Backfilled polycrystalline diamond cutter with high thermal conductivity
View Patent ↗A front face of a diamond table mounted to a substrate is processed, for example through an acid leach, to remove interstitial catalyst binder and form a thermal channel. A material is then introduced to the front face of the diamond table, the introduced material backfilling the front face of the diamond table to fill interstitial voids left by removal of the catalyst binder in the thermal channel to a desired depth. The material is selected to be less thermally expandable than the catalyst binder and/or more thermally conductive than the catalyst binder and/or having a lower heat capacity than the catalyst binder.
1. A PDC cutter, comprising:
a substrate;
a diamond table mounted to the substrate, the diamond table comprising diamond crystals and interstitial catalyst binder, the diamond table further having a front face with a thermal channel where the interstitial catalyst binder has been removed and further formed to additionally include in the thermal channel a material, the material being introduced to fill at least some interstitial voids left by removal of the interstitial catalyst binder in the thermal channel to a desired depth, the material being less thermally expandable than the catalyst binder and more thermally conductive than the catalyst binder; and
wherein the material is selected from a group consisting of: carbon, boron, molybdenum, cubic boron nitride, boron carbide, and titanium carbide (TiC 0.6 ).
2. The PDC cutter of claim 1 wherein the material is introduced into the diamond table thermal channel by hot isostatic pressing.
3. The PDC cutter of claim 1 wherein the material is introduced into the diamond table thermal channel by one of spark plasma sintering, field assisted sintering or pulsed electric current sintering.
4. The PDC cutter of claim 1 wherein the desired depth is between 0.010 mm to 1.0 mm.
5. The PDC cutter of claim 1 wherein the interstitial catalyst binder comprises cobalt.
6. The PDC cutter of claim 1 wherein the material is introduced into the thermal Channel by ion implantation.
7. The PDC cutter of claim 1 wherein the material is introduced into the thermal channel by spark plasma sintering.
8. The PDC cutter of claim 1 wherein the material is introduced into the thermal channel by cold pressing.
9. A method of backfilling a PDC cutter, comprising:
removing from a front face of a diamond table mounted to a substrate, the diamond table comprising diamond crystals and interstitial catalyst binder, the interstitial catalyst binder to form a thermal channel; and
introducing a material to the front face of the diamond table, the introduced material backfilling the front face of the diamond table to fill interstitial voids left by removal of the catalyst binder in the thermal channel to a desired depth, the material being less thermally expandable than the catalyst binder and more thermally conductive than the catalyst binder; and
wherein introducing the material comprises introducing the material into the thermal channel by a process selected from a group consisting of ion implantation, spark plasma sintering, and cold pressing.
10. The method of claim 9 where removing comprises leaching the interstitial catalyst binder from the front face of the diamond table.
11. The method of claim 9 wherein the material is cubic boron nitride.
12. The method of claim 9 wherein the material is an elemental material selected from a group consisting of: carbon, molybdenum, and boron.
13. The method of claim 9 wherein the material is one of a combination of two or more of carbon, molybdenum, and boron or an alloy including one or more of carbon, molybdenum, and boron.
14. The method of claim 9 wherein the material is boron carbide.
15. The method of claim 9 wherein the material is TiC 0.6 .
16. The method of claim 9 wherein the material is one of an iron oxide or double oxide.
17. The method of claim 9 wherein material is an intermetallic material.
18. The method of claim 9 wherein the material is a ceramic material.
19. The method of claim 9 wherein the desired depth is between 0.010 mm to 1.0 mm.
20. The method of claim 9 wherein the material is introduced into the thermal channel by ion implantation.
21. The method of claim 9 wherein the material is introduced into the thermal channel by spark plasma sintering.
22. The method of claim 9 wherein the material is introduced into the thermal channel by cold pressing.
23. The method of claim 22 wherein the material comprises micronized particles and introducing the material comprises pressing the micronized particles into the front face of the diamond table.
24. The method of claim 9 wherein the material has a lower heat capacity than the catalyst binder.
25. A method of backfilling a PDC cutter, comprising:
removing from a front face of a diamond table mounted to a substrate, the diamond table comprising diamond crystals and interstitial catalyst binder, the interstitial catalyst binder to form a thermal channel; and
introducing a material to the front face of the diamond table, the introduced material backfilling the front face of the diamond table to fill interstitial voids left by removal of the catalyst binder in the thermal channel to a desired depth, the material being less thermally expandable than the catalyst binder and more thermally conductive than the catalyst binder; and
wherein introducing the material comprises introducing the material into the thermal channel by cryogenic methods or cold pressing or both.
26. The method of claim 25 wherein the material comprises micronized particles and introducing the material comprises pressing the micronized particles into the front face of the diamond table.
27. The method of claim 25 wherein the material has a lower heat capacity than the catalyst binder.