Spin valve element and method of manufacturing same

1. A spin valve element, comprising:

a plurality of serially or parallelly-connected magnetic element groups, wherein each magnetic element group is formed, at least in part, by connecting in parallel a plurality of magnetic elements, and wherein each magnetic element includes an intermediate layer and a pair of ferromagnetic layers sandwiching the intermediate layer; and

a single porous layer having a plurality of minute holes, wherein each of the plurality of magnetic elements is disposed within one of the plurality of minute holes of the single porous layer, and wherein the plurality of magnetic elements is connected in parallel outside of the minute holes;

wherein:

each of the pair of ferromagnetic layers has a predetermined thickness; and

a ratio of a total number of serial connections of the magnetic elements to a total number of parallel connections of the magnetic elements is:

in a range of 1:100 to 1:30,000 if the spin valve element utilizes a tunneling magneto-resistance (TMR) effect; and

in a range of 1:1 to 10:1 if the spin valve element utilizes a giant magneto-resistance (GMR) effect.

2. The spin valve element of claim 1 , wherein the plurality of magnetic elements are placed in such proximity that oscillation signals are configured to be generated if the plurality of magnetic elements are mutually synchronized.

3. The spin valve element of claim 1 , wherein the single porous layer is formed by nanoimprinting.

4. The spin valve element of claim 1 , wherein the intermediate layer is an insulating layer or an electrically-conductive nonmagnetic layer.

5. The spin valve element of claim 1 , wherein the serial connections and the parallel connections are configured such that the spin valve element has an impedance of 500.

6. The spin valve element of claim 1 , wherein each of the pair of ferromagnetic layers is the same material.

7. The spin valve element of claim 6 , wherein the pair of ferromagnetic layers comprises a fixed layer and a free layer, and wherein the predetermined thickness of the fixed layer is greater than the predetermined thickness of the free layer.

8. The spin valve element of claim 1 , wherein the plurality of serially or parallelly-connected magnetic element groups are serially-connected magnetic element groups.

9. The spin valve element of claim 1 , wherein the plurality of serially or parallelly-connected magnetic element groups are parallelly-connected magnetic element groups.

10. The spin valve element of claim 1 , wherein the plurality of serially or parallelly-connected magnetic element groups are formed on the same substrate.

11. A spin valve element manufacturing method of manufacturing the spin valve element according to claim 1 , comprising a step of forming the single porous layer by nanoimprinting.

12. A spin valve element manufacturing method of manufacturing the spin valve element according to claim 1 , comprising a step of forming the single porous layer by either:

a step of performing anodic oxidation of an aluminum thin film; or

a step of causing self-organization of a resin film.

13. A spin valve element, comprising:

a plurality of parallelly-connected magnetic element groups, wherein each magnetic element group is formed, at least in part, by connecting in series a plurality of magnetic elements, and wherein each magnetic element includes an intermediate layer and a pair of ferromagnetic layers sandwiching the intermediate layer; and

a single porous layer having a plurality of minute holes, wherein each of the plurality of magnetic element groups is disposed within one of the plurality of minute holes of the single porous layer, and wherein the plurality of magnetic element groups is connected in parallel outside of the minute holes;

wherein:

each of the pair of ferromagnetic layers have a predetermined thickness; and

a ratio of a total number of serial connections of the magnetic elements to a total number of parallel connections of the magnetic elements is:

in a range of 1:100 to 1:30,000 if the spin valve element utilizes a tunneling magneto-resistance (TMR) effect; and

in a range of 1:1 to 10:1 if the spin valve element utilizes a giant magneto-resistance (GMR) effect.

14. The spin valve element of claim 13 , wherein the plurality of magnetic elements are placed in such proximity that oscillation signals are configured to be generated if the plurality of magnetic elements are mutually synchronized.

15. A spin valve element group, comprising a plurality of the spin valve elements according to claim 13 , wherein the spin valve elements are connected in series.

16. The spin valve element group of claim 15 , wherein the single porous layer is formed by nanoimprinting.

17. The spin valve element group of claim 15 , wherein the spin valve elements are formed on the same substrate.

18. The spin valve element of claim 13 , wherein the intermediate layer is an insulating layer or an electrically-conductive nonmagnetic layer.

19. The spin valve element of claim 13 , wherein the serial connections and the parallel connections are configured such that the spin valve element has an impedance of 500.

20. The spin valve element of claim 13 , wherein each of the pair of ferromagnetic layers is the same material.

21. The spin valve element of claim 20 , wherein the pair of ferromagnetic layers comprises a fixed layer and a free layer, and wherein the predetermined thickness of the fixed layer is greater than the predetermined thickness of the free layer.

22. A spin valve element manufacturing method of manufacturing the spin valve element of claim 13 , comprising a step of forming the single porous layer by nanoimprinting.

23. A spin valve element manufacturing method of manufacturing the spin valve element according to claim 13 , comprising a step of forming the single porous layer by either:

a step of performing anodic oxidation of an aluminum thin film; or

a step of causing self-organization of a resin film.