Multilayer thin-film photoelectric converter and its manufacturing method
View Patent ↗A thin film photoelectric converter including a transparent conductive layer, a laser light absorption layer, a back electrode layer, a semiconductor photoelectric conversion layer and a transparent electrode layer stacked on a translucent substrate. The laser light absorption layer is parted into regions by first kind parting line grooves, and the photoelectric conversion layer is parted into regions by third kind parting line grooves penetrating the laser light absorption layer, the rear surface electrode layer and the photoelectric conversion layer. The transparent electrode layer is parted into regions by fourth kind parting line grooves penetrating the laser light absorption layer, the rear surface electrode layer, the photoelectric conversion layer and the transparent electrode layer. A receiving side transparent electrode region of one cell is electrically connected to a back electrode region of an adjacent cell through the first kind groove, the transparent conductive layer and the third kind groove.
1. An integrated-type thin film photoelectric converter for photoelectrically converting incident light from a light receiving side, comprising:
a transparent conductive layer, a laser light absorption layer, a back electrode layer, a semiconductor photoelectric conversion layer, and a light receiving side transparent electrode layer, sequentially stacked in this order on a transparent substrate, such that the light receiving side transparent electrode layer is positioned on the light receiving side of the photoelectric converter, wherein
the transparent conductive layer, the laser light absorption layer, the back electrode layer, the semiconductor photoelectric conversion layer, and the light receiving side transparent electrode layer are parted into a plurality of strip photoelectric conversion cell regions, and those plurality of strip photoelectric conversion cell regions are electrically connected in series,
the laser light absorption layer is parted into a plurality of strip regions by a plurality of first kind parting line grooves that penetrate only the laser light absorption layer and do not penetrate the back electrode layer,
the back electrode layer includes a light reflecting metal layer, and the back electrode layer is parted into a plurality of strip back electrode regions by a plurality of second kind parting line grooves, wherein the second kind parting line grooves are parallel to the first kind parting line grooves and penetrate the transparent conductive layer, the laser light absorption layer and the back electrode layer,
the semiconductor photoelectric conversion layer is parted into a plurality of strip photoelectric conversion regions by a plurality of third kind parting line grooves, wherein the third kind parting line grooves are parallel to the first kind parting line grooves and penetrate the laser light absorption layer, the back electrode layer and the semiconductor photoelectric conversion layer,
the light receiving side transparent electrode layer is parted into a plurality of strip light receiving side transparent electrode regions by a plurality of fourth kind parting line grooves, wherein the fourth kind parting line grooves are parallel to the first kind parting line grooves and penetrate the laser light absorption layer, the back electrode layer, the semiconductor photoelectric conversion layer and the light receiving side transparent electrode layer, and
between the mutually adjacent photoelectric conversion cells, the back electrode region of one cell is electrically connected to the light receiving side transparent electrode region of another cell through one of the first kind parting line grooves, the transparent conductive layer and one of the third kind parting line grooves, whereby those photoelectric conversion cells are electrically connected in series.
