Buried aperture nitride light-emitting device
View Patent ↗A buried aperture in a nitride light emitting device is described. The aperture is formed in an aperture layer, typically an amorphous or polycrystalline material over an active layer that includes a nitride material. The aperture layer material typically also includes nitride. The aperture layer is etched to create an aperture which is filled with a conducting material by epitaxial regrowth. The amorphous layer is crystallized forming an electrically resistive material during or before regrowth. The conducting aperture in the electrically resistive material is well suited for directing current into a light emitting region of the active layer.
1. A vertical surface-emitting optoelectronic device including a buried current-directing aperture, comprising:
an active layer including an active region for emitting light, the active region including a nitride;
an electrically resistive aperture layer formed over the active region, the electrically resistive layer defining an aperture therein, at least a portion of the electrically resistive layer comprising amorphous aluminum nitride disposed over said active layer and at least a portion of the electrically resistive layer comprising crystallized aluminum nitride disposed over said amorphous aluminum nitride; and,
a second crystalline layer that includes nitride formed over said resistive aperture layer, the second crystalline layer doped to be electrically conductive, at least a portion of the second crystalline layer filling in the aperture in the electrically resistive layer, the second crystalline layer in combination with the electrically resistive aperture layer to direct current into a select active region in the active layer to generate light.
2. The optoelectronic device of claim 1 , further comprising a first distributed Bragg mirror structure formed between the active region and a substrate on which the optoelectronic device is formed, and a second distributed Bragg mirror structure formed over the second layer opposite the electrically resistive aperture layer, such that the active region, aperture, and at least a portion of the second layer are disposed between the first and second distributed Bragg mirror structures, and further such that the optoelectronic device thereby forms a resonant-cavity light-emitting device.
3. The optoelectronic device of claim 1 , wherein the active region and the second layer are both formed from InAlGaN.
4. The optoelectronic device of claim 1 , further comprising an electrical contact formed over the second layer, the electrical contact to provide a current, the aperture in the electrically resistive layer directing the current to the active region where light is emitted.
5. The optoelectronic device of claim 1 , wherein the index of refraction of the electrically resistive layer is lower than the index of refraction of the aperture.
6. The optoelectronic device of claim 1 , wherein the resistive aperture layer is formed directly over the active region.
7. An optoelectronic device to emit light, the optoelectronic device comprising:
a sapphire substrate;
an active layer including a nitride material formed over the sapphire substrate, said active layer including an active region;
an electrically resistive aperture layer formed over the active region, the electrically resistive aperture layer defining an aperture therein, at least a portion of the electrically resistive layer comprising amorphous aluminum nitride disposed over said active layer and at least a portion of the electrically resistive layer comprising crystallized aluminum nitride disposed over said amorphous aluminum nitride; and
a conducting material layer formed over said electrically resistive aperture layer, a portion of the conducting material layer filling the aperture, such that current is directed from the aperture into the active region to thereby cause light generation.
8. The optoelectronic device of claim 7 , further comprising a first distributed Bragg mirror structure formed on one side of the active region and a second distributed Bragg mirror structure formed on one side of the conducting material layer, such that the electrically resistive aperture layer is disposed between and in physical contact with the first and second distributed Bragg mirror structures, and further such that the optoelectronic device thereby forms a resonant-cavity light-emitting device.
9. The optoelectronic device of claim 7 , wherein the active region and the conducting material layer are both formed from InAlGaN.
10. The optoelectronic device of claim 7 , further comprising an electrical contact formed over the conducting material layer, the electrical contact to provide a current, the aperture in the electrically resistive aperture layer directing the current to the active region where light is emitted.
11. The optoelectronic device of claim 7 , wherein the index of refraction of the electrically resistive aperture layer is lower than the index of refraction of the aperture.
12. The optoelectronic device of claim 7 , wherein the electrically resistive aperture layer is formed directly over the active region.
13. A vertical surface-emitting optoelectronic device including a buried current-directing aperture, comprising:
a sapphire substrate;
a first distributed Bragg mirror structure formed over said sapphire substrate;
an indium aluminum gallium nitride (InAlGaN) active layer formed over the first distributed Bragg mirror structure, the active layer including an active region for emitting light;
an electrically resistive aperture layer formed over the active region, the aperture layer having a first resistivity and a first index of refraction, the aperture layer defining an aperture therein directly over the active region, at least a portion of the electrically resistive aperture layer comprising amorphous aluminum nitride (AlN) disposed over said active layer and at least a portion of the electrically resistive layer comprising crystallized aluminum nitride (AlN) disposed over said amorphous aluminum nitride (AlN);
an indium aluminum gallium nitride (InAlGaN) crystalline upper layer formed over said electrically resistive aperture layer, the crystalline upper layer doped to be electrically conductive such that the upper layer has a second resistivity that is substantially lower than the first resistivity, at least a portion of the crystalline upper layer filling in the aperture in the electrically resistive aperture layer such that the filled in aperture has a second index of refraction lower than the first index of refraction, the upper layer material in the aperture together with the electrically resistive aperture layer acting together to both direct current into the active region to generate light and to confine light generated thereby; and
a second distributed Bragg mirror structure formed over the crystalline upper layer to thereby form a resonant-cavity light-emitting device.