Method of manufacturing nonvolatile semiconductor device
View Patent ↗A semiconductor substrate having a main surface, first and second floating gates formed spaced apart from each other on the main surface of the semiconductor substrate, first and second control gates respectively located on the first and second floating gates, a first insulation film formed on the first control gate, a second insulation film formed on the second control gate to contact the first insulation film, and a gap portion formed at least between the first floating gate and the second floating gate by achieving contact between the first insulation film and the second insulation film are included. With this, a function of a nonvolatile semiconductor device can be ensured and a variation in a threshold voltage of a floating gate can be suppressed.
1. A method of manufacturing a nonvolatile semiconductor device, comprising the steps of:
forming first and second floating gates on a main surface of a semiconductor substrate;
forming first and second control gates respectively on said first and second floating gates; and
forming first and second insulation films on said first and second control gates, respectively, to expand in a lateral direction as the first and second insulation films expand upwardly from upper end portions of said first and second control gates;
forming a third insulation film on a surface of said first and second insulation films to cover a contact portion between said first insulation film and said second insulation film;
forming a gap portion between at least said first floating gate and said second floating gate by said first and second insulation films having an embedding property lower than the embedding property of said third insulation film; and
said third insulation film being formed of a material different from the material of said first and second insulation films, and having moisture resistance capable of suppressing entry of water into said gap portion.