2. An integrated-type thin film photoelectric converter for photoelectrically converting incident light from a light receiving side, comprising: a transparent conductive layer, a laser light absorption layer, a back electrode layer, a semiconductor photoelectric conversion layer, and a light receiving side transparent electrode layer, sequentially stacked in this order on a transparent substrate, such that the light receiving side transparent electrode layer is positioned on the light receiving side of the photoelectric converter, wherein
the transparent conductive layer, the laser light absorption layer, the back electrode layer, the semiconductor photoelectric conversion layer, and the light receiving side transparent electrode layer are parted into a plurality of strip photoelectric conversion cell regions, and those plurality of strip photoelectric conversion cell regions are electrically connected in series,
the transparent conductive layer is parted into a plurality of strip light receiving side transparent conductive regions by a plurality of fifth kind parting line grooves, wherein the fifth kind parting line grooves penetrate the transparent conductive layer,
the laser light absorption layer is parted into a plurality of strip laser light absorption regions by a plurality of first kind parting line grooves, wherein the first kind parting line grooves are parallel to the fifth kind parting line grooves and penetrate only the laser light absorption layer and do not penetrate the back electrode layer,
the back electrode layer includes a light reflecting metal layer, and the back electrode layer is parted into a plurality of strip back electrode regions by a plurality of sixth kind parting line grooves, wherein the sixth kind parting line grooves are parallel to the first kind parting line grooves and penetrate the laser light absorption layer and the back electrode layer,
the semiconductor photoelectric conversion layer is parted into a plurality of strip photoelectric conversion regions by a plurality of third kind parting line grooves, wherein the third kind parting line grooves are parallel to the first kind parting line grooves and penetrate the laser light absorption layer, the back electrode layer and the semiconductor photoelectric conversion layer,
the light receiving side transparent electrode layer is parted into a plurality of strip light receiving side transparent electrode regions by a plurality of fourth kind parting line grooves, wherein the fourth kind parting line grooves are parallel to the first kind parting line grooves, and penetrate the laser light absorption layer, the back electrode layer, the semiconductor photoelectric conversion layer and the light receiving side transparent electrode layer, and
between the mutually adjacent photoelectric conversion cells, a back electrode region of one cell is electrically connected to a light receiving side transparent electrode region of another cell through the first kind parting line grooves, the transparent conductive layer and the third kind parting line grooves, whereby those photoelectric conversion cells are electrically connected in series.
3. The integrated-type thin film photoelectric converter according to claim 2 , wherein
the laser light absorption layer includes a pn junction or a pin junction of a semiconductor,
the pn junction or the pin junction of the laser light absorption layer and a pin junction of the semiconductor photoelectric conversion layer are formed such that reverse type conductive layers are facing each other across the back electrode layer,
each of the parting line grooves is arrayed in parallel and in an order corresponding to the sixth kind parting line grooves, the third kind parting line grooves, the fourth kind parting line grooves, the first kind parting line grooves and the fifth kind parting line grooves,
a diode region connected with the transparent conductive layer, the laser light absorption layer and the back electrode layer is formed inside each photoelectric conversion cell region, and
the diode region and the photoelectric conversion region inside the same photoelectric conversion cell are connected so as to be electrically in parallel and to have reverse rectifying characteristics.
4. The integrated-type thin film photoelectric converter according to claim 2 , wherein
the fifth kind parting line grooves and the sixth kind parting line grooves are connected, and
the sixth kind parting line grooves have groove widths smaller than those of the fifth kind parting line grooves, and are formed inside the fifth kind parting line grooves.
5. The integrated-type thin film photoelectric converter according to claim 2 , wherein
the fifth kind parting line grooves and the sixth kind parting line grooves are connected, and
the fifth kind parting line grooves have groove widths smaller than those of the sixth kind parting line grooves and are formed inside the sixth kind parting line grooves.
6. The integrated-type thin film photoelectric converter according to claim 1 , further comprising grid metal electrode wires on the light receiving side transparent electrode layer, wherein
the fourth kind parting line grooves also penetrate the grid metal electrode wires.
