Nanoimprint Lithography Template and Method of Fabricating Semiconductor Device Using the Same

1 . A method of fabricating a semiconductor device using a nanoimprint lithography template, comprising:

preparing a semiconductor substrate having a material layer thereon;

forming a polymer layer on the material layer, said polymer layer having a first refractive index;

pressing a nanoimprint lithography template into the polymer layer to change the polymer layer into a polymer pattern;

removing the nanoimprint lithography template to expose the polymer pattern;

forming a material pattern by patterning the material layer using the polymer pattern as a patterning mask; and

removing the polymer pattern from the material pattern,

wherein the nanoimprint lithography template comprises:

a transparent template substrate having second refractive index and lower than the first refractive index;

a stamp pattern on a surface of the template substrate and having inclined sidewalls; and

a coating layer on the inclined sidewalls of the stamp pattern, said coating layer having a third refractive index higher than the second refractive index and lower than the first refractive index.

2 . The method according to claim 1 , further comprising, radiating light through the nanoimprint lithography template to the polymer layer.

3 . The method according to claim 1 , wherein the coating layer comprises a first unit coating layer in direct contact with the sidewalls of the stamp pattern and a second unit coating layer on the first unit coating layer.

4 . The method according to claim 3 , wherein the first unit coating layer has a fourth refractive index and the second unit coating layer has a fifth refractive index, and wherein the fourth and fifth refractive indices are different from each other.

5 . The method according to claim 4 , wherein the fifth refractive index is higher than the fourth refractive index.

6 . The method according to claim 3 , wherein the first unit coating layer has a higher refractive index than the refractive index of the template substrate.

7 . The method according to claim 3 , wherein one of the unit coating layers is formed on both the sidewalls and bottoms of the stamp pattern, and another one of the unit coating layers is formed only on the sidewalls of the stamp pattern.

8 . The method according to claim 1 , wherein an angle of the inclined sidewalls with respect to a bottom surface of the stamp pattern is from about 50 degrees to about 85 degrees

9 . A method of fabricating a semiconductor device using a nanoimprint lithography template, comprising:

preparing a semiconductor substrate having a material layer thereon,

forming a polymer layer on the material layer, said polymer layer having a first refractive index;

pressing a nanoimprint lithography template into the polymer layer to change the polymer layer into an imprinted polymer pattern;

radiating UV-light onto the imprinted polymer pattern to change it into a hardened polymer pattern;

removing the nanoimprint lithography template to expose the hardened polymer pattern;

forming a material pattern by patterning the material layer using the hardened polymer pattern as a patterning mask; and

removing the hardened polymer pattern from the material pattern,

wherein the nanoimprint lithography template comprises,

a transparent template substrate having a second refractive index lower than the first refractive index;

a stamp pattern on a surface on the template substrate and having inclined sidewalls; and

a coating layer formed on the inclined sidewalls of the stamp pattern, said coating layer having a third refractive index higher than the second refractive index and lower than the first refractive index,

wherein the coating layer comprises a first unit coating layer in direct contact with the sidewalls of the stamp pattern and a second unit coating layer on the first unit coating layer, and

wherein a refractive index of the second coating layer is higher than a refractive index of the first coating layer.