IP Library Granted Patent US 8,217,716
Granted Patent B2
US 8,217,716 · App. 12/732,383 · Granted Jul 10, 2012

Bias circuit, high-power amplifier, and portable information terminal

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Quick Facts
Patent No.
US 8,217,716
App. No.
12/732,383
Granted
Jul 10, 2012
Kind
B2
Abstract

To provide a bias circuit for gain control that can reduce gain variation at low-power output, facilitate setting of output power, and is unlikely to be affected by variation in element values and variations among products. Use in an HPA having three bias circuits serially-connected is assumed. Current of the third bias circuit is varied with a square-law characteristic. The square-law characteristic is amplified by a buffer amplifier including a linear amplifier and a peripheral circuit thereof. Output current of the third bias circuit varies depending on a current drivability coefficient of the diode-connected FET branched from the connection point between a constant current source and the linear amplifier. The output current of the third bias circuit is controlled by providing a circuit that draws a certain amount of current from the current flowing in the FET.

Claims (12)

1. A bias circuit comprising:

a linear amplifier that amplifies current input from an input end; and

a resistor coupled to a connection point between the input end and the linear amplifier and grounded via a diode-connected first FET, wherein

the linear amplifier, together with a peripheral circuit thereof, comprises a buffer amplifier including a threshold voltage offset, and the output of the buffer amplifier is coupled to a gate terminal of a second FET,

wherein the second FET has an RF amplification function that amplifies and outputs high frequency signals that are input to the gate terminal of the second FET, and

an adjustment circuit coupled to the connection point of the resistor and the first FET that draws current proportional to the input current flowing in the first FET.

2. The bias circuit according to claim 1 , wherein influence of undesired components of the bias circuit is excluded by setting current drivability coefficients of the first FET and the second FET.

3. A high-power amplifier comprising a plurality of serially-connected bias circuits, wherein the bias circuit according to claim 2 is used as the last-stage bias circuit of the serially-connected bias circuits.

4. The bias circuit according to claim 1 , wherein a current mirror circuit draws part of current flowing in the first FET.

5. A high-power amplifier comprising a plurality of serially-connected bias circuits, wherein the bias circuit according to claim 4 is used as the last-stage bias circuit of the serially-connected bias circuits.

6. A high-power amplifier comprising a plurality of serially-connected bias circuits, wherein the bias circuit according to claim 1 is used as the last-stage bias circuit of the serially-connected bias circuits.

7. A portable information terminal that uses the high-power amplifier according to claim 6 .

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 21, 2012
From: RENESAS ELECTRONICS CORPORATION
To: MURATA MANUFACTURING CO., LTD.
Reel/Frame 027898/0663 →
MERGER AND CHANGE OF NAME Recorded Jul 29, 2010
From: RENESAS TECHNOLOGY CORP.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 024755/0338 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 26, 2010
From: TANAKA, SATOSHI; TAKAHASHI, KYOICHI; HASE, MASATOSHI; ITO, MASAHIRO
To: RENESAS TECHNOLOGY CORP.
Reel/Frame 024144/0220 →