Semiconductor device

1. A semiconductor device comprising:

a semiconductor substrate on which an internal circuit is formed in a central position;

an insulating layer formed over the semiconductor substrate; and

a moisture-resistant ring formed by a metal plug embedded in the insulating layer, the moisture-resistant ring surrounding the internal circuit, the moisture-resistant ring extending over the semiconductor substrate in a shape, the moisture-resistant ring including:

a first extending portion linearly extending in the insulating layer and in a first direction in parallel to the surface of the semiconductor substrate;

a vertical portion connected to the first extending portion extending in the insulating layer and in a second direction orthogonal to the first extending portion and in parallel to the surface of the semiconductor substrate; and

a second extending portion linearly extending in the insulating layer and orthogonal to the vertical portion and in parallel to the surface of the semiconductor substrate, the second extending portion spaced apart from the first extending portion, the second extending portion crossing the vertical portion.

2. The semiconductor device according to claim 1 , wherein the vertical portion and the second extending portion have a same width.

3. The semiconductor device according to claim 1 , wherein the first extending portion and the vertical portion are respectively spaced apart, and the first extending portion and the vertical portion are connected by a joint portion, the joint portion including a first connecting portion vertically bending with respect to the first extending portion and parallel to the surface of the semiconductor substrate, and a second connecting portion vertically bending with respect to the first connecting portion and parallel to the surface of the semiconductor substrate, the second connecting portion connecting the vertical portion.

4. The semiconductor device according to claim 1 , wherein the first extending portion and the vertical portion are respectively spaced apart, and the first extending portion and the vertical portion are connected by a joint portion, the joint portion forming a shape of a closed loop in cooperation with the vertical portion.

5. The semiconductor device according to claim 1 , wherein the first extending portion and the vertical portion are respectively spaced apart, and the first extending portion and the vertical portion are connected by a joint portion, the joint portion including a plurality of connecting portion formed in a linear shape and parallel to the surface of the semiconductor substrate, the respective connecting portions connect forming a first obtuse angle by end portion of the respective connecting portions, the connecting portion connecting the first extending portion connects the first extending portion forming a second obtuse angle by end portion of the connecting portion and the first extending portion, and the connecting portion connecting the vertical portion connects the vertical portion forming a third obtuse angle by end portion of the connecting portion and the vertical portion.

6. The semiconductor device according to claim 1 , wherein the vertical portion and the second extending portion are formed by the metal plug.

7. The semiconductor device according to claim 2 , wherein the plug portion includes a second vertical portion having the same length with the vertical portion and parallel to the surface of the semiconductor substrate, the second vertical portion being opposed to the vertical portion, the second vertical portion spaced apart from the vertical portion, the second vertical portion connecting to the first extending portion, and a pair of connecting portions connecting each opposing end portion of the vertical portion and the second vertical portion and parallel to the surface of the semiconductor substrate.

8. The semiconductor device according to claim 3 , further comprising:

a plurality of the insulating layers; and

a wiring layer formed between the respective insulating layers; and

wherein the moisture-resistant ring includes a plug portion formed in the insulating layer, and a wiring portion formed in the wiring layer and parallel to the surface of the semiconductor substrate, the wiring portion connecting the plug portion adjacent to the wiring portion, and the first extending portion, the vertical portion and the second extending portion are formed in the same insulating layer.

9. The semiconductor device according to claim 7 , wherein the first extending portion is spaced apart from the second vertical portion.

10. The semiconductor device according to claim 8 , wherein the wiring portion formed in the insulating layer adjacent to the insulating layer is formed over the first extending portion, the vertical portion and the second extending portion.

11. The semiconductor device according to claim 8 , wherein the wiring portion over the vertical portion and the joint portion has the width greater than that of all the rest of the wiring portion.

12. The semiconductor device according to claim 8 , wherein the first extending portion includes a first wide potion having a first width and a first narrow portion having a second width narrower than the first width, the second extending portion includes a second wide pattern having a third width and a second narrow portion having a fourth width narrower than the third width, and the first narrow portion of the first extending portion is orthogonal to the second narrow portion of the second extending portion.

13. The semiconductor device according to claim 10 , wherein the first extending portion, the vertical portion, the joint portion and the second extending portion have the depth and the width as the same as the plug portion formed in the same insulating layer of the internal circuit.

14. The semiconductor device according to claim 12 , wherein the first extending portion includes a first drawdown portion having a fifth width narrower than the second width, the second extending portion includes a second drawdown portion having a sixth width narrower than the fourth width, and the first drawdown portion of the first extending portion is orthogonal to the second drawdown portion of the second extending portion.

