Method of making thin film transistor

1. A method of making a source/drain electrode and a channel of a thin film transistor, comprising:

providing a substrate and sequentially forming a semiconductor layer and a metal layer on the substrate;

providing a photo-mask, wherein the photo-mask comprises:

a transparent substrate;

a first opaque pattern and a second opaque pattern disposed on the transparent substrate, wherein the first opaque pattern comprises a first side edge and a second side edge, the second opaque pattern comprises a third side edge and a fourth side edge, and the first side edge of the first opaque pattern is disposed in opposition to the third side edge of the second opaque pattern;

a transparent single slit disposed between the first side edge of the first opaque pattern and the third side edge of the second opaque pattern; and

at least a translucent pattern disposed on the transparent substrate, wherein the translucent pattern is connected to the second side edge of the first opaque pattern and the translucent pattern is connected to the fourth side edge of the second opaque pattern, wherein the translucent pattern is not located between the transparent substrate and the first opaque pattern, and is not located between the transparent substrate and the second opaque pattern;

forming a photoresist layer on the metal layer and using the photo-mask to perform an exposure process on the photoresist layer, wherein the first opaque pattern and the second opaque pattern of the photo-mask correspond to a first region of the photoresist layer, the transparent single slit of the photo-mask corresponds to a second region of the photoresist layer, and the translucent pattern of the photo-mask corresponds to a third region of the photoresist layer;

performing a development process on the photoresist layer to remove a portion of the photoresist layer to uncover the metal layer, wherein, after the development process, a thickness of the photoresist layer of the first region is thicker than a thickness of the photoresist layer of the second region and a thickness of the photoresist layer of the third region;

removing the metal layer and the semiconductor layer uncovered by the photoresist layer;

performing an ashing process on the photoresist layer to reduce the thickness of the photoresist layer of the first region and removing the photoresist layer of the second region and the photoresist layer of the third region to uncover the metal layer;

removing the metal layer and a portion of the semiconductor layer uncovered by the photoresist layer to define a source electrode, a drain electrode, a channel and an extension portion; and

removing the photoresist layer.

2. The method of making a source/drain electrode and a channel of a thin film transistor of claim 1 , wherein a transmittance of the translucent pattern is substantially between 25% and 40%.

3. The method of making a source/drain electrode and a channel of a thin film transistor of claim 1 , wherein the translucent pattern has a length substantially between 2 micrometers and 7 micrometers.

4. The method of making a source/drain electrode and a channel of a thin film transistor of claim 1 , wherein the semiconductor layer comprises an amorphous silicon semiconductor layer.

5. The method of making a source/drain electrode and a channel of a thin film transistor of claim 1 , wherein the drain electrode comprises a first side edge and a second side edge, the source electrode comprises a third side edge, the first side edge of the drain electrode is disposed in opposition to the third side edge of the source electrode, and a minimum distance between the first side edge of the drain electrode and the third side edge of the source electrode is substantially between 1.5 micrometers and 3.5 micrometers.

6. The method of making a source/drain electrode and a channel of a thin film transistor of claim 5 , wherein the extension portion extends to the outside of an imaginary extension line of the second side edge of the drain electrode.

7. The method of making a source/drain electrode and a channel of a thin film transistor of claim 6 , wherein a length of the extension portion is substantially between 0.2 micrometers and 3 micrometers.

8. The method of making a source/drain electrode and a channel of a thin film transistor of claim 1 , wherein a minimum distance between the first side edge of the first opaque pattern and the third side edge of the second opaque pattern is substantially between 1.5 micrometers and 2.5 micrometers.

9. A method of making a source/drain electrode and a channel of a thin film transistor, comprising:

providing a substrate and sequentially forming a semiconductor layer and a metal layer on the substrate;

providing a photo-mask, wherein the photo-mask comprises:

a transparent substrate;

a first opaque pattern and a second opaque pattern disposed on the transparent substrate, wherein the first opaque pattern comprises a first side edge and a second side edge, the second opaque pattern comprises a third side edge and a fourth side edge, and the first side edge of the first opaque pattern is disposed in opposition to the third side edge of the second opaque pattern; and

at least a translucent pattern disposed on the transparent substrate, wherein the translucent pattern is connected to the second side edge of the first opaque pattern and the translucent pattern is connected to the fourth side edge of the second opaque pattern to form a transparent single slit defined by the first side edge of the first opaque pattern, the third side edge of the second opaque pattern, the translucent pattern and the transparent substrate, wherein the translucent pattern is not located between the transparent substrate and the first opaque pattern, and is not located between the transparent substrate and the second opaque pattern;

forming a photoresist layer on the metal layer and using the photo-mask to perform an exposure process on the photoresist layer, wherein the first opaque pattern and the second opaque pattern of the photo-mask correspond to a first region of the photoresist layer, the transparent single slit of the photo-mask corresponds to a second region of the photoresist layer, and the translucent pattern of the photo-mask corresponds to a third region of the photoresist layer;

performing a development process on the photoresist layer to remove a portion of the photoresist layer to uncover the metal layer, wherein, after the development process, a thickness of the photoresist layer of the first region is thicker than a thickness of the photoresist layer of the second region and a thickness of the photoresist layer of the third region;

removing the metal layer and the semiconductor layer uncovered by the photoresist layer;

performing an ashing process on the photoresist layer to reduce the thickness of the photoresist layer of the first region and removing the photoresist layer of the second region and the photoresist layer of the third region to uncover the metal layer;

removing the metal layer and a portion of the semiconductor layer uncovered by the photoresist layer to define a source electrode, a drain electrode, a channel and an extension portion; and

removing the photoresist layer.

10. The method of making a source/drain electrode and a channel of a thin film transistor of claim 9 , wherein a transmittance of the translucent pattern is substantially between 25% and 40%.

11. The method of making a source/drain electrode and a channel of a thin film transistor of claim 9 , wherein the translucent pattern has a length substantially between 2 micrometers and 7 micrometers.

12. The method of making a source/drain electrode and a channel of a thin film transistor of claim 9 , wherein the semiconductor layer comprises an amorphous silicon semiconductor layer.

13. The method of making a source/drain electrode and a channel of a thin film transistor of claim 9 , wherein the drain electrode comprises a first side edge and a second side edge, the source electrode comprises a third side edge, the first side edge of the drain electrode is disposed in opposition to the third side edge of the source electrode, and a minimum distance between the first side edge of the drain electrode and the third side edge of the source electrode is substantially between 1.5 micrometers and 3.5 micrometers.

14. The method of making a source/drain electrode and a channel of a thin film transistor of claim 13 , wherein the extension portion extends to the outside of an imaginary extension line of the second side edge of the drain electrode.

15. The method of making a source/drain electrode and a channel of a thin film transistor of claim 14 , wherein a length of the extension portion is substantially between 0.2 micrometers and 3 micrometers.

16. The method of making a source/drain electrode and a channel of a thin film transistor of claim 9 , wherein a minimum distance between the first side edge of the first opaque pattern and the third side edge of the second opaque pattern is substantially between 1.5 micrometers and 2.5 micrometers.