IP Library Granted Patent US 7,932,121
Granted Patent B2
US 7,932,121 · App. 12/749,440 · Granted Apr 26, 2011

Semiconductor device and manufacturing method of the same

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Quick Facts
Patent No.
US 7,932,121
App. No.
12/749,440
Granted
Apr 26, 2011
Kind
B2
Abstract

A semiconductor device includes a semiconductor element, a transparent member separated from the semiconductor element by a designated length and facing the semiconductor element, a sealing member sealing an edge surface of the transparent member and an edge part of the semiconductor element, and a shock-absorbing member provided between the edge surface of the transparent member and the sealing member and easing a stress which the transparent member receives from the sealing member or the semiconductor element.

Claims (5)

1. A manufacturing method of a semiconductor device, the semiconductor device including a semiconductor element and a transparent member separated from the semiconductor element by a designated length and facing the semiconductor element, the manufacturing method comprising the steps of:

a) forming a piercing part in the transparent member adhered on an adhesive tape and forming a groove by cutting a part of the adhesive tape corresponding to the piercing part;

b) filling in the piercing part and the groove with a material of a shock-absorbing part configured to ease a stress in the transparent member, and curing the material of the shock-absorbing part;

c) cutting the material of the shock-absorbing part provided in the piercing part and the groove; and

d) peeling off the transparent member from the adhesive tape.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 27, 2015
From: FUJITSU SEMICONDUCTOR LIMITED
To: SOCIONEXT INC.
Reel/Frame 035508/0469 →
CHANGE OF NAME Recorded Sep 27, 2010
From: FUJITSU MICROELECTRONICS LIMITED
To: FUJITSU SEMICONDUCTOR LIMITED
Reel/Frame 025046/0478 →