Solid-state imaging device with pixels having first and second optical waveguides with shifted positions, and imaging apparatus including the solid-state imaging device
View Patent ↗An imaging device includes a basic cell having two or more the pixels that share floating diffusion. The imaging device also includes a transistor shared by the two or more pixels in the basic cell and arranged on the outside of the two or more pixels. The imaging device further includes a light receiving unit connected to the floating diffusion shared by the pixels in the basic cell through a transfer gate. In the imaging device, on-chip lenses are arranged substantially at regular intervals. Also, an optical waveguide is formed so that the position thereof in the surface of the solid-state imaging device is located at a position shifted from the center of the light receiving unit to the transistor and in the inside of the light receiving unit and the inside of the on-chip lens.
1. A solid-state imaging device comprising:
a plurality of pixels, each pixel including (i) a light receiving unit to perform photoelectric conversion, (ii) an optical waveguide buried in an insulating layer located above said light receiving unit and provided for introducing light into said optical waveguide, and (iii) an on-chip lens above said optical waveguide;
a basic cell having two or more of said pixels that share a floating diffusion; and
a transistor shared by said two or more pixels in said basic cell and arranged outside of said two or more pixels,
wherein,
said light receiving unit is connected to said floating diffusion shared by said two or more pixels in said basic cell through a transfer gate, and said on-chip lenses of said pixels are arranged substantially at regular intervals,
said optical waveguide includes a first optical waveguide and a second optical waveguide,
said first optical waveguide is formed so that a position thereof in a surface of said solid-state imaging device is located at a position shifted from a center of said light receiving unit to said transistor and within said light receiving unit, and
said second optical waveguide is formed on an upper side of said first optical waveguide so that a position of said second optical waveguide in the surface of said solid-state imaging device is located at a position shifted from the center of said light receiving unit to said transistor and within said light receiving unit.
2. The solid-state imaging device according to claim 1 , wherein said second optical waveguides of the respective pixels are arranged substantially at regular intervals.
3. The solid-state imaging device according to claim 1 , wherein:
said second optical waveguide includes a passivation film formed on a wall surface on a side of said insulating layer, and
a buried layer on said passivation film.
4. The solid-state imaging device according to claim 3 , wherein said passivation film is made of silicon oxynitride.
5. The solid-state imaging device of claim 1 , wherein a center of said first optical waveguide is shifted from the center of said light receiving unit.
6. The solid-state imaging device of claim 1 , wherein a center of said second optical waveguide is shifted from the center of said light receiving unit.
7. An imaging apparatus comprising:
a converging optical section that collects incident light;
a solid-state imaging device that includes a plurality of pixels, each pixel including (i) a light receiving unit to perform photoelectric conversion, (ii) an optical waveguide buried in an insulating layer located above said light receiving unit and provided for introducing light into said optical waveguide, and (iii) an on-chip lens above said optical waveguide; and
a signal processing section that processes a signal obtained by photoelectric conversion in said solid-state imaging device,
wherein,
said solid-state imaging device includes (a) a basic cell having two or more of said pixels that share a floating diffusion, and (b) a transistor shared by said two or more pixels in said basic cell and arranged outside of said two or more pixels,
said light receiving unit is connected to said floating diffusion shared by said two or more pixels in said basic cell through a transfer gate, and said on-chip lenses of said pixels are arranged substantially at regular intervals,
said optical waveguide includes a first optical waveguide and a second optical waveguide,
said first optical waveguide is formed so that a position thereof in a surface of said solid-state imaging device is located at a position shifted from a center of said light receiving unit to said transistor and within said light receiving unit, and
said second optical waveguide is formed on an upper side of said first optical waveguide so that a position of said second optical waveguide in the surface of said solid-state imaging device is located at a position shifted from the center of said light receiving unit to said transistor and within said light receiving unit.
8. The imaging apparatus of claim 7 , wherein a center of said first optical waveguide is shifted from the center of said light receiving unit.
9. The imaging apparatus of claim 7 , wherein a center of said second optical waveguide is shifted from the center of said light receiving unit.