IP Library Granted Patent US 8,262,950
Granted Patent B1
US 8,262,950 · App. 12/727,353 · Granted Sep 11, 2012

Low sintering temperature glass waste forms for sequestering radioactive iodine

Assignee: Sandia Corporation
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Quick Facts
Patent No.
US 8,262,950
App. No.
12/727,353
Granted
Sep 11, 2012
Kind
B1
Abstract

Materials and methods of making low-sintering-temperature glass waste forms that sequester radioactive iodine in a strong and durable structure. First, the iodine is captured by an adsorbant, which forms an iodine-loaded material, e.g., AgI, AgI-zeolite, AgI-mordenite, Ag-silica aerogel, ZnI 2 , CuI, or Bi 5 O 7 I. Next, particles of the iodine-loaded material are mixed with powdered frits of low-sintering-temperature glasses (comprising various oxides of Si, B, Bi, Pb, and Zn), and then sintered at a relatively low temperature, ranging from 425° C. to 550° C. The sintering converts the mixed powders into a solid block of a glassy waste form, having low iodine leaching rates. The vitrified glassy waste form can contain as much as 60 wt % AgI. A preferred glass, having a sintering temperature of 500° C. (below the silver iodide sublimation temperature of 500° C.) was identified that contains oxides of boron, bismuth, and zinc, while containing essentially no lead or silicon.

Claims (37)

1. An iodine-loaded waste form, comprising a glassy body comprised of a mixture of a LST (Low-Sintering-Temperature) glass and an iodine-loaded material;

wherein the LST glass has a sintering temperature that ranges from 425° C. to 550° C.;

wherein the LST glass comprises bismuth oxide and at least one element selected from the group consisting of oxides of Pb, Bi, Zn and B; and

wherein the iodine-loaded material is selected from the group consisting of AgI, AgI-zeolite, Ag-silica aerogel, ZnI 2 , CuI, and a bismuth-oxy-iodine compound having a thermal decomposition temperature greater than the sintering temperature of the LST glass.

2. The iodine-loaded waste form of claim 1 , wherein the iodine comprises radioactive iodine.

3. The iodine-loaded waste form of claim 1 , wherein the LST glass comprises boron and bismuth.

4. The iodine-loaded waste form of claim 3 , wherein the LST glass comprises boron, bismuth, and zinc; and has a sintering temperature of about 500° C.

5. The iodine-loaded waste form of claim 4 , wherein the LST glass comprises 51-55 wt % Bi, 21-22 wt % Zn, and 3-4 wt % B, with the remainder comprising O, and comprising essentially no lead or silicon.

6. The iodine-loaded waste form of claim 5 , wherein the iodine-loaded material comprises AgI-zeolite, and the zeolite comprises Mordenite zeolite.

7. The iodine-loaded waste form of claim 1 , wherein the iodine-loaded material comprises AgI, and the concentration of AgI in the waste form ranges from 20 wt % to 60 wt % AgI.

8. The iodine-loaded waste form of claim 1 , wherein the AgI is homogeneously dissolved throughout the iodine-loaded waste form.

9. The iodine-loaded waste form of claim 1 , wherein the iodine-loaded material comprises AgI-zeolite, and the zeolite comprises Mordenite zeolite.

10. The iodine-loaded waste form of claim 1 , wherein the iodine-loaded material comprises a bismuth-oxy-iodine compound having a thermal decomposition temperature greater than 550° C.

11. The iodine-loaded waste form of claim 10 , wherein the bismuth-oxy-iodine compound comprises Bi 5 O 7 I.

12. The iodine-loaded waste form of claim 1 , wherein the iodine-loaded waste form is surrounded by a protective coating comprising Bi 2 O 3 .

13. The iodine-loaded waste form of claim 1 , wherein the iodine-loaded waste form is surrounded by a protective coating comprising Bi 5 O 7 I.

14. An iodine-loaded waste form, comprising a glassy body comprised of a mixture of a LST (Low-Sintering-Temperature) glass and an iodine-loaded material;

wherein the LST glass comprises 51-55 wt % Bi, 21-22 wt % Zn, and 3-4 wt % B, with the remainder comprising O, and comprising essentially no lead or silicon;

wherein the LST glass has a sintering temperature of about 500° C.;

wherein the iodine-loaded material comprises AgI-zeolite; and

wherein the zeolite comprises Mordenite zeolite.

15. A method of forming a glassy iodine-loaded waste form, comprising:

a) mixing powdered frits of a LST (Low-Sintering-Temperature) glass with particles or powders of an iodine-loaded material, wherein the LST glass comprises bismuth oxide and at least one element selected from the group consisting of oxides of Pb, Bi, Zn and B; and wherein the iodine-loaded material is selected from the group consisting of AgI, AgI-zeolite, Ag-silica aerogel, ZnI 2 , CuI, and a bismuth-oxy-iodine compound having a thermal decomposition temperature greater than the sintering temperature of the LST glass.

b) heating the mixture in an oxidizing environment at a temperature that ranges from 425° C. to 550° C., which sinters and densifies the mixture; and then

c) cooling the sintered mixture.

16. The method of claim 15 , wherein the iodine comprises radioactive iodine.

17. The method of claim 15 , wherein the LST glass comprises boron and bismuth.

18. The method of claim 17 , wherein the LST glass comprises boron, bismuth, and zinc; and has a sintering temperature of about 500° C.

19. The method of claim 15 , wherein the concentration of AgI in the waste form ranges from 20 wt % to 60 wt % AgI.

20. The method of claim 15 , wherein the LST glass comprises 51-55 wt % Bi, 21-22 wt % Zn, and 3-4 wt % B, with the remainder comprising O, and comprising essentially no lead or silicon.

21. The method of claim 20 , wherein the iodine-loaded material comprises AgI-zeolite, and the zeolite comprises Mordenite zeolite.

22. The method of claim 15 , wherein the AgI is homogeneously dissolved throughout the iodine-loaded waste form.

23. The method of claim 15 , wherein the iodine-loaded material comprises AgI-zeolite, and the zeolite comprises Mordenite zeolite.

24. The method of claim 15 , wherein the iodine-loaded material comprises a bismuth-oxy-iodine compound having a thermal decomposition temperature greater than 550° C.

25. The method of claim 15 , wherein the bismuth-oxy-iodine compound comprises Bi 5 O 7 I.

26. The method of claim 15 , further comprising after step c) surrounding the glassy iodine-loaded waste form with a protective coating comprising Bi 2 O 3 .

27. The method of claim 15 , further comprising after step c) surrounding the glassy iodine-loaded waste form with a protective coating comprising Bi 5 O 7 I.

Assignments (2)
CHANGE OF NAME Recorded May 18, 2018
From: SANDIA CORPORATION
To: NATIONAL TECHNOLOGY & ENGINEERING SOLUTIONS OF SANDIA, LLC
Reel/Frame 046198/0094 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 24, 2010
From: NENOFF, TINA M.; GARINO, TERRY J.; KRUMHANSI, JAMES L.; OCKWIG, NATHAN W.
To: SANDIA CORPORATION
Reel/Frame 024156/0588 →
Continuity (3)
Continuation In Part 12617051 · Nov 12, 2009
Provisional Application 61286952 · Dec 16, 2009
Provisional Application 61114113 · Nov 13, 2008