Wavelength-converted semiconductor light emitting device

1. A device comprising:

a light emitting structure comprising a light emitting layer that emits first light;

a first luminescent material comprising a ceramic phosphor disposed in a path of light emitted by the light emitting layer; and

a second luminescent material comprising a luminescent semiconductor disposed in a path of light emitted by the light emitting layer, wherein the luminescent semiconductor is configured to absorb the first light and emit light of a different wavelength;

wherein the first luminescent material is disposed between the second luminescent material and the light emitting structure.

2. The device of claim 1 wherein the first luminescent material is bonded to the light emitting structure.

3. The device of claim 2 further comprising a bonding material disposed between the first luminescent material and the light emitting structure.

4. The device of claim 3 wherein the bonding material comprises one of nanoparticles, glass, high index glass, metal oxide, metal fluoride, aluminum oxide, lead oxide, and tungsten oxide.

5. The device of claim 1 wherein the second luminescent material comprises one of III-V material and II-VI material.

6. The device of claim 1 wherein the second luminescent material comprises one of nanoparticles and quantum dots.

7. The device of claim 1 wherein light emitted by the light emitting layer, light emitted by the ceramic phosphor, and light emitted by the luminescent semiconductor are different in color.

8. The device of claim 1 wherein the light emitting structure is mounted on a host substrate, the host substrate comprising one of copper, an alloy of copper, silicon, aluminum nitride, and diamond.

9. The device of claim 1 further comprising a reflector disposed on at least one of the light emitting structure, the first luminescent material, and the second luminescent material.

10. The device of claim 9 wherein the reflector comprises a distributed Bragg reflector.

11. The device of claim 1 wherein the light emitting structure includes a non-semiconductor substrate.

12. A device comprising:

a light emitting structure comprising a light emitting layer and a roughened or textured surface;

a first luminescent material comprising a ceramic phosphor disposed in a path of light emitted by the light emitting layer; and

a second luminescent material disposed in a path of light emitted by the light emitting layer;

wherein the ceramic phosphor is a rigid agglomerate of tightly packed individual phosphor particles that is free of binder material.

13. The device of claim 12 wherein the surface is roughened or textured by one of chemical mechanical polishing, dry etching, and photoelectrochemical etching.

14. The device of claim 12 wherein the light emitting layer comprises III-nitride material.

15. The device of claim 12 wherein at least one surface of the ceramic phosphor is roughened, textured, or shaped.

16. The device of claim 12 wherein the first luminescent material comprises one of (Lu 1-x-y-a-b Y x Gd y ) 3 (Al 1-z Ga z ) 5 O 12 :Ce a Pr b wherein 0<x<1, 0 <y<1, 0<z ≦0.1, 0<a ≦0.2 and 0≦b≦0.1, Lu 3 Al 5 O 12 :Ce 3+ , Y 3 Al 5 O 12 :Ce 3+ , (Sr 1-x-y Ba x Ca y ) 2-z Si 5-a Al a N 8 -a O a :Eu z 2+ wherein 0≦a <5, 0<x≦1, 0≦y ≦1, and 0<z≦1, Sr 2 Si 5 N 8 :Eu 2+ , (Sr 1-a-b Ca b Ba c )Si x N y O z :Eu a 2+ (a =0.002-0.2, b =0.0-0.25, c =0.0-0.25, x =1.5-2.5, y =1.5-2.5, z =1.5-2.5), SrSi 2 N 2 O 2 :Eu 2+ ; (Sr 1-u-v-x Mg u Ca v Ba x )(Ga 2-y-z Al y In z S 4 ):Eu 2+ , SrGa 2 S 4 :Eu 2+ ; Sr 1-x Ba x SiO 4 :Eu 2+ , (Ca 1-x ,Sr x )S:Eu 2+ , CaS:Eu 2+ and SrS:Eu 2+ .