IP Library Granted Patent US 8,299,477
Granted Patent B2
US 8,299,477 · App. 12/738,051 · Granted Oct 30, 2012

Light emitting device and method for fabricating the same

Assignee: LG Innotek Co., Ltd.
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Quick Facts
Patent No.
US 8,299,477
App. No.
12/738,051
Granted
Oct 30, 2012
Kind
B2
Abstract

A light emitting device that includes a conductive substrate, an insulating layer on the conductive substrate, a plurality of light emitting device cells on the insulating layer, a connection layer electrically interconnecting the light emitting device cells, a first contact section electrically connecting the conductive substrate with at least one light emitting device cell, and a second contact section on the at least one light emitting device cell.

Claims (16)

1. A light emitting device, comprising:

a metallic layer;

a plurality of light emitting device cells arranged above the metallic layer, and including a first conductive semiconductor layer, an active layer below the first conductive semiconductor layer, and a second conductive semiconductor layer below the active layer;

a connection section connecting the light emitting device cells to each other in series;

an insulating layer provided between the metallic layer and the light emitting device cells, and including a first insulating layer electrically insulating the light emitting device cells from each other and a second insulating layer insulating the connection section from the metallic layer;

electrodes provided above the first conductive semiconductor layer of the light emitting device cells;

a contact section connecting the second conductive semiconductor layer of the light emitting device cells to the metallic layer through a contact hole formed in the second insulting layer, and forming a first node; and

a pad provided on at least one of the electrodes, and forming a second node,

wherein each light emitting device cell is directly physically connected with the connection section through a hole formed in the first insulating layer, and

wherein the electrodes are not in direct physical contact with the connection section.

2. The light emitting device of claim 1 , further comprising a seed layer or a bond metallic layer interposed between the metallic layer and the second insulating layer.

3. The light emitting device of claim 1 ,

wherein the first and second nodes are placed such that the light emitting device cells provided in a first array block are identical to the light emitting device cells provided in a second array block in number.

4. The light emitting device of claim 1 , wherein the electrode includes a transparent electrode.

5. The light emitting device of claim 1 , further comprising a transparent electrode layer on the first conductive semiconductor layer of the light emitting device cell.

6. The light emitting device of claim 1 , wherein an AC power source and a current limiter passive element, which are connected to each other in series, are connected to the first and second nodes.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 4, 2024
From: SUZHOU LEKIN SEMICONDUCTOR CO., LTD.
To: FAIRLIGHT INNOVATIONS, LLC
Reel/Frame 068839/0745 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 25, 2021
From: LG INNOTEK CO., LTD.
To: SUZHOU LEKIN SEMICONDUCTOR CO., LTD.
Reel/Frame 056366/0335 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 20, 2010
From: KIM, GEUN HO; SONG, YONG SEON; WON, YU HO
To: LG INNOTEK CO., LTD.
Reel/Frame 024260/0656 →
Priority Claims (1)
KR 10-2007-0103561 · Oct 15, 2007 · national
Continuity (1)
Related Publication 20100219432A1 · Sep 2, 2010