METHOD OF MANUFACTURING STAMPER
A method of manufacturing a stamper for nanoimprinting is provided which enables formation of finer patterns and which can be executed inexpensively. The method includes a step of forming a metal thin film on the surface of a substrate; a step of forming a resist layer on the surface of the metal thin film; a step of forming a relief pattern in the resist layer in use of an electron beam lithography method; a step of etching the metal thin film in imitation of the relief pattern in the resist layer, and forming a pattern-shaped metal mask; and, a step of forming a relief pattern on the substrate in imitation of the metal mask. In step (d), by side-etching the metal thin film, the width of the protruding portions formed in the substrate in step (e) are reduced to be less than the width of the depression portions of the relief pattern formed in step (c).
1 . A method of manufacturing a stamper for nanoimprinting having a relief shape on a surface thereof, the method comprising the steps of:
(a) forming a metal thin film on a surface of a substrate;
(b) forming a resist layer on a surface of the metal thin film;
(c) forming a relief pattern in the resist layer in use of an electron beam lithography method;
(d) etching the metal thin film in imitation of the relief pattern in the resist layer, and forming a metal mask; and
(e) forming a relief pattern on the substrate in imitation of the metal mask,
wherein in step (d), by side-etching the metal thin film, a width of protruding portions formed in the substrate in step (e) are reduced to be less than a width of depression portions of the relief pattern formed in step (c).
2 . The method of manufacturing a stamper for nanoimprinting according to claim 1 , wherein an amount of side etching of the metal thin film in step (d) is 1 nm or greater and 50 nm or less.
3 . The method of manufacturing a stamper for nanoimprinting according to claim 1 , wherein step (d) is performed by a reactive-ion etching method in use of a gas mixture containing chlorine and oxygen.
4 . A method of manufacturing a plurality of stampers for nanoimprinting having a relief shape on a surface thereof, the method comprising the steps of:
(1) forming a master stamper, according to a method comprising the steps of: (a) forming a metal thin film on a surface of a substrate; (b) forming a resist layer on a surface of the metal thin film; (c) forming a relief pattern in the resist layer in use of an electron beam lithography method; (d) etching the metal thin film in imitation of the relief pattern in the resist layer, and forming a metal mask; and (e) forming a relief pattern on the substrate in imitation of the metal mask, wherein in step (d), by side-etching the metal thin film, a width of protruding portions formed in the substrate in step (e) are reduced to be less than a width of depression portions of the relief pattern formed in step (c);
(2) using the master stamper, transferring the relief shape thereof and forming a plurality of mother stampers; and,
(3) using each of the plurality of mother stampers, transferring the relief shapes thereof and manufacturing a plurality of stampers.
5 . The method of manufacturing a plurality of stampers for nanoimprinting according to claim 4 , wherein step (2) is executed by electroforming, by nanoimprinting, or by injection molding.
6 . The method of manufacturing a plurality of stampers for nanoimprinting according to claim 4 , wherein step (3) is executed by electroforming, by nanoimprinting, or by injection molding.
7 . The method of manufacturing a plurality of stampers for nanoimprinting according to claim 4 , further comprising the steps of:
(4) transferring the relief shape of a stamper and forming a plurality of mother stampers; and
(5) using each of the plurality of mother stampers obtained in step (4) to transfer the relief shapes thereof and manufacture a plurality of stampers,
wherein the stamper used in step (4) is the stamper obtained in either step (3) or in step (5), and the steps (4) and (5) are repeated one or more times.
8 . The method of manufacturing a plurality of stampers for nanoimprinting according to claim 4 , wherein an amount of side etching of the metal thin film in step (d) is 1 nm or greater and 50 nm or less.
9 . The method of manufacturing a plurality of stampers for nanoimprinting according to claim 4 , wherein step (d) is performed by a reactive-ion etching method in use of a gas mixture containing chlorine and oxygen.