Display device with improved sensing mechanism
View Patent ↗A display panel that includes: a substrate, a sensing transistor disposed on the substrate, and a readout transistor connected to the sensing transistor and transmitting a detecting signal is presented. The sensing transistor includes a semiconductor layer disposed on the upper substrate, a source electrode and a drain electrode disposed on the semiconductor layer, and a gate electrode overlapping the semiconductor layer on the source electrode and the drain electrode. Accordingly, in a display device and a manufacturing method thereof, an infrared sensing transistor, a visible light sensing transistor, and a readout transistor are simultaneously formed with a top gate structure such that the number of manufacturing processes and the manufacturing cost may be reduced.
1. A display panel comprising:
a panel including a substrate,
a sensing transistor disposed on the substrate, and
a readout transistor connected to the sensing transistor and transmitting a detecting signal,
wherein the sensing transistor includes a semiconductor layer disposed on the substrate, a source electrode and a drain electrode disposed on the semiconductor layer, and a gate electrode overlapping the semiconductor layer on the source electrode and the drain electrode.
2. The display device of claim 1 , wherein the semiconductor layer of the sensing transistor includes at least one selected from amorphous silicon, amorphous silicon-germanium, and micro-crystalline silicon.
3. The display device of claim 2 , wherein the semiconductor layer is made of a single layer of amorphous silicon-germanium.
4. The display device of claim 2 , wherein
the semiconductor layer includes a lower layer of amorphous silicon and an upper layer of amorphous silicon-germanium.
5. The display device of claim 4 , wherein
the thickness of the lower layer is more than 200 Å, and the thickness of the upper layer is more than 1500 Å.
6. The display device of claim 1 , further comprising a channel passivation layer disposed on the semiconductor layer of the sensing transistor.
7. The display device of claim 1 , wherein
the sensing transistor includes an infrared sensing transistor, and a light blocking film is disposed between the substrate and the semiconductor layer of the infrared sensing transistor.
8. The display device of claim 7 , wherein
the light blocking film is applied with a predetermined voltage.
9. A display device comprising:
a lower panel including a lower substrate and a pixel transistor disposed on the lower substrate; and
an upper panel facing the lower panel, and including an upper substrate, an infrared sensing transistor, a visible light sensing transistor, and a readout transistor,
wherein the infrared sensing transistor includes a first semiconductor layer disposed on the upper substrate, a first source electrode and a first drain electrode disposed on the first semiconductor layer, and a first gate electrode overlapping the first semiconductor layer on the first source electrode and the first drain electrode, and
the readout transistor is connected to the visible light sensing transistor and the infrared sensing transistor, thereby transmitting a detecting signal.
10. The display device of claim 9 , wherein
the visible light sensing transistor includes a second semiconductor layer disposed on the upper substrate, a second source electrode and a second drain electrode disposed on the second semiconductor layer, and a second gate electrode overlapping the second semiconductor layer on the second source electrode and the second drain electrode.
11. The display device of claim 10 , wherein
the second semiconductor layer includes a lower layer of amorphous silicon and an upper layer of amorphous silicon-germanium, and
a portion of the upper layer of the second semiconductor layer is removed between the second source electrode and the second drain electrode.
12. The display device of claim 11 , further comprising
a channel passivation layer disposed on the first semiconductor layer and the second semiconductor layer.
13. The display device of claim 9 , wherein
the visible light sensing transistor includes a second gate electrode disposed on the upper substrate, a second semiconductor layer overlapping the second gate electrode on the second gate electrode, and a second source electrode and a second drain electrode on the second semiconductor layer.
14. The display device of claim 13 , wherein
the second gate electrode has a plurality of openings.
15. The display device of claim 13 , wherein
the second semiconductor layer includes a lower layer of amorphous silicon and an upper layer of amorphous silicon-germanium, and
a portion of the upper layer of the second semiconductor layer is removed between the second source electrode and the second drain electrode.
16. The display device of claim 15 , further comprising
a channel passivation layer disposed on the first semiconductor layer and the second semiconductor layer.
17. The display device of claim 9 , wherein
the visible light sensing transistor includes a second source electrode and a second drain electrode disposed on the upper substrate, a second semiconductor layer disposed between the second source electrode and the second drain electrode, and a second gate electrode overlapping the second semiconductor layer on the second semiconductor layer.
18. The display device of claim 17 , wherein
the second semiconductor layer includes a lower layer of amorphous silicon and an upper layer of amorphous silicon-germanium, and
a portion of the upper layer of the second semiconductor layer is removed between the second source electrode and the second drain electrode.
19. The display device of claim 18 , further comprising
a channel passivation layer disposed on the first semiconductor layer and the second semiconductor layer.
20. The display device of claim 19 , wherein
the second gate electrode has a plurality of openings.
21. The display device of claim 20 , wherein
the second semiconductor layer includes a lower layer of amorphous silicon and an upper layer of amorphous silicon-germanium, and
a portion of the upper layer of the second semiconductor layer is removed between the second source electrode and the second drain electrode.
22. The display device of claim 21 , further comprising
a channel passivation layer disposed on the first semiconductor layer and the second semiconductor layer.
23. The display device of claim 9 , wherein
the visible light sensing transistor includes a second gate electrode disposed on the upper substrate, a second source electrode and a second drain electrode disposed on the second gate electrode, and a second semiconductor layer overlapping the second gate electrode on the second source electrode and the second drain electrode.
24. The display device of claim 9 , wherein
the readout transistor includes a second semiconductor layer disposed on the upper substrate, a second source electrode and a second drain electrode disposed on the second semiconductor layer, and a second gate electrode overlapping the second semiconductor layer on the second source electrode and the third drain electrode.
25. The display device of claim 24 , further comprising
a light blocking film disposed between the upper substrate and the third semiconductor layer.
26. The display device of claim 9 , wherein
the readout transistor includes a second gate electrode disposed on the upper substrate, a second semiconductor layer disposed on the second gate electrode and overlapping the second gate electrode, and a second source electrode and a second drain electrode disposed on the second semiconductor layer.
27. The display device of claim 26 , further comprising
a light blocking film disposed on the second source electrode and the second drain electrode, and overlapping the second semiconductor layer.
28. The display device of claim 9 , wherein
the readout transistor includes a second source electrode and a second drain electrode disposed on the upper substrate, a second semiconductor layer disposed between the second source electrode and the second drain electrode, and a second gate electrode disposed on the second semiconductor layer and overlapping the second semiconductor layer.
29. The display device of claim 28 , further comprising
a light blocking film disposed between the upper substrate and the second semiconductor layer.
30. The display device of claim 9 , wherein
the readout transistor includes a second gate electrode disposed on the upper substrate, a second source electrode and a second drain electrode disposed on the second gate electrode, and a second semiconductor layer disposed on the second source electrode and the second drain electrode and overlapping the second gate electrode.
31. The display device of claim 30 , further comprising
a light blocking film disposed on the second semiconductor layer, and overlapping the second semiconductor layer.