Organic light emitting diode display

1. An organic light emitting diode display comprising:

a substrate having organic light emitting diodes thereon;

a thin film encapsulation layer formed on the substrate such that the thin film encapsulation layer covers the organic light emitting diodes; and

a nonorganic layer formed under the thin film encapsulation layer and along the edge of the thin film encapsulation layer, wherein the entire surface of the nonorganic layer facing the thin film encapsulation layer directly contacts the thin film encapsulation layer,

wherein the nonorganic layer covers only a region of the substrate without the organic light emitting diodes thereon, wherein the substrate comprises a display area with the organic light emitting diodes, wherein the nonorganic layer is placed external to and surrounds the display area, and wherein the nonorganic layer is formed on the same plane as any one of a plurality of layers constructing the display area with the same material.

2. The organic light emitting diode display of claim 1 further comprising a pixel definition layer placed external to the display area, wherein the nonorganic layer is formed on the pixel definition layer.

3. The organic light emitting diode display of claim 1 , wherein the nonorganic layer comprises a layer selected from the group consisting of a metallic layer and an inorganic nonmetallic layer.

4. The organic light emitting diode display of claim 3 , wherein the nonorganic layer comprises a material selected from the group consisting of Al, Cu, Mo, Ti, ITO, silicon oxide, silicon nitride, aluminum oxide, and silicon oxynitride.

5. The organic light emitting diode display of claim 1 further comprising an inorganic passivation layer covering the organic light emitting diodes, wherein the inorganic layer comprises the same material as the material for the inorganic passivation layer.

6. The organic light emitting diode display of claim 5 , wherein the inorganic layer comprises a single-layered structure comprising silicon oxide or silicon nitride, or a double-layered structure comprising silicon oxide and silicon nitride.

7. The organic light emitting diode display of claim 1 , wherein the organic light emitting diodes each comprise a first pixel electrode, an organic emissive layer, and a second pixel electrode, and the inorganic layer comprises the same material as the material for the second pixel electrode.

8. The organic light emitting diode display of claim 7 , wherein the inorganic layer contains a material selected from the group consisting of ITO, IZO, ZnO, and In 2 O 3 .

9. The organic light emitting diode display of claim 7 , wherein the inorganic layer contains a material selected from the group consisting of Al, an Al alloy, Ag, an Ag alloy, Au, and an Au alloy.

10. The organic light emitting diode display of claim 1 , wherein the organic light emitting diodes each comprise a first pixel electrode, an organic emissive layer, and a second pixel electrode, and the inorganic layer comprises the same material as the material for the first pixel electrode.

11. The organic light emitting diode display of claim 10 , wherein the inorganic layer comprises a material selected from the group consisting of Al, an Al alloy, Ag, an Ag alloy, Au, and an Au alloy.

12. The organic light emitting diode display of claim 10 , wherein the inorganic layer comprises a material selected from the group consisting of ITO, IZO, ZnO, and In 2 O 3 .

13. The organic light emitting diode display of claim 1 , further comprising driving transistors for driving the organic light emitting diodes, wherein the driving transistors each comprise a gate electrode, an interlayer insulating layer formed on the gate electrode, and source and drain electrodes formed on the interlayer insulating layer; and

wherein the inorganic layer comprises the same material as the material for the source and drain electrodes.

14. The organic light emitting diode display of claim 13 , wherein the inorganic layer comprises a material selected from the group consisting of Ti, a Ti alloy, Ta, and a Ta alloy.

15. The organic light emitting diode display of claim 14 , wherein the Ti-alloy is TiN.

16. The organic light emitting diode display of claim 14 , wherein the Ta-alloy is TaN.

17. The organic light emitting diode display of claim 1 further comprising driving transistors for driving the organic light emitting diodes, wherein the driving transistors each comprise a gate electrode, an interlayer insulating layer formed on the gate electrode, and source and drain electrodes formed on the interlayer insulating layer; and

wherein the inorganic layer comprises the same material as the material for the interlayer insulating layer.

18. The organic light emitting diode display of claim 17 , wherein the nonorganic layer is formed with a single-layered structure comprising silicon oxide or silicon nitride, or a double-layered structure comprising silicon oxide and silicon nitride.