IP Library Granted Patent US 8,339,766
Granted Patent B2
US 8,339,766 · App. 12/731,398 · Granted Dec 25, 2012

Method of manufacturing thin film capacitor and thin film capacitor

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Quick Facts
Patent No.
US 8,339,766
App. No.
12/731,398
Granted
Dec 25, 2012
Kind
B2
Abstract

A method of manufacturing a thin film capacitor, having: a base electrode; dielectric layers consecutively deposited on the base electrode; an internal electrode deposited between the dielectric layers; an upper electrode deposited opposite the base electrode with the dielectric layers and the internal electrode being interposed therebetween; and a cover layer deposited on the upper electrode, has depositing an upper electrode layer which is to be the upper electrode, and a cover film which is to be the cover layer on the unsintered dielectric film which is to be the dielectric layer, to fabricate a lamination component, and sintering the lamination component.

Claims (5)

1. A thin film capacitor, comprising a base electrode, a dielectric layer deposited on the base electrode, an upper electrode deposited opposite the base electrode with the dielectric layer being interposed therebetween, and a cover layer deposited on the upper electrode,

wherein the thin film capacitor is formed by sintering a lamination component; and

wherein the lamination component is formed by depositing an upper electrode layer which is to be the upper electrode and a cover film which is to be the cover layer on an unsintered dielectric film which is to be the dielectric layer.

2. The thin film capacitor according to claim 1 , wherein the cover layer comprises material of the same composition as the dielectric layer.

3. The thin film capacitor according to claim 1 , further comprising a terminal electrode, which is provided after patterning the sintered lamination component.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 14, 2010
From: YANO, YOSHIHIKO; OIKAWA, YASUNOBU
To: TDK CORPORATION
Reel/Frame 024391/0587 →