Semiconductor light emitting device
Provided is a semiconductor light emitting device which includes a number of hexagon-shaped semiconductor light emitting elements formed two-dimensionally, and in which the positive electrodes and the negative electrodes are formed on its light outputting surface side lest the light outputting efficiency should decrease. A mask 11 for selective growth is formed on a substrate 1 for growth, and an AlN buffer layer 2 is formed in regions from each of which a part of the mask 11 for selective growth is removed. An undoped GaN layer 3 , an n-type GaN layer 4 , an active layer 5 and a p-type GaN layer 6 are sequentially stacked on the AlN buffer layer 2 . An isolation groove A for isolating the elements from one another is formed. A p-electrode 8 and an n-electrode 7 of each semiconductor light emitting element D are formed on its hexagon-shaped light outputting surface side, and the p-electrodes or n-electrodes of each two neighboring semiconductor light emitting elements are arranged adjacent to each other with the isolation groove A in between.
1. A semiconductor light emitting device in which a plurality of hexagon-shaped semiconductor light emitting elements are formed two-dimensionally on a substrate, the semiconductor light emitting device comprising:
in each semiconductor light emitting element, a positive electrode and a negative electrode are formed on a hexagon-shaped light outputting surface side; and
a positive electrode of one of each two neighboring ones of the semiconductor light emitting elements and a negative electrode of the other element are arranged adjacent to each other with an isolation groove in between, the isolation groove isolating the semiconductor light emitting elements from one another.
2. The semiconductor light emitting device according to claim 1 , wherein a metal electrode for wire bonding is continuously formed stretching across front surfaces respectively of at least two adjacent ones of the semiconductor light emitting elements, the metal electrode configured to supply electric power to the semiconductor light emitting device.
3. The semiconductor light emitting device according to claim 2 , wherein the metal electrode is continuously formed stretching across the top surface and a side surface of each of the semiconductor light emitting elements.
4. The semiconductor light emitting device according to claim 1 , wherein, in each semiconductor light emitting element, the positive electrode and the negative electrode are each formed in a shape using one side of, or two sides meeting at a vertex of, the hexagon, and the positive electrode and the negative electrode are arranged opposed to each other.
5. The semiconductor light emitting device according to claim 4 , wherein at least one of the positive electrode and the negative electrode of each semiconductor light emitting element is formed in a shape of a rectangle including long sides which are parallel to the one side of the hexagon defining the hexagon shape of the element.
6. The semiconductor light emitting device according to claim 4 , wherein at least one of the positive electrode and the negative electrode of each semiconductor light emitting element is formed in a V-shape using two sides parallel respectively to the two sides meeting at the vertex of the hexagon defining the hexagon shape of the element.
7. The semiconductor light emitting device according to claim 4 , wherein at least one of the positive electrode and the negative electrode of each semiconductor light emitting element is formed in a shape of any one of a sector and a triangle using two sides parallel respectively to the two sides meeting at the vertex of the hexagon defining the hexagon shape of the element.
8. The semiconductor light emitting device according to any one of claims 5 , 6 , and 7 , wherein a metal electrode for wire bonding is continuously formed stretching across front surfaces respectively of at least two adjacent ones of the semiconductor light emitting elements, the metal electrode configured to supply electric power to the semiconductor light emitting device.
9. The semiconductor light emitting device according to claim 8 , wherein the metal electrode is continuously formed stretching across the top surface and a side surface of each of the semiconductor light emitting elements.
10. The semiconductor light emitting device according to claim 4 , wherein a metal electrode for wire bonding is continuously formed stretching across front surfaces respectively of at least two adjacent ones of the semiconductor light emitting elements, the metal electrode configured to supply electric power to the semiconductor light emitting device.
11. The semiconductor light emitting device according to claim 10 , wherein the metal electrode is continuously formed stretching across the top surface and a side surface of each of the semiconductor light emitting elements.