Leakage pathway layer for solar cell
View Patent ↗Leakage pathway layers for solar cells and methods of forming leakage pathway layers for solar cells are described.
1. A solar cell, comprising:
a dielectric layer disposed above an N-type silicon substrate;
a leakage pathway layer disposed above the dielectric layer, the leakage pathway layer comprising a layer of N-type silicon having a thickness less than 10 nanometers; and
an anti-reflective coating layer disposed above the leakage pathway layer.
2. The solar cell of claim 1 , wherein the layer of N-type silicon has a thickness of approximately 5 nanometers.
3. The solar cell of claim 1 , wherein the solar cell is a back-contact solar cell, and the dielectric layer is disposed on a light-receiving surface of the substrate.
4. The solar cell of claim 1 , wherein the dielectric layer is disposed directly on the substrate, wherein the leakage pathway layer is disposed directly on the dielectric layer, and wherein the anti-reflective coating layer is disposed directly on the leakage pathway layer.
5. The solar cell of claim 1 , wherein the dielectric layer has a thickness approximately in the range of 35-45 Angstroms.
6. The solar cell of claim 1 , wherein the anti-reflective coating layer has a thickness approximately in the range of 70-80 nanometers.
7. The solar cell of claim 1 , wherein the dielectric layer is for enabling an electric field effect on a solar-receiving surface of the solar cell, the electric field effect comprising a band bending into the substrate.
8. The solar cell of claim 1 , wherein the dielectric layer is a silicon dioxide dielectric layer.
9. The solar cell of claim 1 , wherein the layer of N-type silicon is a layer of phosphorus-doped silicon.
10. The solar cell of claim 1 , wherein the layer of N-type silicon has a morphology selected from the group consisting of amorphous, nano-crystalline, and fine-grained.
11. The solar cell of claim 1 , wherein the layer of N-type silicon has a morphology selected from the group consisting of nano-crystalline and fine-grained.
12. A solar cell, comprising:
a silicon dioxide dielectric layer disposed on an N-type silicon substrate;
a leakage pathway layer disposed on the silicon dioxide dielectric layer, the leakage pathway layer comprising a layer of phosphorus-doped silicon with a morphology selected from the group consisting of amorphous, nano-crystalline, and fine-grained, wherein the layer of phosphorus-doped silicon has a thickness less than 10 nanometers; and
an anti-reflective coating layer disposed on the leakage pathway layer.
13. The solar cell of claim 12 , wherein the layer of phosphorus-doped silicon has a thickness of approximately 5 nanometers.
14. The solar cell of claim 12 , wherein the solar cell is a back-contact solar cell, and the silicon dioxide dielectric layer is disposed on a light-receiving surface of the substrate.
15. The solar cell of claim 12 , wherein the silicon dioxide dielectric layer has a thickness approximately in the range of 35-45 Angstroms.
16. The solar cell of claim 12 , wherein the anti-reflective coating layer has a thickness approximately in the range of 70-80 nanometers.
17. The solar cell of claim 12 , wherein the silicon dioxide dielectric layer is for enabling an electric field effect on a solar-receiving surface of the solar cell, the electric field effect comprising a band bending into the substrate.
18. The solar cell of claim 12 , wherein the layer of phosphorus-doped silicon has a morphology selected from the group consisting of nano-crystalline and fine-grained.