Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process
View Patent ↗An improvement to a method and an apparatus for growing a monocrystalline silicon ingot from silicon melt according to the CZ process. The improvement performs defining an error between a target taper of a meniscus and a measured taper, and translating the taper error into a feedback adjustment to a pull-speed of the silicon ingot. The conventional control model for controlling the CZ process relies on linear control (PID) controlling a non-linear system of quadratic relationship defined in the time domain between the diameter and the pull-speed. The present invention transforms the quadratic relationship in the time domain between the diameter and the pull-speed into a simile, linear relationship in the length domain between a meniscus taper of the ingot and the pull-speed. The present invention applies a linear control (modified PID) which operates in the length domain, and controls a system that has a linear relationship between the ingot taper and the pull-speed in the length domain to control the diameter of a growing silicon ingot.
1. An apparatus for growing a monocrystalline silicon ingot from silicon melt according to the CZ process, comprising:
a taper error detector configured to define an error between a target taper of a meniscus and a measured taper; and
a feedback control configured to translate the taper error into a feedback adjustment to a pull-speed of the silicon ingot, wherein the feedback control integrates the taper error over a length of the grown ingot to derive an i-term of the feedback adjustment.
2. An apparatus according to claim 1 , further comprising:
a diameter error detector configured to define an error between a target diameter of the silicon ingot and a measured diameter; and
a taper profiler configured to translate the diameter error into the target taper.
3. An apparatus according to claim 2 , wherein the taper profiler is configured to multiply the diameter error with a constant within predetermined taper limits.
4. An apparatus according to claim 1 , wherein the measured taper is calculated from the pull-speed and the measured diameter.
5. An apparatus according to claim 1 , wherein the feedback control is configured to multiply the taper error with a constant to derive a p-term of the feedback adjustment.
6. An apparatus according to claim 1 , further comprising a feed-forward control configured to translate the target taper into a feed-forward adjustment to the pull-speed.
7. An apparatus according to claim 1 , further comprising an integrator configured to integrate the i-term adjustment over time to derive the temperature deviation.
8. An apparatus according to claim 7 , further comprising a PID control configured to effect a PID control, using the temperature deviation, to control the temperature of the silicon melt.
9. An apparatus for growing a monocrystalline silicon ingot from silicon melt according to the CZ process, comprising:
an error detector configured to define an error between a target value of a parameter and a measured value of the parameter; and
an integrator configured to integrate the error in a length domain to derive a feedback adjustment to a pull-speed of the silicon ingot in order to make a diameter of the silicon ingot uniform along its length.
10. An apparatus according to claim 9 , wherein the parameter is a taper of an ingot.
11. An apparatus according to claim 9 , wherein the parameter is a diameter of the silicon ingot.
12. An apparatus according to claim 9 , wherein the integrator integrates the error over a length of the grown silicon ingot.