IP Library Granted Patent US 8,274,209
Granted Patent B2
US 8,274,209 · App. 12/725,538 · Granted Sep 25, 2012

Light emitting device having semiconductor laser and fluorescent material and method for manufacturing the same

Assignees: Harison Toshiba Lighting Corp.; Kabushiki Kaisha Toshiba
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Quick Facts
Patent No.
US 8,274,209
App. No.
12/725,538
Granted
Sep 25, 2012
Kind
B2
Abstract

A light emitting device, includes: a casing; a window; a semiconductor laser provided in an enclosed space formed by the casing and the window; and a fluorescent material in a form of any one of a crystal and glass, the fluorescent material being provided in the enclosed space, the fluorescent material absorbing laser light emitted from the semiconductor laser and emitting secondary light having a wavelength different from a wavelength of the laser light, and the secondary light being taken out through the window.

Claims (12)

1. A light emitting device, comprising:

a casing;

a window including a nonreflective layer;

a semiconductor laser provided in an enclosed space formed by the casing and the window; and

a fluorescent material in a form of any one of a crystal and glass, the fluorescent material being provided in the enclosed space,

the fluorescent material absorbing laser light emitted from the semiconductor laser and emitting secondary light having a wavelength different from a wavelength of the laser light, and

the secondary light being taken out through the window.

2. The device according to claim 1 , further comprising a semiconductor base material provided in the enclosed space, the semiconductor base material having a bottom surface and a side surface, at least part of the side surface being a mirror portion,

the semiconductor laser being mounted on the bottom surface of the semiconductor base material, and

the laser light emitted from the semiconductor laser and reflected by the mirror portion being absorbed by the fluorescent material.

3. The device according to claim 2 , the bottom surface of the semiconductor base material is a bottom surface of a recessed portion of the semiconductor base material, the mirror portion is a surface of a total reflection layer provided on a side surface of the recessed portion and reflects the laser light emitted from an end of the semiconductor laser.

4. The device according to claim 1 , wherein the enclosed space is an inert gas atmosphere.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 5, 2010
From: WADA, NAOKI
To: HARISON TOSHIBA LIGHTING CORP.; KABUSHIKI KAISHA TOSHIBA
Reel/Frame 024186/0985 →
Priority Claims (2)
JP 2009-77312 · Mar 26, 2009 · national
JP 2009-179015 · Jul 31, 2009 · national
Continuity (1)
Related Publication 20100246159A1 · Sep 30, 2010