15. A method of manufacturing a semiconductor device by exposing a mask layer over a semiconductor substrate by using a first mask and a second mask, the mask layer for forming a via pattern in a groove shape of a moisture-resistant ring, the first mask including a first extending portion pattern linearly extending in a first direction and a vertical portion pattern orthogonal to the first direction, and the second mask including a second extending portion pattern linearly extending in the first direction, the method comprising:

exposing a first via pattern on the mask layer by using one of the first or second masks so that a part of the groove shape of the moisture-resistant ring is formed on the mask layer; and

exposing a second via pattern on the mask layer by using the other one of the first or second masks so that all of the groove shape of the moisture-resistant ring is formed on the mask layer;

wherein the exposing the first and second via pattern on the mask layer is performed by forming a first portion exposed by the vertical portion pattern and a second portion exposed by the second extending portion pattern orthogonal, and forming a third portion exposed by the first extending portion pattern and the second portion of the second extending portion pattern spaced apart, the third portion connecting to the first portion; and

the moisture-resistant ring includes:

a first extending portion linearly extending in an insulating layer formed over the semiconductor substrate and in a first direction in parallel to the surface of the semiconductor substrate;

a vertical portion connected to the first extending portion extending in the insulating layer and in a second direction orthogonal to the first extending portion and in parallel to the surface of the semiconductor substrate; and

a second extending portion linearly extending in the insulating layer and orthogonal to the vertical portion and in parallel to the surface of the semiconductor substrate, the second extending portion spaced apart from the first extending portion, the second extending portion crossing the vertical portion.

16. The method according to claim 15 , further comprising forming the vertical portion pattern of the first mask and the second extending pattern of the second mask having the same width respectively.

17. The method according to claim 15 , further comprising:

forming the width of the vertical portion pattern of the first mask smaller than the width of the first extending portion pattern;

forming the second extending portion pattern having a wide portion and a narrow portion, the wide portion having the same width as the first extending portion pattern, and the narrow portion having narrower width than the first extending portion pattern; and

exposing the mask layer such that the vertical portion pattern orthogonal to the narrow portion of the second extending portion pattern.

18. The method according to claim 15 , further comprising:

forming the width of the vertical portion pattern of the first mask smaller than the width of the first extending portion pattern;

forming the second extending portion pattern having a second wide portion and a second narrow portion, the second wide portion having the same width as the first extending portion pattern, and the second narrow portion having narrower width than the first extending portion pattern; and

exposing the mask layer such that the first narrow portion of the vertical portion pattern orthogonal to the second narrow portion of the second extending portion pattern.

19. The method according to claim 16 , wherein the exposing the first via pattern on the mask layer by using one of the first or second masks so that the part of the groove shape of the moisture-resistant ring is formed on the mask layer and the exposing the second via pattern on the mask layer by using the other one of the first or second masks so that all of the groove shape of the moisture-resistant ring is formed on the mask layer is performed by forming a amount of the distance spaced apart between first portion exposed by the first extending portion pattern with respect to the first mask and second portion exposed by the second extending portion pattern with respect to the second mask being greater than a sum of a first displacement and a second displacement, the first displacement of the position exposed by the first extending portion pattern with respect to the original position where the first extending portion pattern may be exposed and the second displacement of the position exposed by the second extending portion pattern with respect to the original position where the second extending portion pattern may be exposed.

20. The method according to claim 19 , further comprising forming the first extending portion pattern of the first mask and the second extending portion pattern of the second mask having the same width respectively; and

wherein the forming the amount of the distance spaced apart between first portion exposed by the first extending portion pattern with respect to the first mask and second portion exposed by the second extending portion pattern with respect to the second mask is performed by forming the amount of the distance being greater than the sum of the first displacement, the second displacement and the width of the first extending portion pattern or the second extending portion pattern.

21. A method of manufacturing a semiconductor device by exposing a mask layer over a semiconductor substrate by using a mask, the mask layer for forming a via pattern in a groove shape of a moisture-resistant ring, the mask including a first extending portion pattern linearly extending in a first direction, a vertical portion pattern orthogonal to the first direction, the first extending portion pattern and the vertical portion pattern formed on one side of the mask, and a second extending portion pattern extending parallel to the first direction, the second extending portion pattern formed on the other side of the mask, the method comprising:

exposing a first extending portion pattern, a vertical portion pattern and a second extending portion pattern on a first area of the mask layer;

arranging the mask over the mask layer from the first area to a second area, the second area adjacent to the first area;

exposing a first extending portion pattern, a vertical portion pattern and a second extending portion pattern on the second area of the mask layer such that the vertical portion pattern exposed on the first area is orthogonal to the second extending portion pattern exposed on the second area, and the vertical portion pattern is connected to the first extending portion pattern; and

the moisture-resistant ring includes:

a first extending portion linearly extending in an insulating layer formed over the semiconductor substrate and in a first direction in parallel to the surface of the semiconductor substrate;

a vertical portion connected to the first extending portion extending in the insulating layer and in a second direction orthogonal to the first extending portion and in parallel to the surface of the semiconductor substrate; and

a second extending portion linearly extending in the insulating layer and orthogonal to the vertical portion and in parallel to the surface of the semiconductor substrate, the second extending portion spaced apart from the first extending portion, the second extending portion crossing the vertical portion.