Semiconductor device and method for manufacturing the semiconductor device
View Patent ↗If an oxide semiconductor layer is crystallized by heat treatment without being covered with an inorganic insulating film, surface unevenness and the like are formed due to the crystallization, which may cause variation in electrical characteristics. Steps are performed in the following order: a second insulating film is formed on an oxide semiconductor layer over a substrate and then heat treatment is performed, instead of performing heat treatment during a period immediately after formation of the oxide semiconductor layer and immediately before formation of an inorganic insulating film including silicon oxide on the oxide semiconductor layer. The density of hydrogen included in the inorganic insulating film including silicon oxide is 5×10 20 /cm 3 or more, and the density of nitrogen is 1×10 19 /cm 3 or more.
1. A method for manufacturing a semiconductor device comprising the steps of:
forming an oxide semiconductor layer having an amorphous structure over a substrate having an insulating surface;
forming an inorganic insulating film including silicon oxide on the oxide semiconductor layer, wherein a substrate temperature is less than or equal to 300° C.; and
performing heat treatment at 300° C. or higher after the inorganic insulating film including silicon oxide is formed,
wherein the oxide semiconductor layer is not heated at 300° C. or higher during a period after the formation of the oxide semiconductor layer and before the formation of the inorganic insulating film.
2. The method for manufacturing the semiconductor device according to claim 1 , wherein density of hydrogen included in the inorganic insulating film is 5×10 20 /cm 3 or more.
3. The method for manufacturing the semiconductor device according to claim 1 , wherein density of nitrogen included in the inorganic insulating film is 1×10 19 /cm 3 or more.
4. The method for manufacturing the semiconductor device according to claim 1 , wherein the heat treatment is performed in an air atmosphere or in a nitrogen atmosphere.
5. The method for manufacturing the semiconductor device according to claim 1 , wherein the inorganic insulating film is formed using at least an N 2 O gas.
6. The method for manufacturing the semiconductor device according to claim 1 , wherein the substrate temperature at the time of forming the inorganic insulating film is 100° C. or higher and 300° C. or lower.
7. The method for manufacturing the semiconductor device according to claim 1 , wherein the oxide semiconductor layer includes at least one of indium, gallium, and zinc.
8. The method for manufacturing the semiconductor device according to claim 1 , wherein the oxide semiconductor layer is a thin film represented by InMO 3 (ZnO) m (m>0) wherein M denotes one or more of metal elements selected from Ga, Fe, Ni, Mn, or Co.
9. The method for manufacturing the semiconductor device according to claim 8 , wherein M denotes Ga.
10. The method for manufacturing the semiconductor device according to claim 1 , wherein a wiring is further formed on the inorganic insulating film after the heat treatment.
11. The method for manufacturing the semiconductor device according to claim 1 , wherein the heat treatment is performed more than once.
12. A method for manufacturing a semiconductor device comprising the steps of:
forming a gate electrode over a substrate having an insulating surface;
forming a gate insulating layer over the gate electrode;
forming an oxide semiconductor layer having a first amorphous structure over the gate insulating layer;
forming a source electrode and a drain electrode over the oxide semiconductor layer;
forming an inorganic insulating film including silicon oxide on the oxide semiconductor layer, wherein a substrate temperature is less than or equal to 300° C.; and
performing heat treatment at 300° C. or higher and lower than or equal to a strain point of the substrate after the inorganic insulating film is formed,
wherein the oxide semiconductor layer is not heated at 300° C. or higher during a period after the formation of the oxide semiconductor layer and before the formation of the inorganic insulating film.
13. The method for manufacturing the semiconductor device according to claim 12 , wherein the substrate temperature at the time of forming the inorganic insulating film is lower than a substrate temperature at the time of forming the gate insulating layer.
14. The method for manufacturing the semiconductor device according to claim 12 , wherein the oxide semiconductor layer subjected to the heat treatment has a second amorphous structure.
15. The method for manufacturing the semiconductor device according to claim 12 , wherein density of hydrogen included in the inorganic insulating film is 5×10 20 /cm 3 or more.
16. The method for manufacturing the semiconductor device according to claim 12 , wherein density of nitrogen included in the inorganic insulating film including silicon oxide is 1×10 19 /cm 3 or more.
