IP Library Granted Patent US 9,064,737
Granted Patent B2
US 9,064,737 · App. 12/741,737 · Granted Jun 23, 2015

Power semiconductor module

Inventors: Joerg Dorn (Buttenheim, DE); Thomas Kuebel (Erlangen, DE)
Assignee: Siemens Aktiengesellschaft
H01L25/117H01L23/4012H01L25/071H01L2924/0002
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,064,737
App. No.
12/741,737
Granted
Jun 23, 2015
Kind
B2
Abstract

A power semiconductor module includes at least two power semiconductor units that are interconnected and that have controllable semiconductors. Each semiconductor unit is associated with a cooling plate to which the semiconductors are connected in a heat-conducting manner. The object is to provide a semiconductor module that is compact and cost-effective and at the same time explosion-proof. The power semiconductor module of the invention has a module housing which houses the power semiconductor units. The cooling plates form at least part of the module housing.

Claims (12)

1. A power semiconductor module, comprising:

a module housing having a top side and an underside;

at least two power semiconductor units disposed in said module housing, each of said at least two power semiconductor units having a unit housing and drivable power semiconductors disposed in said unit housing, and said unit housings being connected to one another;

each power semiconductor unit of said power semiconductor units having a respective cooling plate thermally conductively connected to said drivable power semiconductors;

said cooling plates of said power semiconductor units forming said top side of said module housing and said underside of said module housing.

2. The power semiconductor module according to claim 1 , wherein said power semiconductor units are disposed facing one another.

3. The power semiconductor module according to claim 1 , wherein said module housing has sidewalls extending between said cooling plates and being composed of an insulating material.

4. The power semiconductor module according to claim 3 , which comprises connection terminals for connecting said power semiconductor units, said connection terminals extending through the sidewalls.

5. The power semiconductor module according to claim 1 , wherein said power semiconductors are connected to one another by way of bonding wires.

6. The power semiconductor module according to claim 1 , which comprises at least one holding ring fixedly connected to a respective said cooling plate, said holding ring having a sidewall section projecting from said cooling plate and at least partly enclosing a respective said power semiconductor unit.

7. A current converter valve branch, comprising a series circuit of a plurality of power semiconductor modules according to claim 1 .

8. A current converter, comprising a bridge circuit formed of a plurality of converter valve branches each formed of a series circuit of a plurality of power semiconductor modules according to claim 1 .

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 15, 2021
From: SIEMENS AKTIENGESELLSCHAFT
To: SIEMENS ENERGY GLOBAL GMBH & CO. KG
Reel/Frame 055950/0027 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 29, 2012
From: DORN, JOERG; KUEBEL, THOMAS
To: SIEMENS AKTIENGESELLSCHAFT
Reel/Frame 027956/0521 →
Continuity (1)
Related Publication 20100265744A1 · Oct 21, 2010