Nanoimprint resist, nanoimprint mold and nanoimprint lithography

1. A nanoimprint lithography method comprising:

providing a master stamp with a first nanopattern formed by a plurality of projecting portions and gaps and a substrate;

forming a first sacrifice layer, a second sacrifice layer and a nanoimprint resist on the substrate, wherein the nanoimprint resist comprises a hyperbranched polyurethane oligomer (HP), a perfluoropolyether (PFPE), a methylmethacrylate (MMA), a diluent solvent and a photo initiator;

pressing the first nanopattern into the nanoimprint resist, and forming a second nanopattern in the nanoimprint resist; and

transferring the second nanopattern to the substrate.

2. The method of claim 1 , wherein the HP is polymerized by a copolymerization of trimellitic anhydride, ethylene mercaptan, and epoxy acrylic acid, or polymerized by a ring-opening copolymerization epoxy acrylic acid and ethylene glycol.

3. The method of claim 2 , wherein a chemical structure of the HP is:

4. The method of claim 1 , wherein the diluent solvent is 2-hydroxyethyl methacrylate or 2-Hydroxy Ethyl 2-methyl ethylene.

5. The method of claim 1 , wherein in the nanoimprint resist, a weight percent of the HP is in a range from about 50 wt % to about 60 wt %, a weight percent of the PFPE is in a range from about 3 wt % to about 5 wt %, a weight percent of the MMA is in a range from about 5 wt % to about 10 wt %, a weight percent of the diluents solvent is in a range from about 25 wt % to about 35 wt %, and a weight percent of the photo initiator is in a range from about 0.1% to about 2%.

6. The nanoimprint lithography method of claim 1 , wherein the step of pressing the first nanopattern into the nanoimprint resist, further comprises:

compressing the master stamp with the substrate to press the first nanopattern into the nanoimprint resist; and

curing the nanoimprint resist, and

separating the master stamp from the substrate to form a second nanopattern in the nanoimprint resist, the second nanopattern comprising a plurality of protrusions and recesses.

7. The method of claim 6 , wherein in step of curing the naoimprint resist, the nanoimprint resist is cured via UV light.

8. The method of claim 6 , wherein after separating the master stamp from the substrate, there are remains of the nanoimprrint resist in at least one of the recesses.

9. The nanoimprint lithography method of claim 8 , wherein the step of transferring the second nanopattern to the substrate further comprises:

removing the remains of the nanoimprrint resist at the bottom of the recesses to expose the second sacrifice layer in part;

etching the second sacrifice layer exposed by the recesses to expose the first sacrifice layer in part;

etching the first sacrifice layer exposed by the recesses to expose the substrate in part; and

etching the substrate exposed by the recesses.

10. A nanoimprint lithography method comprising the steps of:

providing a master stamp with a first nanopattern and a substrate; forming a first sacrifice layer and a second sacrifice layer on the substrate;

depositing a nanoimprint resist on the first nanopattern, the nanoimprint resist comprising a hyperbranched polyurethane oligomer (HP), a perfluoropolyether (PFPE); a methylmethacrylate (MMA), a diluent solvent and a photo initiator;

attaching the second sacrifice layer to the nanoimprint resist, forming a second nanopattern in the naoimprint resist; and

transferring the second nanopattern to the substrate.

11. The method of claim 10 , wherein the HP is polymerized by a copolymerization of trimellitic anhydride, ethylene mercaptan, and epoxy acrylic acid, or polymerized by a ring-opening copolymerization epoxy acrylic acid and ethylene glycol.

12. The method of claim 11 , wherein a chemical structure of the HP is:

13. The method of claim 10 , wherein the diluent solvent is 2-hydroxyethyl methacrylate or 2-Hydroxy Ethyl 2-methyl ethylene.

14. The method of claim 10 , wherein in the nanoimprint resist, a weight percent of the HP is in a range from about 50 wt % to about 60 wt %, a weight percent of the PFPE is in a range from about 3 wt % to about 5 wt %, a weight percent of the MMA is in a range from about 5 wt % to about 10 wt %, a weight percent of the diluents solvent is in a range from about 25 wt % to about 35 wt %, and a weight percent of the photo initiator is in a range from about 0.1% to about 2%.