Combined semiconductor rectifying device and the electric power converter using the same
View Patent ↗A combined semiconductor rectifying device includes PN-junction silicon diode and Schottky barrier diode exhibiting a breakdown voltage higher than the breakdown voltage of PN-junction silicon diode, and Schottky barrier diode is made of a semiconductor, the band gap thereof is wider than the band gap of silicon. The combined semiconductor rectifying device exhibits a shortened reverse recovery time, low reverse leakage current characteristics and a high breakdown voltage, and is used advantageously in an electric power converter.
1. A combined semiconductor rectifying device comprising:
a PN-junction silicon diode and a Schottky barrier diode connected only in series, and not in parallel, to each other, and such that a current can flow between the PN-junction silicon diode and a Schottky barrier diode;
wherein the Schottky barrier diode exhibits a breakdown voltage equal to or higher than a breakdown voltage of the PN-junction silicon diode;
wherein the Schottky barrier diode comprises a semiconductor comprising a band gap wider than a band gap of silicon; and
wherein no other diodes are included in the rectifying device.
2. The combined semiconductor rectifying device according to claim 1 , wherein the semiconductor comprises a silicon carbide semiconductor or a gallium nitride semiconductor.
3. The combined semiconductor rectifying device circuit according to claim 2 , wherein the PN-junction silicon diode and the Schottky barrier diode are connected in series to each other in chip states thereof and sealed with a resin in a package.
4. The combined semiconductor rectifying device circuit according to claim 1 , wherein the PN-junction silicon diode and the Schottky barrier diode are connected in series to each other in chip states thereof and sealed with a resin in a package.
5. An electric power converter comprising:
a circuit comprising a switching semiconductor device and an inductor;
wherein the circuit exhibits a power factor correction function; and
wherein the circuit further comprises a combined semiconductor rectifying device including a PN-junction silicon diode and a Schottky barrier diode connected only in series, and not in parallel, to each other, and such that a current can flow between the PN-junction silicon diode and a Schottky barrier diode, wherein the Schottky barrier diode exhibits a breakdown voltage equal to or higher than a breakdown voltage of the PN-junction silicon diode, wherein the Schottky barrier diode comprises a semiconductor comprising a band gap wider than a band gap of silicon, and wherein no other diodes are included in the rectifying device.
6. The electric power converter as claimed in claim 5 , wherein the Schottky barrier diode comprises a silicon carbide semiconductor or a gallium nitride semiconductor.
7. The electric power converter as claimed in claim 6 , wherein, the PN-junction silicon diode and the Schottky barrier diode are connected in series to each other in chip states thereof and sealed with a resin in a package.
8. The electric power converter as claimed in claim 5 , wherein the PN-junction silicon diode and the Schottky barrier diode are connected in series to each other in chip states thereof and sealed with a resin in a package.