7. A method for manufacturing an integrated-type thin film photoelectric converter for photoelectrically converting incident light from a light receiving side, the integrated-type thin film photoelectric converter comprising a transparent conductive layer, a laser light absorption layer, a back electrode layer, a semiconductor photoelectric conversion layer, and a light receiving side transparent electrode layer, sequentially slacked in this order on a transparent substrate, such that the light receiving side transparent electrode layer is positioned on the light receiving side of the photoelectric converter, wherein the transparent conductive layer, the laser light absorption layer, the back electrode layer, the semiconductor photoelectric conversion layer, and the light receiving side transparent electrode layer are parted into a plurality of strip photoelectric conversion cell regions electrically connected in series, the method comprising:
parting the laser light absorption layer into a plurality of strip regions by a plurality of first kind parting line grooves that penetrate only the laser light absorption laver and do not penetrate the back electrode layer:
parting the back electrode layer into a plurality of strip back electrode regions by a plurality of second kind parting line grooves, wherein the second kind parting line grooves are parallel to the first kind parting line grooves and penetrate the transparent conductive layer, the laser light absorption layer and the back electrode layer, and wherein the back electrode layer includes a light reflecting metal layer;
parting the semiconductor photoelectric conversion layer into a plurality of strip photoelectric conversion regions by a plurality of third kind parting line grooves, wherein the third kind parting line grooves are parallel to the first kind parting line grooves and penetrate the laser light absorption layer, the back electrode layer and the semiconductor photoelectric conversion layer;
parting the light receiving side transparent electrode layer into a plurality of strip light receiving side transparent electrode regions by a plurality of fourth kind parting line grooves, wherein the fourth kind parting line grooves are parallel to the first kind parting line grooves and penetrate the laser light absorption layer, the back electrode layer, the semiconductor photoelectric conversion layer and the light receiving side transparent electrode layer, and
between mutually adjacent photoelectric conversion cells, electrically connecting in series a back electrode region of one cell to a light receiving side transparent electrode region of another cell through the first kind parting line grooves, the transparent conductive layer and the third kind parting line grooves, wherein
all of the parting line grooves are formed by irradiation with laser beams from the transparent substrate side.
8. The method for manufacturing an integrated-type thin film photoelectric converter according to claim 7 , wherein
all of the parting line grooves are formed in a state where the transparent substrate is located above the transparent conductive layer in a vertical direction.
9. The method for manufacturing an integrated-type thin film photoelectric converter according to claim 7 , wherein
the second kind parting line grooves are formed by use of two kinds of laser beams which are different in at least either wavelength or power density.
10. The method for manufacturing an integrated-type thin film photoelectric converter according to claim 7 , wherein
the fifth kind parting line grooves are formed by use of a laser beam which is different from a laser beam for forming the sixth kind parting line grooves in at least either wavelength or power density.
11. The method for manufacturing an integrated-type thin film photoelectric converter according to claim 7 , wherein
parting line grooves not penetrating the transparent conductive layer are formed by use of a laser beam passing through the transparent conductive layer.
12. The method for manufacturing an integrated-type thin film photoelectric converter according to claim 11 , wherein
the laser light absorption layer comprises a silicon-based semiconductor, and the laser beam passing through the transparent conductive layer is a beam of a second harmonic of a YAG laser.
13. The method for manufacturing an integrated-type thin film photoelectric converter according to claim 7 , wherein
the parting line grooves penetrating the transparent conductive layer are formed by use of a laser beam being absorbed into the transparent conductive layer.
14. The method for manufacturing an integrated-type thin film photoelectric converter according to claim 13 , wherein
the transparent electrode layer comprises a transparent conductive oxide, and
the second kind parting line grooves are formed by use of a beam of a fundamental wave of a YAG laser.
15. The method for manufacturing an integrated-type thin film photoelectric converter, according to claim 7 , wherein
the parting line grooves penetrating the transparent conductive layer and the parting line grooves not penetrating the transparent conductive layer are formed by use of laser beams with the same wavelength, and
the laser beam for forming the parting line grooves penetrating the transparent conductive layer has a higher power density than the laser beam for forming the parting line grooves not penetrating the transparent conductive layer.
16. The integrated-type thin film photoelectric converter according to claim 2 , further comprising grid metal electrode wires on the light receiving side transparent electrode layer, wherein
the forth kind parting line grooves also penetrate the grid metal electrode wires.