17. The method for manufacturing the semiconductor device according to claim 12 , wherein the heat treatment is performed in an air atmosphere or in a nitrogen atmosphere.
18. The method for manufacturing the semiconductor device according to claim 12 , wherein the inorganic insulating film is formed using at least an N 2 O gas.
19. The method for manufacturing the semiconductor device according to claim 12 , wherein the gate insulating layer is an inorganic insulating film including silicon oxide and formed using at least an N 2 O gas.
20. The method for manufacturing the semiconductor device according to claim 12 , wherein the substrate temperature at the time of forming the inorganic insulating film is 100° C. or higher and 300° C. or lower.
21. The method for manufacturing the semiconductor device according to claim 12 , wherein the oxide semiconductor layer includes at least one of indium, gallium, and zinc.
22. The method for manufacturing the semiconductor device according to claim 12 , wherein the oxide semiconductor layer is a thin film represented by InMO 3 (ZnO) m (m>0) wherein M denotes one or more of metal elements selected from Ga, Fe, Ni, Mn, or Co.
23. The method for manufacturing the semiconductor device according to claim 22 , wherein M denotes Ga.
24. The method for manufacturing the semiconductor device according to claim 12 , wherein a wiring is further formed on the inorganic insulating film including silicon oxide after the heat treatment.
25. The method for manufacturing the semiconductor device according to claim 14 , wherein the first amorphous structure is different from the second amorphous structure at least in an atomic arrangement.
26. The method for manufacturing the semiconductor device according to claim 12 , wherein the heat treatment after the inorganic insulating film is performed more than once.
27. A method for manufacturing a semiconductor device comprising the steps of:
forming an oxide semiconductor layer having a first amorphous structure over a substrate having an insulating surface;
forming a source electrode and a drain electrode over the oxide semiconductor layer;
forming an inorganic insulating film including silicon oxide on the oxide semiconductor layer, wherein a substrate temperature is less than or equal to 300° C.; and
performing heat treatment at greater than or equal to 300° C. and less than or equal to a strain point of the substrate after the inorganic insulating film is formed,
wherein the oxide semiconductor layer is not heated at 300° C. or higher during a period after the formation of the oxide semiconductor layer and before the formation of the inorganic insulating film.
28. The method for manufacturing the semiconductor device according to claim 27 , wherein the oxide semiconductor layer subjected to the heat treatment has a second amorphous structure.
29. The method for manufacturing the semiconductor device according to claim 27 , wherein density of hydrogen included in the inorganic insulating film is 5×10 20 /cm 3 or more.
30. The method for manufacturing the semiconductor device according to claim 27 , wherein density of nitrogen included in the inorganic insulating film is 1×10 19 /cm 3 or more.
31. The method for manufacturing the semiconductor device according to claim 27 , wherein the heat treatment is performed in an air atmosphere or in a nitrogen atmosphere.
32. The method for manufacturing the semiconductor device according to claim 27 , wherein the inorganic insulating film is formed using at least an N 2 O gas.
33. The method for manufacturing the semiconductor device according to claim 27 , wherein the substrate temperature at the time of forming the inorganic insulating film is 100° C. or higher and 300° C. or lower.
34. The method for manufacturing the semiconductor device according to claim 27 , wherein the oxide semiconductor layer includes at least one of indium, gallium, and zinc.
35. The method for manufacturing the semiconductor device according to claim 27 , wherein the oxide semiconductor layer is a thin film represented by InMO 3 (ZnO) m (m>0) wherein M denotes one or more of metal elements selected from Ga, Fe, Ni, Mn, or Co.
36. The method for manufacturing the semiconductor device according to claim 35 , wherein M denotes Ga.
37. The method for manufacturing the semiconductor device according to claim 27 , wherein a wiring is further formed on the inorganic insulating film after the heat treatment.
38. The method for manufacturing the semiconductor device according to claim 28 , wherein the first amorphous structure is different from the second amorphous structure at least in an atomic arrangement.
39. The method for manufacturing the semiconductor device according to claim 27 , wherein the heat treatment after the inorganic insulating film is formed is performed more than once.