Acoustically coupled resonator filter with impedance transformation ratio controlled by resonant frequency difference between two coupled resonators
View Patent ↗A signal processing device includes a first acoustic resonator, a second acoustic resonator disposed on the first acoustic resonator, and a coupling layer between the first and the second acoustic resonators. The first acoustic resonator has a first electrical impedance and a first resonance frequency and includes a first set of electrodes, and a first piezoelectric layer having a first thickness, disposed between the first set of electrodes. The second acoustic resonator has a second electrical impedance and a second resonance frequency, and includes a second set of electrodes, and a second piezoelectric layer having a second thickness, wherein the second piezoelectric layer is disposed between the second set of electrodes. The first electrical impedance at a passband frequency of the device substantially differs from the second electrical impedance at the passband frequency of the device. The first and second resonance frequencies are substantially different from each other.
1. A coupled resonator filter, comprising:
a first film bulk acoustic resonator (FBAR), having a first electrical impedance and a first resonance frequency, the first FBAR comprising:
a first electrode,
a first piezoelectric layer having a first thickness, disposed on the first electrode, and
a second electrode disposed on the first piezoelectric layer;
a second FBAR, having a second electrical impedance and a second resonance frequency, and being disposed over the first FBAR, the second FBAR comprising:
a third electrode,
a second piezoelectric layer having a second thickness, disposed on the third electrode, and
a fourth electrode disposed on the second piezoelectric layer; and a
a coupling layer disposed between the first and the second FBARs,
wherein the first thickness of the first piezoelectric layer is substantially the same as the second thickness of the second piezoelectric layer,
wherein the first and second resonance frequencies are substantially different from each other, and
wherein a thickness of the fourth electrode is substantially different than a thickness of at least one of the first, second, and third electrodes.
2. The filter of claim 1 , wherein the combined thickness of the third and fourth electrodes is substantially less than a combined thickness of the first and second electrodes.
3. The filter of claim 1 , wherein the thickness of the fourth electrode is substantially less than a thickness of at least one of the first, second, and third electrodes.
4. The filter of claim 1 , wherein an electrical impedance of the filter between the first and second electrodes is substantially greater than an electrical impedance of the filter between the third and fourth and second electrodes.
5. The filter of claim 1 , wherein the first electrical impedance at a passband frequency of the device is greater than the second electrical impedance at the passband frequency of the device.
6. A signal processing device, comprising:
a first acoustic resonator, having a first electrical impedance and a first resonance frequency, the first acoustic resonator comprising:
a first set of electrodes, and
a first piezoelectric layer having a first thickness, disposed between the first set of electrodes;
a second acoustic resonator, having a second electrical impedance and a second resonance frequency, and being disposed over the first acoustic resonator, the second acoustic resonator comprising:
a second set of electrodes, and
a second piezoelectric layer having a second thickness that is substantially the same as the first thickness of the first piezoelectric layer, wherein the second piezoelectric layer is disposed between the second set of electrodes; and a
a coupling layer disposed between the first and the second acoustic resonators,
wherein the first electrical impedance at a passband frequency of the device substantially differs from the second electrical impedance at the passband frequency of the device, and
wherein the first and second resonance frequencies are substantially different from each other.
7. The device of claim 6 , wherein at least one of the electrodes of the first set of electrodes has a substantially different thickness than at least one of the electrodes of the second set of electrodes.
8. The device of claim 7 , wherein a top electrode of the first set of electrodes has a substantially different thickness than a corresponding top electrode of the second set of electrodes.
9. The device of claim 8 , wherein the top electrode of the second set of electrodes is substantially thinner than the corresponding top electrode of the first set of electrodes.
10. The device of claim 7 , wherein a top electrode of the second set of electrodes has a substantially different thickness than a bottom electrode of the second set of electrodes.
11. The device of claim 6 , wherein an electrical impedance of the device between the first set of electrodes of the first acoustic resonator is substantially greater than an electrical impedance of the device between the second set of electrodes of the second acoustic resonator.
12. The device of claim 6 , further comprising:
an amplifier having an output connected to at least a first electrode of one of the first and second sets of electrodes; and
an antenna having an input connected to at least a second electrode of the other one of the first and second sets of electrodes.
13. The device of claim 6 , further comprising:
an antenna having an output connected to at least a first electrode of one of the first and second sets of electrodes; and
an amplifier having an input connected to at least a second electrode of the other one of the first and second sets of electrodes.