17. A method for manufacturing an integrated-type thin film photoelectric converter for photoelectrically converting incident light from a light receiving side, the integrated-type thin film photoelectric converter comprising a transparent conductive layer, a laser light absorption layer, a back electrode layer, a semiconductor photoelectric conversion layer, and a light receiving side transparent electrode layer sequentially stacked in this order on a transparent substrate, such that the light receiving side transparent electrode layer is positioned on the light receiving side of the photoelectric converter, wherein the transparent conductive layer, the laser light absorption layer, the back electrode layer, the semiconductor photoelectric conversion layer, and the light receiving side transparent electrode layer are parted into a plurality of strip photoelectric conversion cell regions electrically connected in series, the method comprising:
parting the transparent conductive layer into a plurality of strip light receiving side transparent conductive regions by a plurality of fifth kind parting line grooves, wherein the fifth kind parting line grooves penetrate the transparent conductive layer;
parting the laser light absorption layer into a plurality of strip laser light absorption regions by a plurality of first kind parting line grooves, wherein the first kind parting line grooves are parallel to the fifth kind parting line grooves and penetrate only the laser light absorption layer and do not penetrate the back electrode laver;
parting the back electrode layer into a plurality of strip back electrode regions by a plurality of sixth kind parting line grooves, wherein the sixth kind parting line grooves are parallel to the first kind parting line grooves and penetrate the laser light absorption layer and the back electrode layer, and wherein the back electrode layer includes a light reflecting metal layer;
parting the semiconductor photoelectric conversion layer into a plurality of strip photoelectric conversion regions by a plurality of third kind parting line grooves, wherein the third kind parting line grooves are parallel to the first kind parting line grooves and penetrate the laser light absorption layer, the back electrode layer and the semiconductor photoelectric conversion layer;
parting the light receiving side transparent electrode layer into a plurality of strip light receiving side transparent electrode regions by a plurality of fourth kind parting line grooves, wherein the fourth kind parting line grooves are parallel to the first kind parting line grooves, and penetrate the laser light absorption layer, the back electrode layer, the semiconductor photoelectric conversion layer and the light receiving side transparent electrode layer, and
between two mutually adjacent photoelectric conversion cells, electrically connecting in series the back electrode region of one cell to the light receiving side transparent electrode region of another cell through the first kind parting line grooves, the transparent conductive layer and the third kind parting line grooves, wherein
all of the parting line grooves are formed by irradiation with laser beams from the transparent substrate side.
18. The method for manufacturing an integrated-type thin film photoelectric converter according to claim 17 , wherein
all of the parting line grooves are formed in a state where the transparent substrate is located above the transparent conductive layer in a vertical direction.
19. The method for manufacturing an integrated-type thin film photoelectric converter according to claim 17 , wherein
the second kind parting line grooves are formed by use of two kinds of laser beams which are different in at least either wavelength or power density.
20. The method for manufacturing an integrated-type thin film photoelectric converter according to claim 17 , wherein
the fifth kind parting line grooves are formed by use of a laser beam which is different from a laser beam for forming the sixth kind parting line grooves in at least either wavelength or power density.
21. The method for manufacturing an integrated-type thin film photoelectric converter according to claim 17 , wherein
parting line grooves not penetrating the transparent conductive layer are formed by use of a laser beam passing through the transparent conductive layer.
22. The method for manufacturing an integrated-type thin film photoelectric converter according to claim 21 , wherein
the laser light absorption layer comprises a silicon-based semiconductor, and
the laser beam passing through the transparent conductive layer is a beam of a second harmonic of a YAG laser.
23. The method for manufacturing an integrated-type thin film photoelectric converter according to claim 17 , wherein
the parting line grooves penetrating the transparent conductive layer are formed by use of a laser beam being absorbed into the transparent conductive layer.
24. The method for manufacturing an integrated-type thin film photoelectric converter according to claim 23 , wherein
the transparent electrode layer comprises a transparent conductive oxide, and
the second kind parting line grooves are formed by use of a beam of a fundamental wave of the YAG laser.
25. The method for manufacturing an integrated-type thin film photoelectric converter, according to claim 17 , wherein
the parting line grooves penetrating the transparent conductive layer and the parting line grooves not penetrating the transparent conductive layer are formed by use of laser beams with the same wavelength, and
the laser beam for forming the parting line grooves penetrating the transparent conductive layer has a higher power density than the laser beam for forming the parting line grooves not penetrating the transparent conductive layer.