IP Library Granted Patent US 9,153,356
Granted Patent B2
US 9,153,356 · App. 12/714,482 · Granted Oct 6, 2015

High dielectric permittivity materials from composites of low dimensional metallic systems

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Quick Facts
Patent No.
US 9,153,356
App. No.
12/714,482
Granted
Oct 6, 2015
Kind
B2
Abstract

Metal nanoparticles are assembled in interrupted metal strands or other structures of characteristic dimensions and orientation to generate a giant dielectric response through a modified GE effect. Careful selection and modification of the host material and synthesis also leads to low dielectric breakdown voltages. In addition, the high dielectric composite material is employed in material configurations that are more scalable for industrial and consumer applications.

Claims (31)

1. A method of producing a high dielectric permittivity composite material comprising:

selecting a porous host material defining a first set of pores and a second set of pores, wherein a pore diameter of any pore of the first set of pores is not greater than 100 nm;

electrolyzing an ionic compound to produce metal nanostructures in the first set of pores;

sintering, after electrolyzing, the metal nanostructures to produce interrupted metal strands; and then

filling the second set of pores.

2. The method of claim 1 , wherein the porous host material is a zeolite.

3. The method of claim 2 , wherein the porous host material has channel lengths of 20 to 7000 nm.

4. The method of claim 3 , wherein the porous host material containing the interrupted metal strands has a dielectric constant that is at least 10 8 .

5. The method of claim 1 , wherein the porous host material is Zeolite L and the metal nanostructures comprise potassium.

6. The method of claim 5 , wherein the metal nanostructures are synthesized in the Zeolite L by Davy electrolysis of KOH.

7. The method of claim 6 , wherein the metal nanostructures are formed to have an optical distance of about 80 nm, which is configured to manifest the Gor'kov-Eliashberg effect.

8. The method of claim 1 , further comprising compacting the porous host material containing the metal nanostructures.

9. A method of producing a high dielectric permittivity composite material, comprising:

selecting a host material with pores, wherein the pores comprise nano- or micro-scale pores;

synthesizing conductive material in the pores to form interrupted strands of the conductive material in the pores, wherein the conductive material is a metal; and

filling the pores in the host material that are not filled with the conductive material,

wherein synthesizing the conductive material in the pores to form the interrupted strands comprises:

electrolyzing an ionic compound to produce nanostructures in the pores, wherein the nanostructures comprise the metal; and

current-induced melting, after electrolyzing, the nanostructures to produce the interrupted strands.

10. The method of claim 9 , wherein the host material is alumina, the conductive material is copper, the pores are filled with polyester, and a current in the range of 100 μA to 10 mA is applied to produce copper atom islands in the interrupted strands.

11. The method of claim 10 , wherein the filling comprises a low temperature polymerization of polyester.

12. The method of claim 10 , further comprising: applying a bias electrical field in a manner to generate a large dielectric response along an axis of one of the interrupted strands.

13. The method of claim 10 , further comprising:

machining the host material.

14. The method of claim 10 , further comprising:

stacking multiple sheets of the host material.

15. A method of producing a high dielectric permittivity composite material comprising:

selecting a porous host material defining a first set of pores and a second set of pores, wherein a pore diameter of any pore of the first set of pores is not greater than 100 nm;

electrolyzing an ionic compound to produce metal nanostructures in the first set of pores;

current-induced melting, after electrolyzing, the metal nanostructures to produce interrupted metal strands; and then

filling the second set of pores.

Assignments (1)
SECURITY INTEREST Recorded Jan 29, 2019
From: EMPIRE TECHNOLOGY DEVELOPMENT LLC
To: CRESTLINE DIRECT FINANCE, L.P.
Reel/Frame 048373/0217 →