Light emitting diodes and associated methods of manufacturing

1. A method for forming a light emitting diode (LED) on a substrate, comprising:

depositing an N-type gallium nitride (GaN) material on the substrate, the N-type GaN material having a first surface and a second surface opposite the first surface, the first surface being in direct contact with the substrate, the second surface being generally planar, the N-type GaN material having a plurality of crystal dislocations and corresponding crystal planes proximate to the second surface;

converting the second surface to an at least partially non-planar textured surface at least in part by removing at least some of the crystal dislocations from the corresponding crystal planes such that at least some of the crystal planes are exposed via the at least partially non-planar textured surface; and

forming an active region of the LED on the at least partially non-planar textured surface.

2. The method of claim 1 wherein removing at least some of the dislocations from the corresponding crystal planes includes removing at least some of the dislocations from the corresponding crystal planes to form indentations individually having one or more sloped surfaces.

3. The method of claim 2 wherein the exposed crystal planes within the individual indentations form an inverted pyramid shape having a hexagonal base.

4. A method for forming a light emitting diode (LED) on a substrate, comprising:

depositing an N-type gallium nitride (GaN) material on the substrate via metal organic chemical vapor deposition, the N-type GaN material having a first surface and a second surface opposite the first surface, the first surface being in direct contact with the substrate, the second surface being generally planar, the N-type GaN material having first gallium (Ga) and/or nitrogen (N) atoms at a plurality of crystal dislocations proximate to the second surface and second Ga and/or N atoms in a crystal lattice structure at least partially covered by the crystal dislocations;

converting the second surface to an at least partially non-planar textured surface at least in part by removing the first Ga and/or N atoms from the crystal dislocations without removing the second Ga and/or N atoms from the crystal lattice structure; and

forming an active region of the LED on the at least partially non-planar textured surface.

5. The method of claim 4 wherein removing the first Ga and/or N atoms from the crystal dislocations includes removing the first Ga and/or N atoms from the crystal dislocations to form indentations individually having one or more sloped surfaces.

6. The method of claim 5 wherein exposed crystal planes within the individual indentations form an inverted pyramid shape having a hexagonal base.

7. A method for forming a light emitting diode (LED) on a substrate, comprising:

depositing an N-type gallium nitride (GaN) material on the substrate via metal organic chemical vapor deposition, the N-type GaN material having a first surface and a second surface opposite the first surface, the first surface being in direct contact with the substrate, the second surface being generally planar, the N-type GaN material having a plurality of crystal dislocations and corresponding crystal planes proximate to the second surface;

converting the second surface to an at least partially non-planar textured surface at least in part by removing material from the second surface and forming a plurality of indentations individually having an inverted pyramid shape with a hexagonal base; and

forming an active region of the LED on the at least partially non-planar textured surface.

8. A method for forming a light emitting diode (LED) on a substrate, comprising:

forming an N-type GaN material on the substrate, the formed N-type GaN material having—

a first surface facing toward the substrate,

a generally planar second surface facing away from the substrate, and

a plurality of crystal dislocations and corresponding crystal planes proximate to the second surface;

removing at least some of the dislocations from the corresponding crystal planes to form, by the removal alone, indentations individually having one or more sloped surfaces, at least some of the crystal planes being exposed at the sloped surfaces; and

forming an active region of the LED, a shape of the active region at least partially conforming to the sloped surfaces.

9. The method of claim 8 wherein:

forming the N-type GaN material includes forming the N-type GaN material on the substrate via metal organic chemical vapor deposition (MOCVD);

the exposed crystal planes within the individual indentations form an inverted pyramid shape having a hexagonal base;

the method further comprises adjusting a process parameter to achieve a desired depth of the inverted pyramid shapes within the N-type GaN material; and

forming the active region includes depositing an indium gallium nitride (InGaN) material on the exposed crystal planes via metal organic chemical vapor deposition (MOCVD).

10. The method of claim 8 wherein forming the active region includes depositing an indium gallium nitride (InGaN) material on the exposed crystal planes via epitaxial growth.

11. The method of claim 8 wherein:

forming the N-type GaN material includes forming the N-type GaN material on the substrate via metal organic chemical vapor deposition (MOCVD), the formed N-type GaN material having first gallium (Ga) and/or nitrogen (N) atoms at the plurality of crystal dislocations proximate to the second surface and second Ga and/or N atoms in a crystal lattice structure at least partially surrounded by the crystal dislocations; and

removing at least some of the dislocations includes removing the first Ga and/or N atoms from the crystal dislocations without removing the second Ga and/or N atoms from the crystal lattice structure.

