Magnetic booster for magnetic random access memory
Disclosed is a nonvolatile magnetic memory cell, comprising: a) a switchable magnetic element; b) a word line and a bit line to energize the switchable magnetic element; and c) a magnetic field boosting material positioned adjacent to at least one of the word line and the bit line to boost a magnetic field generated by current flowing therein.
1. A nonvolatile magnetic memory cell, comprising:
a switchable magnetic element;
a word line and a bit line to energize the switchable magnetic element; and
a magnetic field boosting material positioned adjacent to at least one of the word line and the bit line to boost a magnetic field generated by current flowing therein; wherein the magnetic field boosting material is positioned on a sidewall of a trench of at least one of the word line and the bit line.
2. The nonvolatile magnetic memory cell of claim 1 , wherein the switchable magnetic element is a magnetic tunnel junction.
3. The nonvolatile magnetic memory cell of claim 1 , wherein the magnetic field boosting material comprises a magnetic material.
4. The nonvolatile magnetic memory cell of claim 1 , wherein the magnetic field boosting material is selected from a group consisting of Fe, Cr, and Ni.
5. The nonvolatile magnetic memory cell of claim 1 , wherein the magnetic field boosting material is positioned on a sidewall of at least one of the word line and the bit line.
6. The nonvolatile magnetic memory cell of claim 1 , wherein the magnetic field boosting material is positioned using a damascene process.
7. The nonvolatile magnetic memory cell of claim 1 , wherein at least one of the word line and the bit line is patterned with sub etching.
8. An electronic device comprising:
a nonvolatile magnetic memory cell comprising
a switchable magnetic element,
a word line and a bit line to energize the switchable magnetic element, and
a magnetic field boosting material positioned adjacent to at least one of the word line and the bit line to boost a magnetic field generated by current flowing therein; wherein the magnetic field boosting material is positioned on a sidewall of a trench of at least one of the word line and the bit line.
9. The electronic device of claim 8 , wherein the switchable magnetic element is a magnetic tunnel junction.
10. The electronic device of claim 8 , wherein the magnetic field boosting material comprises a magnetic material.
11. The electronic device of claim 8 , wherein the magnetic field boosting material is selected from a group consisting of Fe, Cr, and Ni.
12. The electronic device of claim 8 , wherein the magnetic field boosting material is positioned on a sidewall of at least one of the word line and the bit line.
13. The electronic device of claim 8 , wherein at least one of the word line and the bit line is patterned with sub etching.
14. A method for fabricating a nonvolatile magnetic memory, the method comprising:
fabricating a plurality of switchable magnetic elements in an array;
fabricating a plurality of intersecting word lines and bit lines to energize each switchable magnetic element; and
fabricating at least one magnetic field boosting material positioned adjacent to at least one of the word line and the bit line to boost a magnetic field generated by current flowing therein; wherein the magnetic field boosting material is positioned on a sidewall of a trench of at least one of the word line and the bit line.
15. The method of claim 14 , wherein each switchable magnetic element in the array is a magnetic tunnel junction.
16. The method of claim 14 , wherein the magnetic field boosting material comprises a magnetic material.
17. The method of claim 14 , wherein the magnetic field boosting material is selected from a group consisting of Fe, Cr, and Ni.
18. The method of claim 14 , wherein the magnetic field boosting material is positioned on a sidewall of at least one of the word line and the bit line.
19. The method of claim 14 , wherein at least one of the word line and the bit line is patterned with sub etching.