 8 , wherein the first and the second transistors disposed in the first voltage divider are NMOS transistors.
10. The output buffer of claim 9 , wherein the second transistor disposed in the first voltage divider is a native NMOS transistor.
11. The output buffer of claim 10 , wherein a second voltage divider is coupled between the supply voltage terminal and the output pad, wherein the second voltage divider comprises a first transistor and a second transistor, wherein a gate terminal of the first transistor of the second voltage divider is coupled to the output terminal of the first voltage divider and a first current carrying terminal of the first transistor is coupled to the supply voltage terminal, wherein a drain terminal of the first transistor of the second voltage divider and a gate and drain terminals of the second transistor of the second voltage divider are coupled to an output terminal of the second voltage divider, wherein a source terminal of the second transistor of the second voltage divider is coupled to the output pad, wherein a body terminal of the first transistor of the second voltage divider is coupled to a second floating well, and wherein the body terminal of the second transistor of the second voltage divider is coupled to the first floating well.
12. The output buffer of claim 11 , wherein the first and the second transistors disposed in the second voltage divider are native PMOS transistors.
13. The output buffer of claim 12 further comprising a PMOS transistor having gate and source terminals coupled to the first node and a drain terminal coupled to the supply voltage.