PHYSICAL VAPOR DEPOSITION WITH INSULATED CLAMP
A physical vapor deposition apparatus includes a vacuum chamber having side walls, a cathode inside the vacuum chamber, the cathode configured to include a sputtering target, a radio frequency power supply configured to apply power to the cathode, an anode inside and electrically connected to the side walls of the vacuum chamber, a chuck inside and electrically isolated from the side walls of the vacuum chamber, the chuck configured to support a substrate, a clamp configured to hold the substrate to the chuck, wherein the clamp is electrically conductive, and an insulator configured to electrically isolate the substrate from the clamp.
1 . A physical vapor deposition apparatus comprising:
a vacuum chamber having side walls;
a cathode inside the vacuum chamber, wherein the cathode is configured to include a sputtering target;
a radio frequency power supply configured to apply power to the cathode;
an anode inside and electrically connected to the side walls of the vacuum chamber;
a chuck inside and electrically isolated from the side walls of the vacuum chamber, the chuck configured to support a substrate;
a clamp configured to hold the substrate to the chuck, wherein the clamp is electrically conductive; and
an insulator configured to electrically isolate the substrate from the clamp.
2 . The physical vapor deposition apparatus of claim 1 , wherein the insulator comprises quartz.
3 . The physical vapor deposition apparatus of claim 1 , wherein the insulator comprises alumina ceramic.
4 . The physical vapor deposition apparatus of claim 1 , wherein the insulator is annular.
5 . The physical vapor deposition apparatus of claim 1 , wherein the insulator is about 1 mm to 2 mm thick.
6 . The physical vapor deposition apparatus of claim 1 , wherein the target comprises a dielectric material.
7 . The physical vapor deposition apparatus of claim 6 , wherein the dielectric material comprises lead zirconate titinate (“PZT”).
8 . The physical vapor deposition apparatus of claim 1 , further comprises an impedance matching network electrically connected to the chuck.
9 . The physical vapor deposition apparatus of claim 1 , further comprising a shield inside and electrically connected to the walls of the chamber, wherein the shield and the clamp partially horizontally overlap.
10 . The physical vapor deposition apparatus of claim 9 , wherein a conductive portion of the clamp extends inwardly from a space near the shield towards the substrate.
11 . A method of physical vapor deposition comprising:
applying a radio frequency signal to a cathode in a physical vapor deposition apparatus, wherein the physical vapor deposition apparatus includes:
a vacuum chamber having side walls;
the cathode, the cathode inside the vacuum chamber and including a sputtering target;
an anode inside and electrically connected to the side walls of the vacuum chamber;
a chuck inside and electrically isolated from the side walls of the vacuum chamber, the chuck supporting a substrate;
a clamp holding the substrate to the chuck, wherein the clamp is electrically conductive; and
an insulator configured to electrically isolate the substrate from the clamp; and
depositing material from the sputtering target onto the substrate such that film having a substantially pure (111) crystalline structure is formed.
12 . The method of claim 11 , further comprising heating the chuck to between about 650° C. and 750° C.
13 . The method of claim 11 , wherein the radio frequency signal has a radio frequency power having a magnitude of between about 1000 W and 5000 W.
14 . The method of claim 13 , wherein the radio frequency power is about 3000 W.
15 . The method of claim 11 , wherein the target comprises a dielectric material.
16 . The method of claim 15 , wherein the dielectric material comprises lead zirconate titinate (“PZT”).
17 . The method of claim 11 , wherein the film has a thickness of between about 2000 Å and 10 μm.
18 . The method of claim 17 , wherein the thickness is between about 2 μm and 4 μm.