IP Library Granted Patent US 8,547,730
Granted Patent B1
US 8,547,730 · App. 12/712,085 · Granted Oct 1, 2013

Method and system for providing a spin tunneling magnetic element having a crystalline barrier layer

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Quick Facts
Patent No.
US 8,547,730
App. No.
12/712,085
Granted
Oct 1, 2013
Kind
B1
Abstract

The method and system for providing a spin tunneling element are disclosed. The method and system include depositing a pinned layer, a barrier layer, and a free layer. The barrier layer has a first crystal structure and a texture. The free layer includes a first ferromagnetic layer and a second ferromagnetic layer. The first ferromagnetic is adjacent to the second ferromagnetic layer and between the second ferromagnetic layer and the barrier layer. The first ferromagnetic layer has the first crystal structure and the texture, while the second ferromagnetic layer has a second crystal structure different from the first crystal structure.

Claims (22)

1. A spin tunneling element comprising:

a pinned layer;

a barrier layer having a first crystal structure, and having a texture; and

a free layer having a first ferromagnetic layer and a second ferromagnetic layer, the first ferromagnetic layer adjoining and sharing an interface with the second ferromagnetic layer and between the second ferromagnetic layer and the barrier layer, the first ferromagnetic layer having the first crystal structure and the texture, the second ferromagnetic layer having a second crystal structure different from the first crystal structure, the free layer having a coercivity of not more than five Oersted.

2. The spin tunneling element of claim 1 wherein the barrier layer includes MgO.

3. The spin tunneling element of claim 2 wherein the barrier layer includes MgOX, where X is a nonmagnetic material.

4. The spin tunneling element of claim 2 wherein the texture is [100].

5. The spin tunneling element of claim 4 wherein the second ferromagnetic layer includes NiFe.

6. The spin tunneling element of claim 2 wherein the first ferromagnetic layer includes CoFe.

7. The spin tunneling element of claim 6 wherein the first ferromagnetic layer includes CoFeX, where X includes at least one of B and another nonmagnetic material.

8. The spin tunneling element of claim 1 wherein the first crystal structure is BCC.

9. The spin tunneling element of claim 8 wherein the second crystal structure is FCC.

10. The spin tunneling element of claim 1 wherein the free layer has an interlayer exchange coupling of not more than fifty Oersted.

11. The spin tunneling element of claim 1 wherein the free layer has a magnetostriction having an absolute value of not more than 1.0×10 −6 .

12. A spin tunneling element comprising:

a pinned layer;

a barrier layer, the barrier layer including crystalline MgO and having a [100] texture; and

a free layer having a layer including CoFe and a NiFe layer, the layer including CoFe adjoining and sharing an interface with the NiFe layer and being between the NiFe layer and the barrier layer, the layer including CoFe having a body centered cubic (BCC) crystal structure and the [100] texture, the NiFe layer having a FCC crystal structure, the free layer having a coercivity of not more than five Oersted, an interlayer exchange coupling of not more than fifty Oersted, and a magnetostriction having an absolute value of not more than 1.0×10 −6 .

13. A transducer comprising:

a read head including a spin tunneling element having a pinned layer, a barrier layer, and a free layer, the barrier layer having a first crystal structure and a texture, the free layer having a first ferromagnetic layer and a second ferromagnetic layer, the first ferromagnetic being adjoining and sharing an interface with the second ferromagnetic layer and between the second ferromagnetic layer and the barrier layer, the first ferromagnetic layer having the first crystal structure and the texture, the second ferromagnetic layer having a second crystal structure different from the first crystal structure, the free layer having a coercivity of not more than five Oersted.

14. The transducer of claim 13 wherein the free layer has an interlayer exchange coupling of not more than fifty Oersted.

15. The transducer of claim 13 wherein the free layer has a magnetostriction having an absolute value of not more than 1.0×10 −6 .

Assignments (9)
PATENT COLLATERAL AGREEMENT - DDTL LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 067045/0156 →
PATENT COLLATERAL AGREEMENT - A&R LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 064715/0001 →
RELEASE OF SECURITY INTEREST AT REEL 038710 FRAME 0845 Recorded Feb 8, 2022
From: JPMORGAN CHASE BANK, N.A.
To: WESTERN DIGITAL (FREMONT), LLC; WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 058965/0445 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 19, 2019
From: WESTERN DIGITAL (FREMONT), LLC
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 050450/0582 →
RELEASE OF SECURITY INTEREST Recorded Mar 5, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: WESTERN DIGITAL (FREMONT), LLC
Reel/Frame 045501/0158 →
SECURITY AGREEMENT Recorded May 16, 2016
From: WESTERN DIGITAL (FREMONT), LLC
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 038744/0755 →
SECURITY AGREEMENT Recorded May 16, 2016
From: WESTERN DIGITAL (FREMONT), LLC
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038744/0675 →
SECURITY AGREEMENT Recorded May 16, 2016
From: WESTERN DIGITAL (FREMONT), LLC
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 038710/0845 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 24, 2010
From: SHEN, YONG; LENG, QUNWEN
To: WESTERN DIGITAL (FREMONT), LLC
Reel/Frame 023987/0135 →