RF front-end with on-chip transmitter/receiver isolation using the hall effect
View Patent ↗An RF front-end with on-chip transmitter/receiver isolation using a gyrator is presented herein. The RF front end is configured to support full-duplex communication and includes a gyrator and a transformer. The gyrator includes a metal plate and an inductor that are configured to isolate the input of a low-noise amplifier (LNA) from the output of a power amplifier (PA) using the Hall effect. The gyrator is further configured to isolate the output of the PA from the input of the LNA. The gyrator is at least partially or fully capable of being integrated on silicon-based substrate.
1. A radio frequency (RF) front-end configured to support full-duplex communication, comprising:
a gyrator comprising a first port coupled to an input of a low-noise amplifier (LNA) and a second port coupled to an output of a power amplifier (PA); and
a transformer comprising a primary winding coupled to an antenna and a secondary winding coupled between the first port and the second port,
wherein the gyrator is configured to isolate the output of the PA from the input of the LNA using the Hall effect.
2. The RF front-end of claim 1 , wherein the primary winding and the secondary winding are inductively coupled.
3. The RF front-end of claim 1 , wherein the gyrator further comprises:
a metal plate; and
an inductor.
4. The RF front-end of claim 3 , wherein the first port is coupled to a first side of the metal plate and the second port is coupled to a second side of the metal plate.
5. The RF front-end of claim 3 , wherein the metal plate and the inductor are implemented on a semiconductor substrate.
6. The RF front-end of claim 3 , wherein the metal plate is implemented in a doped region of a semiconductor substrate.
7. The RF front-end of claim 3 , wherein the inductor is coiled around the metal plate.
8. The RF front-end of claim 7 , wherein the inductor is configured to receive a DC current to produce a magnetic field that passes through the metal plate perpendicular to the metal plate's surface.
9. The RF front-end of claim 8 , wherein the gyrator has a gyration constant substantially proportional to at least one of a magnetic flux density passing through the metal plate and a thickness of the metal plate.
10. The RF front-end of claim 8 , wherein the Hall effect produces a voltage across the metal plate transverse to a current in the metal plate and to the magnetic field.
11. A gyrator, comprising:
a metal plate coupled to a first and second port; and
an inductor coiled around the metal plate,
wherein the inductor is configured to receive a DC current to produce a magnetic field that passes through the metal plate perpendicular to the metal plate's surface,
wherein the gyrator is configured to isolate the first port from the second port using the Hall effect.
12. The gyrator of claim 11 , where the first port is coupled to an input of a low-noise amplifier (LNA) and the second port is coupled to an output of a power amplifier (PA).
13. The gyrator of claim 11 , wherein the first port is coupled to a first side of the metal plate and the second port is coupled to a second side of the metal plate.
14. The gyrator of claim 11 , wherein the metal plate and the inductor are implemented on a semiconductor substrate.
15. The RF front-end of claim 11 , wherein the gyrator has a gyration constant substantially proportional to at least one of a magnetic flux density passing through the metal plate and a thickness of the metal plate.
16. The gyrator of claim 11 , wherein the Hall effect produces a voltage across the metal plate transverse to a current in the metal plate and to the magnetic field.
17. A radio frequency (RF) front-end configured to support full-duplex communication, comprising:
a gyrator comprising a first port coupled to an input of a receiver and a second port coupled to an output of a transmitter; and
a transformer comprising a primary winding configured to receive a signal from a signal transducer and a secondary winding coupled between the first port and the second port,
wherein the gyrator is configured to isolate the output of the transmitter from the input of the receiver using the Hall effect.
18. The RF front-end of claim 17 , wherein the primary winding and the secondary winding are inductively coupled.
19. The RF front-end of claim 17 , wherein the gyrator further comprises:
a metal plate; and
an inductor.
20. The RF front-end of claim 19 , wherein the first port is coupled to a first side of the metal plate and the second port is coupled to a second side of the metal plate.
21. The RF front-end of claim 19 , wherein the metal plate and the inductor are implemented on a semiconductor substrate.
22. The RF front-end of claim 19 , wherein the metal plate is implemented in a doped region of a semiconductor substrate.
23. The RF front-end of claim 19 , wherein the inductor is coiled around the metal plate.
24. The RF front-end of claim 23 , wherein the inductor is configured to receive a DC current to produce a magnetic field that passes through the metal plate perpendicular to the metal plate's surface.
25. The RF front-end of claim 24 , wherein the gyrator has a gyration constant substantially proportional to at least one of a magnetic flux density passing through the metal plate and a thickness of the metal plate.
26. The RF front-end of claim 24 , wherein the Hall effect produces a voltage across the metal plate transverse to a current in the metal plate and to the magnetic field.
27. A radio frequency (RF) front-end configured to support full-duplex communication, comprising:
a gyrator comprising a first port coupled to an antenna and a second port coupled to an output of a power amplifier (PA); and
a transformer comprising a primary winding coupled to an input of a low-noise amplifier (LNA) and a secondary winding coupled between the first port and the second port,
wherein the gyrator is configured to isolate the output of the PA from the input of the LNA using the Hall effect.
28. The RF front-end of claim 27 , wherein the gyrator further comprises:
a metal plate; and
an inductor.
29. The RF front-end of claim 28 , wherein the first port is coupled to a first side of the metal plate and the second port is coupled to a second side of the metal plate.
30. The RF front-end of claim 28 , wherein the metal plate and the inductor are implemented on a semiconductor substrate.
31. The RF front-end of claim 28 , wherein the metal plate is implemented in a doped region of a semiconductor substrate.
32. The RF front-end of claim 28 , wherein the inductor is coiled around the metal plate.
33. The RF front-end of claim 32 , wherein the inductor is configured to receive a DC current to produce a magnetic field that passes through the metal plate perpendicular to the metal plate's surface.