Radiation receiver and method of producing a radiation receiver
A radiation receiver has a semiconductor body including a first active region and a second active region, which are provided in each case for detecting radiation. The first active region and the second active region are spaced vertically from one another. A tunnel region is arranged between the first active region and the second active region. The tunnel region is connected electrically conductively with a land, which is provided between the first active region and the second active region for external electrical contacting of the semiconductor body. A method of producing a radiation receiver is additionally indicated.
1. A radiation receiver comprising:
a first active region and a second active region disposed in a semiconductor body, the second active region spaced vertically from the first active region, the first and second active regions each provided for the detection of radiation, wherein the first active region and the second active region are each arranged between a barrier layer and a counter barrier layer, wherein the barrier layer and the counter barrier layer have mutually different conduction types;
a tunnel region arranged between the first active region and the second active region, wherein the tunnel region comprises a first tunnel layer and a second tunnel layer having mutually different conduction types, wherein the first tunnel layer and the second tunnel layer project in lateral direction beyond the first active region; and
a contact between the first active region and the second active region for external electrical contacting of the semiconductor body the tunnel region being electrically connected with the contact, wherein the contact is arranged directly on a portion of the tunnel region that projects laterally beyond the first active region.
2. The radiation receiver according to claim 1 , further comprising:
a third active region on a side of the second active region remote from the first active region;
a further tunnel region arranged between the second active region and the third active region; and
a further contact electrically conductively connected with the further tunnel region.
3. The radiation receiver according to claim 1 , wherein the tunnel region comprises two tunnel layers with mutually different conduction types.
4. The radiation receiver according to claim 1 , wherein a main radiation entrance face of the semiconductor body is of stepped construction and one step face of the main radiation entrance face is associated with each active region, a step face disposed between two adjacent active regions.
5. The radiation receiver according to claim 4 , wherein, in plan view, at least two step faces are arranged in areal fashion side by side.
6. The radiation receiver according to claim 4 , wherein, in plan view, at least two step faces engage in one another in places.
7. The radiation receiver according to claim 4 , wherein is arranged upstream of the second active region in a main radiation entrance direction, a first step face associated with the first active region being of continuous construction.
8. The radiation receiver according to claim 2 , wherein the first, second and third active regions each comprise a detection maximum at a peak wavelength and the peak wavelengths are spaced from one another, the peak wavelengths increasing in the main radiation entrance direction.
9. The radiation receiver according to claim 2 , wherein the first, second and third active regions each comprise a detection maximum at a peak wavelength and the peak wavelengths are spaced from one another, at least one active region having a lower peak wavelength than an active region arranged upstream in the main radiation entrance direction.
10. The radiation receiver according to claim 1 , further comprising a passive region arranged upstream of at least one active region the passive region provided for shaping a short wave edge of a spectral detection range associated with the at least one active region.
11. The radiation receiver according to claim 1 , wherein at least one of the active regions contains a III-V compound semiconductor material.
12. The radiation receiver according to claim 1 , which is provided for operation in a color sensor, the color sensor comprising a plurality of color channels.
13. A method of producing a radiation receiver, the method comprising:
providing a semiconductor body comprising a first active region and a second active region, each active region provided for detecting radiation, wherein the first active region and the second active region are each arranged between a barrier layer and a counter barrier layer that have mutually different conduction types, the semiconductor body further comprising a tunnel region arranged between the first active region and the second active region, wherein the tunnel region comprises a first tunnel layer and a second tunnel layer having mutually different conduction types, wherein the first tunnel layer and the second tunnel layer project in lateral direction beyond the first active region;
exposing the tunnel region the first active region being removed in places; and
forming a contact directly on the tunnel region.
14. The method according to claim 13 , wherein providing the semiconductor body comprises providing a semiconductor body that is deposited epitaxially on a growth substrate.
15. The radiation receiver according to claim 1 , wherein the first and second active regions each comprise a detection maximum at a peak wavelength and the peak wavelengths are spaced from one another, the peak wavelengths increasing in the main radiation entrance direction.