Storage device and information rerecording method
View Patent ↗A storage device that improves ability of adjusting a resistance value level in recording and enables stable verification control is provided. VWL supplied from a second power source to a control terminal of a transistor is increased (increase portion: ΔVWL) for every rerecording by verification control by a WL adjustment circuit. In the case where a variable resistive element is able to record multiple values, ΔVWL is a value variable for every resistance value level of multiple value information. That is, ΔVWL is a value variable according to magnitude relation of a variation range of recording resistance of the variable resistive element due to a current. In the region where the variation range of the recording resistance is large (source-gate voltage VGS of the transistor is small), ΔVWL is small, while in the region where the variation range of the recording resistance is small (VGS is large), ΔVWL is large.
1. A storage device comprising:
a plurality of memory cells having a storage element which has a pair of electrodes and on which information is recorded by applying a voltage to the electrodes;
and a switching element that has a first input/output terminal, a second input/output terminal and a control terminal, in which the first input/output terminal is connected to one of the electrodes of the storage element;
a verification control means that checks whether or not information recording is correctly executed on the storage element, and performs rerecording according to a result thereof; and
an electric potential difference change means that increases electric potential difference between the control terminal and the second input/output terminal of the switching element more than that in precedent recording in the rerecording by the verification control means.
2. The storage device according to claim 1 , wherein the verification control means repeats a plurality of times of rerecording cycle, and
the electric potential difference change means varies an increase portion of the electric potential difference for every rerecording.
3. The storage device according to claim 1 , wherein the storage element is a nonvolatile variable resistive element in which a resistance value thereof is reversibly changed between high resistance state and low resistance state by applying voltages with different polarity between the electrodes.
4. The storage device according to claim 3 , wherein the storage element is able to record multiple value information, and
the electric potential difference change means varies the increase portion of the electric potential difference for every resistance value level of the multiple value information.
5. The storage device according to claim 4 , wherein the electric potential difference change means varies the increase portion of the electric potential difference according to magnitude relation of a variation range of the resistance value of the variable resistive element due to a current.
6. The storage device according to claim 5 , wherein in the electric potential difference change means, the increase portion of the electric potential difference is small in a region where the variation range of the resistance value of the variable resistive element due to the current is large, and the increase portion of the electric potential difference is large in a region where the variation range of the resistance value of the variable resistive element due to the current is small.
7. The storage device according to claim 1 , wherein the electric potential difference change means increases the electric potential difference by changing a voltage applied to the control terminal of the switching element.
8. The storage device according to claim 1 , wherein the electric potential difference change means increases the electric potential difference by changing a voltage applied to the second input/output terminal of the switching element.
9. The storage device according to claim 7 , wherein the switching element is an MOS transistor, and
the electric potential difference change means changes a gate-source voltage of the MOS transistor.
10. The storage device according to claim 2 , wherein the storage element further has a high resistive layer and an ion source layer being contacted with the high resistive layer and containing a metal element that is easily ionized, between the electrodes.
11. The storage device according to claim 2 , wherein the storage element has a high resistive layer between the electrodes, and a metal element that is easily ionized is contained in the high resistive layer.
12. The storage device according to claim 10 , wherein the metal element is at least one element selected from the group consisting of Cu, Ag, and Al.
13. The storage device according to claim 10 , wherein at least one element selected from the group consisting of S, Se, Te, and O is contained in a layer contacted with the high resistive layer or in the high resistive layer.
14. The storage device according to claim 10 , wherein when a first pulse voltage is applied between the electrodes, the ionized metal element is moved from the ion source layer into the high resistive layer, and thereby resistance of the storage element is decreased.
15. An information rerecording method comprising:
checking whether or not information recording is correctly executed on a storage element; and
performing rerecording according to a result thereof in a storage device,
the storage device including a plurality of memory cells having the storage element which has a pair of electrodes and on which information is recorded by applying a voltage to the electrodes and a switching element that has a first input/output terminal, a second input/output terminal and a control terminal, in which the first input/output terminal is connected to one of the electrodes of the storage element, wherein
electric potential difference between the control terminal and the second input/output terminal of the switching element is increased more than that in precedent recording in the rerecording.
16. The information rerecording method according to claim 15 , wherein the storage element is a nonvolatile variable resistive element in which a resistance value thereof is reversibly changed between high resistance state and low resistance state by applying pulse voltages with different polarity between the electrodes.
17. The information rerecording method according to claim 15 , further comprising repeating a rerecording cycle a plurality of times, and
an increase portion of the electric potential difference varies for every rerecording.
18. The information rerecording method according to claim 16 , wherein the storage element is able to record multiple value information, and
an increase portion of the electric potential difference varies for every resistance value level of the multiple value information.