Granted Patent B2

US 8,497,151 · App. 12/709,858 · Granted Jul 30, 2013

Inventors: Gang Xiong (Perrysburg, OH); Ricky C. Powell (Ann Arbor, MI); Aaron Roggelin (Millbury, OH); Kuntal Kumar (Sylvania, OH); Arnold Allenic (Ann Arbor, MI); Kenneth M. Ring (Waterville, OH); Charles Wickersham (Columbus, OH)

Assignee: First Solar, Inc.

Abstract

Claims (20)

1. A method of manufacturing a photovoltaic device comprising the steps of:

depositing a transparent conductive oxide layer over a substrate;

depositing a semiconductor window layer over the transparent conductive oxide layer;

depositing a semiconductor absorber layer over the semiconductor window layer, wherein one or more of the semiconductor window layer and the semiconductor absorber layer comprises a carrier concentration modifier, wherein the carrier concentration modifier comprises silicon; and

depositing a back contact layer over the semiconductor absorber layer.

2. The method of claim 1 , wherein one or more of the semiconductor window layer and the semiconductor absorber layer comprises a II-VI semiconductor.

3. The method of claim 1 , wherein the semiconductor window layer comprises cadmium sulfide (CdS).

4. The method of claim 1 , wherein the semiconductor absorber layer comprises cadmium telluride (CdTe).

5. The method of claim 1 , further comprising increasing carrier concentration in the semiconductor window layer.

6. The method of claim 1 , further comprising adding material comprising silicon to the semiconductor window layer or the semiconductor absorber layer.

7. The method of claim 1 , wherein the step of depositing of the semiconductor absorber layer comprises vapor transport deposition (VTD) from a cadmium and telluride source.

8. The method of claim 7 , wherein the vapor transport deposition (VTD) comprises blending material comprising silicon with the cadmium and telluride source.

9. The method of claim 8 , wherein a blend percentage of silicon in the cadmium and telluride source is in the range of 0.01% to 0.02%.

10. The method of claim 8 , wherein a blend percentage of silicon in the cadmium and telluride source is in the range of 0.001% to 1%.

11. The method of claim 1 , wherein the step of depositing of the semiconductor absorber layer comprises using a precursor comprising silicon.

12. The method of claim 1 , further comprising a step of post-deposition treatment of the semiconductor absorber layer and semiconductor window layer in an environment comprising silicon.

13. The method of claim 1 , further comprising a step of depositing of an additional layer comprising silicon, wherein the silicon of the additional layer can diffuse into the semiconductor absorber layer and semiconductor window layer.

14. The method of claim 1 , wherein the transparent conductive oxide layer comprises silicon, wherein the silicon of the transparent conductive oxide layer can diffuse into the semiconductor absorber layer and semiconductor window layer.

15. The method of claim 1 , wherein the back contact layer comprises silicon, wherein the silicon of the back contact layer can diffuse into the semiconductor absorber layer and semiconductor window layer.

16. The method of claim 1 , further comprising decreasing carrier concentration in the semiconductor absorber layer.

Assignments (8)

Continuity (2)