Semiconductor light emitting device
The embodiment discloses a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer; a first electrode layer below the first conductive semiconductor layer; a semiconductor layer at an outer peripheral portion of the first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; and a second electrode layer on the second conductive semiconductor layer.
1. A semiconductor light emitting device, comprising:
a first conductive semiconductor layer;
a first electrode layer below the first conductive semiconductor layer;
a semiconductor layer at an outer peripheral portion of the first conductive semiconductor layer;
an active layer on the first conductive semiconductor layer;
a second conductive semiconductor layer on the active layer; and
a second electrode layer on the second conductive semiconductor layer,
wherein a portion of the semiconductor layer is disposed under a portion of the first conductive semiconductor layer and the semiconductor layer has a carrier concentration lower than a carrier concentration of the first conductive semiconductor layer.
2. The semiconductor light emitting device according to claim 1 , wherein the semiconductor layer is not vertically overlapped with the first electrode layer.
3. The semiconductor light emitting device according to claim 1 , wherein the semiconductor layer includes an undoped semiconductor layer.
4. The semiconductor light emitting device according to claim 1 , wherein the semiconductor layer is spaced apart from the active layer.
5. The semiconductor light emitting device according to claim 1 , wherein the first conductive semiconductor layer includes a first electrode contact layer and a first conductive nitride layer.
6. The semiconductor light emitting device according to claim 5 , wherein the first electrode contact layer is disposed on the first electrode layer and at a lateral side of the semiconductor layer.
7. The semiconductor light emitting device according to claim 5 , wherein the first conductive nitride layer has a carrier concentration higher than a carrier concentration of the semiconductor layer.
8. The semiconductor light emitting device according to claim 5 , wherein the first electrode contact layer and the first conductive nitride layer have a carrier concentration of about 5˜9×10 18 cm −3 or above.
9. The semiconductor light emitting device according to claim 5 , wherein the semiconductor layer is disposed at a lateral side of the first electrode contact layer and at an outer lower portion of the first conductive nitride layer.
10. The semiconductor light emitting device according to claim 1 , further comprising a channel layer disposed between an outer upper portion of the second conductive semiconductor layer and the second electrode layer.
11. The semiconductor light emitting device according to claim 10 , wherein the channel layer is formed of conductive material or insulating material.
12. The semiconductor light emitting device according to claim 1 , further comprising a conductive support member disposed on the second electrode layer.
13. The semiconductor light emitting device according to claim 1 , wherein the semiconductor layer has a carrier concentration of about 1˜5×10 15 cm −3 or below.
14. The semiconductor light emitting device according to claim 1 , wherein the semiconductor layer includes at least one selected from the group consisting of GaN, InN, AlN, InGaN, AlGaN, InAlGaN and AlInN.
15. The semiconductor light emitting device according to claim 1 , wherein the semiconductor layer is doped with at least one material selected from the group consisting of Si, Ge, Sn, Se and Te.
16. A semiconductor light emitting device, comprising:
a first conductive semiconductor layer including a first electrode contact layer and a first conductive nitride layer on the first electrode contact layer;
a first electrode layer below the first conductive semiconductor layer;
a semiconductor layer at a lateral side of the first electrode contact layer and at an outer lower portion of the first conductive nitride layer;
an active layer on the first conductive nitride layer;
a second conductive semiconductor layer on the active layer; and
a second electrode layer on the second conductive semiconductor layer,
wherein a portion of the semiconductor layer is disposed under a portion of the first conductive semiconductor layer and the semiconductor layer has a carrier concentration lower than a carrier concentration of the first conductive nitride layer.
17. The semiconductor light emitting device according to claim 16 , wherein the semiconductor layer is not vertically overlapped with the first electrode layer.
18. The semiconductor light emitting device according to claim 16 , wherein the first electrode contact layer and the first conductive nitride layer have a carrier concentration of about 5˜9×10 18 cm −3 or above.
19. The semiconductor light emitting device according to claim 16 , wherein the semiconductor layer has a carrier concentration of about 1˜5×10 15 cm −3 or below.
20. The semiconductor light emitting device according to claim 16 , wherein the semiconductor layer is doped with at least one material selected from the group consisting of Si, Ge, Sn, Se and Te.