THIN FILM FORMING APPARATUS AND THIN FILM FORMING METHOD
In a film forming method using gas cooling, a decrease in a film formation rate and an excessive load on a vacuum pump due to the introduction of the gas are avoided while achieving an adequate cooling effect. A thin film forming apparatus of the present invention includes: a cooling body 10 provided close to a rear surface of a substrate 7 in a thin film forming region 14 ; a gas introducing unit configured to for introduce a gas to between the cooling body 10 and the rear surface of the substrate 7 ; and a gap maintaining unit 11 contacting the rear surface of the substrate 7 for dividing the thin film forming region 14 into a first thin film forming region 14 a and a second thin film forming region 14 b where a film forming speed is lower than that in the first thin film forming region 14 a , and maintaining a gap between the cooling body 10 and the substrate 7 . In addition, a condition for the cooling is set such that an amount of cooling in the first thin film forming region 14 a is larger than an amount of cooling in the second thin film forming region 14 b.
1 . A thin film forming apparatus configured to form a thin film in vacuum on a front surface of a band-shaped substrate having the front surface and a rear surface,
the thin film forming apparatus comprising:
a transfer mechanism configured to transfer the substrate;
a thin film forming unit configured to form the thin film on the front surface of the substrate in a thin film forming region, the substrate being transferred linearly;
a cooling body provided close to the rear surface of the substrate in the thin film forming region and cooled down by a cooling medium;
a gas introducing unit configured to introduce a gas to between the cooling body and the rear surface of the substrate to cool down the substrate;
a gap maintaining unit contacting the rear surface of the substrate for dividing the thin film forming region into a first thin film forming region and a second thin film forming region where a film forming speed is lower than that in the first thin film forming region, and maintaining a gap between the cooling body and the substrate; and
a vacuum container configured to store the transfer mechanism, the thin film forming unit, the cooling body, the gas introducing unit, and the gap maintaining unit, wherein
in cooling of the substrate by the gas introducing unit, a condition for the cooling is set such that an amount of cooling of the substrate in the first thin film forming region is larger than an amount of cooling of the substrate in the second thin film forming region.
2 . The thin film forming apparatus according to claim 1 , wherein the condition for the cooling is set such that an introduction amount of the gas in the first thin film forming region is larger than an introduction amount of the gas in the second thin film forming region.
3 . The thin film forming apparatus according to claim 1 , wherein the condition for the cooling is set such that the gap between the cooling body and the substrate in the first thin film forming region is narrower than the gap between the cooling body and the substrate in the second thin film forming region.
4 . The thin film forming apparatus according to claim 1 , wherein the gap maintaining unit is a roller.
5 . A thin film forming method using a thin film forming apparatus configured to form a thin film in vacuum on a front surface of a band-shaped substrate having the front surface and a rear surface,
the thin film forming apparatus comprising:
a transfer mechanism configured to transfer the substrate;
a thin film forming unit configured to form the thin film on the front surface of the substrate in a thin film forming region, the substrate being transferred linearly;
a cooling body provided close to the rear surface of the substrate in the thin film forming region and cooled down by a cooling medium;
a gas introducing unit configured to introduce a gas to between the cooling body and the rear surface of the substrate to cool down the substrate;
a gap maintaining unit contacting the rear surface of the substrate for dividing the thin film forming region into a first thin film forming region and a second thin film forming region where a film forming speed is lower than that in the first thin film forming region, and maintaining a gap between the cooling body and the substrate; and
a vacuum container configured to store the transfer mechanism, the thin film forming unit, the cooling body, the gas introducing unit, and the gap maintaining unit,
the method comprising the step of:
forming the thin film on the front surface of the substrate under a condition in which in cooling of the substrate by the gas introducing unit, an amount of cooling of the substrate in the first thin film forming region is larger than an amount of cooling of the substrate in the second thin film forming region.
6 . The thin film forming method according to claim 4 , wherein the condition is adjusted such that an introduction amount of the gas in the first thin film forming region is larger than an introduction amount of the gas in the second thin film forming region.
7 . The thin film forming method according to claim 4 , wherein the condition is adjusted such that the gap between the cooling body and the substrate in the first thin film forming region is narrower than the gap between the cooling body and the substrate in the second thin film forming region.
8 . The thin film forming method according to claim 4 , wherein the condition is adjusted such that the gas introduced in the first thin film forming region is formed by molecules each having a lower molecular weight than each of molecules of the gas introduced in the second thin film forming region.