12. The method of claim 8 wherein:

forming the N-type GaN material includes forming the N-type GaN material on the substrate via metal organic chemical vapor deposition (MOCVD), the formed N-type GaN material having first gallium (Ga) and/or nitrogen (N) atoms at the plurality of crystal dislocations proximate to the second surface and second Ga and/or N atoms in a crystal lattice structure at least partially surrounded by the crystal dislocations; and

removing at least some of the dislocations includes

removing the first Ga and/or N atoms from the crystal dislocations at a first rate; and

removing the second Ga and/or N atoms from the crystal lattice structure at a second rate, the first rate being higher than the second rate.

13. The method of claim 8 wherein:

forming the N-type GaN material includes forming the N-type GaN material on the substrate via metal organic chemical vapor deposition (MOCVD), the formed N-type GaN material having first gallium (Ga) and/or nitrogen (N) atoms with a first bonding energy and second Ga and/or N atoms with a second bonding energy higher than the first bonding energy; and

removing at least some of the dislocations includes removing the first Ga and/or N atoms with the first bonding energy without removing the second Ga and/or N atoms with the second bonding energy.

14. The method of claim 8 wherein:

forming the N-type GaN material includes forming the N-type GaN material on the substrate via metal organic chemical vapor deposition (MOCVD); and

removing at least some of the dislocations includes removing at least some of the dislocations to form the indentations such that the indentations individually have an inverted pyramid shape with a hexagonal base.

15. The method of claim 14 wherein at least one of the inverted pyramid shapes overlaps with another of the inverted pyramid shapes.

16. A method for forming a light emitting diode (LED) on a substrate, comprising:

depositing an N-type GaN material via metal organic chemical vapor deposition (MOCVD) on the substrate, the N-type GaN material having—

a first surface in direct contact with the substrate, and

a generally planar second surface opposite the first surface;

contacting the second surface of the N-type GaN material with a solution of at least one of H 3 PO 4 and potassium hydroxide (KOH) to remove a portion of the N-type GaN material, the second surface becoming a treated second surface immediately after removing the portion of the N-type GaN material, the treated second surface having—

indentations with side surfaces, and

roughness higher than that of the second surface before the second surface is contacted with the solution;

adjusting at least one of a concentration of the solution, a reaction time, and a reaction temperature to achieve a desired roughness of the treated second surface; and

depositing an indium gallium nitride (InGaN) material on the treated second surface of the GaN material such that the InGaN material is in direct contact with the side surfaces of the indentations.

17. The method of claim 16 wherein adjusting at least one of the concentration of the solution, the reaction time, and the reaction temperature includes adjusting at least one of the concentration of the solution, the reaction time, and the reaction temperature such that the N-type GaN material is substantially completely non-planar.

18. The method of claim 16 wherein adjusting at least one of the concentration of the solution, the reaction time, and the reaction temperature includes adjusting at least one of the concentration of the solution, the reaction time, and the reaction temperature to achieve a desired average dimension of the indentations.

19. The method of claim 16 wherein:

the individual indentations have a depth relative to the second surface; and

adjusting at least one of the concentration of the solution, the reaction time, and the reaction temperature includes adjusting at least one of the concentration of the solution, the reaction time, and the reaction temperature to achieve a desired root-mean-square of the depths of the indentations.

20. A method for forming a light emitting diode (LED) on a substrate, comprising:

depositing an N-type GaN material via metal organic chemical vapor deposition (MOCVD) on the substrate, the N-type GaN material having—

a first surface in direct contact with the substrate, and

a generally planar second surface opposite the first surface,

contacting the second surface of the N-type GaN material with a solution of at least one of H 3 PO 4 and potassium hydroxide (KOH) to remove a portion of the N-type GaN material, the second surface becoming a treated second surface immediately after removing the portion of the N-type GaN material, the treated second surface having indentations with side surfaces; and

depositing an indium gallium nitride (InGaN) material on the treated second surface of the GaN material such that the InGaN material is in direct contact with the side surfaces of the indentations, wherein the treated second surface has a larger surface area upon which the InGaN material is deposited than the second surface before the second surface is contacted with the solution.

21. The method of claim 20 , further comprising adjusting at least one of a concentration of the solution, a reaction time, and a reaction temperature to achieve a desired area of the N-type GaN material.