PHOTOVOLTAIC NANOWIRE DEVICE

1 . A method of making a semiconductor nanowire photovoltaic device comprising:

(a) providing a plurality of spaced photovoltaic semiconductor nanowires on a growth substrate;

(b) applying dielectric material so that it is disposed between the semiconductor nanowires producing a layer of embedded semiconductor nanowires having a top surface opposed to a bottom surface, wherein the bottom surface is defined by the interface with the growth substrate;

(c) depositing a first electrode over the top surface of the layer of embedded semiconductor nanowires so that it is in electrical contact with the semiconductor nanowires;

(d) joining the first electrode to a device substrate;

(e) removing the growth substrate and exposing the bottom surface of the layer of embedded semiconductor nanowires;

(f) depositing a second electrode on the bottom surface of the layer of embedded semiconductor nanowires so that it is in electrical contact with the semiconductor nanowires; and

(g) wherein either the first or second electrode is transparent to permit light to be transmitted through the transparent electrode and be absorbed by the photovoltaic semiconductor nanowires.

2 . The method of claim 1 wherein the semiconductor nanowires include type II-VI, III-V, IV-VI or IV semiconductor materials.

3 . The method of claim 2 wherein the semiconductor nanowires include core/shell nanowires.

4 . The method of claim 2 wherein the semiconductor nanowires are pin diodes or p-n junctions.

5 . The method of claim 4 wherein the pin diodes or p-n junctions are axial or radial.

6 . The method of claim 1 wherein the dielectric material is a polymer dielectric.

7 . The method of claim 1 wherein step (c) is provided by vacuum depositing or sputtering the first electrode.

8 . The method of claim 1 wherein step (d) includes using a conductive connection material to form an electrical connection between the first metal and the device substrate.

9 . The method of claim 8 wherein the conductive connection material is a metal and step (d) is provided by:

(i) depositing the metallic conductive connection material on the device substrate;

(ii) melting the metallic conductive connection material; and

(iii) placing the first electrode in contact with the metallic conductive connection material to join the first electrode to the device substrate.

10 . The method of claim 1 wherein the device substrate is flexible.

11 . The method of claim 1 wherein the device substrate is conductive.

12 . The method of claim 1 wherein step (e) includes providing energy to weaken the bond between the semiconductor nanowires and the growth substrate to facilitate the removal of the semiconductor nanowires.

13 . An integrated photovoltaic nanowire device comprising:

(a) a plurality of spaced photovoltaic semiconductor nanowires each having top and bottom surfaces;

(b) dielectric material disposed between the spaced semiconductor nanowires;

(c) a first electrode in direct contact with the top surface of the nanowires;

(d) a conductive connection layer in contact with the first electrode;

(e) a second electrode in direct contact with the bottom surface of the nanowires;

(f) a device substrate in contact with the conductive connection layer; and

(g) either the first or second electrode is transparent to permit light to be transmitted through the transparent electrode and be absorbed by the photovoltaic semiconductor nanowires.

14 . The photovoltaic nanowire device of claim 13 wherein the photovoltaic semiconductor nanowires include type II-VI, III-V, IV-VI or IV semiconductor materials.

15 . The photovoltaic nanowire device of claim 14 where each nanowire is a semiconductor pin diode or p-n junction.

16 . The photovoltaic nanowire device of claim 15 wherein the pin diodes or p-n junctions are axial or radial.

17 . The photovoltaic nanowire device of claim 13 where the conductive connection layer is a metal