Creation of low-relief texture for a photovoltaic cell
View Patent ↗A novel method is described to create low-relief texture at a light-facing surface or a back surface of a photovoltaic cell. The peak-to-valley height and average peak-to-peak distance of the textured surface is less than about 1 microns, for example less than about 0.8 micron, for example about 0.5 microns or less. In a completed photovoltaic device, average reflectance for light having wavelength between 375 and 1010 nm at a light-facing surface with this texture is 6 percent or less, for example about 5 percent or less, in some instances about 3.5 percent. This texture is produced by forming an optional oxide layer at the surface, lightly buffing the surface, and etching with a crystallographically selective etch. Excellent texture may be produced by etching for as little as twelve minutes or less. Very little silicon, for example about 0.3 mg/cm 2 or less, is lost at the textured surface during this etch.
1. A method to texture a surface of a photovoltaic cell, the method comprising:
buffing a first surface of a silicon body;
etching the buffed first surface; and
fabricating the photovoltaic cell, wherein the first surface is a light-facing surface in the photovoltaic cell,
wherein, after the etching step, at least fifty percent of the first surface has a peak-to-valley height less than about one micron and an average peak-to-peak distance of less than about one micron, and
wherein, in the completed photovoltaic cell, average reflectance for light having wavelength between 375 and 1010 nm at the light-facing surface is no more than about five percent.
2. The method of claim 1 wherein, in the completed photovoltaic cell, the silicon body has a thickness between about 0.5 micron and about 10 microns.
3. The method of claim 1 wherein, in the completed photovoltaic cell, the silicon body has a thickness greater than about 100 microns.
4. The method of claim 1 further comprising, before the buffing step, forming a native oxide on the first surface, wherein the native oxide is not removed before the buffing step.
5. The method of claim 4 wherein thickness of the native oxide does not exceed 100 angstroms.
6. The method of claim 4 wherein, before the step of forming a native oxide on the first surface, relief of the first surface does not exceed about 20 angstroms.
7. The method of claim 4 further comprising:
before the step of forming a native oxide on the first surface, implanting ions in a donor body to define a cleave plane; and
cleaving the silicon body from the donor body at the cleave plane, wherein the first surface is created by cleaving.
8. The method of claim 1 wherein the silicon body is substantially crystalline silicon.
9. The method of claim 8 wherein the silicon body is monocrystalline silicon.
10. The method of claim 1 wherein the etching step includes etching with a crystallographically selective etchant, and wherein etching with the crystallographically selective etchant takes place for no more than twelve minutes.
11. The method of claim 1 wherein, during the etching step, a total of about 0.3 mg/cm2 of silicon is etched.
12. A method to texture a surface of a photovoltaic cell, the method comprising: implanting ions in a silicon body to define a cleave plane;
cleaving a silicon lamina from the silicon body at the cleave plane, creating a cleaved surface;
buffing the cleaved surface;
etching the buffed cleaved surface; and
fabricating the photovoltaic cell, wherein the cleaved surface is a light-facing surface in the photovoltaic cell,
wherein, after the etching step, at least fifty percent of the light-facing surface has a peak-to-valley height less than about one micron and an average peak-to-peak distance of less than about one micron, and
wherein, in the completed photovoltaic cell, average reflectance for light having wavelength between 375 and 1010 nm at the light-facing surface is no more than about five percent.
13. The method of claim 12 wherein the silicon lamina is monocrystalline silicon.
14. The method of claim 12 further comprising, between the cleaving step and the buffing step, forming a native oxide on the cleaved surface, wherein the native oxide is not removed before the buffing step.
15. The method of claim 14 wherein thickness of the native oxide does not exceed 100 angstroms.
16. The method of claim 12 wherein the lamina comprises the base of the photovoltaic cell.
17. The method of claim 12 wherein at least ninety-five percent of the light-facing surface has a peak-to-valley height less than about one micron and an average peak-to-peak distance of less than about one micron.
18. The method of claim 12 wherein, following the etching step, the lamina has a thickness between about 1 micron and about 10 microns.
19. The method of claim 12 wherein the etching step includes etching with a crystallographically selective etchant, and wherein etching with the crystallographically selective etchant takes place for no more than twelve minutes.